The origin for the formation of Al–N clusters in the Ga-rich dilute nitride Al x Ga 1 − x N y X 1 − y (X = As, or P) alloys

Zhao, Chuan‐Zhen; Wei, Tong; Li, Nana; Wang, Shasha; Lu, Keqing

doi:10.1016/j.spmi.2014.07.037

Cited by 69 publications

(104 citation statements)

References 33 publications

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“…31, 32 and 33 Furthermore, in cultured podocytes, PPAR-α agonists reduce apoptosis and increase nephrin expression. 31,34 It is thus tempting to speculate that the increase in OEA levels may represent a protective mechanism compensating for the deleterious effects of both CB2 deletion and enhanced CB1 signaling.…”

Section: The Observation That Cb2mentioning

confidence: 99%

Deficiency of cannabinoid receptor of type 2 worsens renal functional and structural abnormalities in streptozotocin-induced diabetic mice

Barutta

Grimaldi

Franco

et al. 2014

Kidney International

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A functionally active endocannabinoid system is present within the kidney. The cannabinoid receptor type 2 (CB2) is expressed by both inflammatory cells and podocytes, and its activation has beneficial effects in experimental diabetic nephropathy. To further explore the role of CB2 in diabetic nephropathy, we studied renal functional and structural abnormalities in streptozotocin-induced diabetic CB2 knockout mice. In diabetic mice, deletion of the CB2 receptor albuminuria, the downregulation of podocin and nephrin, mesangial expansion, overexpression of extracellular matrix components, monocyte infiltration, and reduced renal function were all exacerbated. To investigate the relative contributions of podocytes and monocytes to the phenotype of diabetic knockout mice, bone marrow transplantation experiments were performed. The lack of CB2 on bone marrow-derived cells was shown to be important in driving the enhanced glomerular monocyte accrual found in diabetic knockout mice. Absence of CB2 on resident glomerular cells had a major role in worsening diabetic nephropathy, both functional and structural abnormalities, likely by enhanced MCP-1 and CB1 signaling. Studies in cultured podocytes demonstrated that CB2 expression is not altered by a high glucose milieu but is downregulated by mechanical stretch, mimicking glomerular capillary hypertension. Thus, CB2 deletion worsens diabetic nephropathy, independent of bone marrow-derived cells.Diabetic nephropathy (DN) is characterized by increased glomerular permeability to proteins and excessive extracellular matrix (ECM) deposition in the mesangium.1 Both hyperglycemia and hypertension are key determinants in the development of DN.2 In addition, increasing evidence suggests that a low-grade inflammatory response also has a role in disease etiology. In particular, the potent chemokine monocyte chemoattractant protein 1 (MCP-1) is an important mediator of both functional and structural abnormalities of the diabetic kidney. 3 The slit diaphragm, a junction connecting foot processes (FP) of neighboring podocytes, represents the major restriction site to protein filtration. 4 In human DN, there is a downregulation of the slit diaphragm proteins, nephrin, and podocin, and diabetes-related insults, such as advanced glycated products, MCP-1, and mechanical stretch, which mimics glomerular capillary hypertension, downregulate nephrin in cultured podocytes. 5, 6 and 7 Endocannabinoids (EC), anandamide (AEA) and 2-arachidonoylglycerol (2-AG), bind to two G-proteincoupled seven transmembrane cannabinoid receptors named CB1 and CB2. In experimental diabetes, the CB1 is overexpressed by podocytes, and CB1 blockade ameliorates albuminuria and nephrin loss. 8 The CB2 is mainly expressed by cells of hematopoietic origin including monocytes-macrophages, 9 and CB2 activation is protective in animal models of chronic inflammatory diseases, such as atherosclerosis 10 and liver fibrosis, 11 whereas CB2 deletion exacerbates tissue damage by enhancing inflammatory, oxidative, and fibrotic...

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Section: The Observation That Cb2mentioning

confidence: 99%

Deficiency of cannabinoid receptor of type 2 worsens renal functional and structural abnormalities in streptozotocin-induced diabetic mice

Barutta

Grimaldi

Franco

et al. 2014

Kidney International

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“…steep SS Sibased TFET devices have already been demonstrated [1-3], however, the drive current requirement has brought III-V materials with higher tunneling efficiency than Si under attention [4][5][6][7][8][9][10][11][12][13][14]. Based on the work in [4], we have fabricated InGaAs TFETs with the source formed by Zn diffusion which was shown to significantly reduce the defect density at the tunnel junction.…”

mentioning

confidence: 99%

Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET

Alian

Franco

Vandooren

et al. 2015

2015 IEEE International Electron Devices Meeting (IEDM)

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InGaAs planar TFETs with 70% In content are fabricated and characterized. The increase of the In content of the 8 nm channel from 53% to 70% is found to significantly boost the performance of the device. Record performance I on =4 μA/μm at I off = 100 pA/μm, V dd =0.5V and V d =0.3 V with minimum sub-threshold swing (SS min ) of 60 mV/dec at 300K is obtained for a homo-junction InGaAs device. Reliability assessment shows that the TFET SS and transconductance (g m ) are more immune to PBTI stress than its equivalent MOSFET device.Introduction: TFET devices are gaining increasingly higher interest due to their potential to deliver steeper than 60 mV/dec SS at room temperature. steep SS Sibased TFET devices have already been demonstrated [1-3], however, the drive current requirement has brought III-V materials with higher tunneling efficiency than Si under attention [4][5][6][7][8][9][10][11][12][13][14]. Based on the work in [4], we have fabricated InGaAs TFETs with the source formed by Zn diffusion which was shown to significantly reduce the defect density at the tunnel junction. We have further extended the study to TFETs with 70% channel In content in combination with an optimized gate stack process. The PBTI reliability [15,16,17] of the devices is studied and compared to an In 0.53 Ga 0.47 As MOSFET device counterpart.

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“…The detailed preparation process is given in our previous work. [32][33][34] Two kinds of coatings with thicknesses of about 100 and 400 lm were prepared. Figure 1 shows the dimensions of the specimens.…”

Section: Methodsmentioning

confidence: 99%

Fracture Characteristics and Damage Evolution of Coating Systems Under Four‐Point Bending

Liu

Liang

Wang

et al. 2016

Int J Applied Ceramic Tech

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The fracture and damage behaviors of ceramic coating/alloy substrate systems under four-point bending were investigated using a scanning electron microscope to observe in situ tests. Both the thin and thick coatings fractured by tensile instability at the pure bending sections, and multiple transverse cracks that were vertical to the interface occurred in the coatings. The average crack spacing was greater for the thick coatings than for the thin ones. A catastrophic failure model was developed to explain the damage evolution behavior of the coatings. The damage was found to increase sharply near the failure point.

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The origin for the formation of Al–N clusters in the Ga-rich dilute nitride Al x Ga 1 − x N y X 1 − y (X = As, or P) alloys

Cited by 69 publications

References 33 publications

Deficiency of cannabinoid receptor of type 2 worsens renal functional and structural abnormalities in streptozotocin-induced diabetic mice

Deficiency of cannabinoid receptor of type 2 worsens renal functional and structural abnormalities in streptozotocin-induced diabetic mice

Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET

Fracture Characteristics and Damage Evolution of Coating Systems Under Four‐Point Bending

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