The organometallic vpe growth of GaSb and GaAsl−xSbx using trimethylantimony

Cooper, Christopher B.; Saxena, R. R.; Ludowise, M. J.

doi:10.1007/bf02658912

Cited by 75 publications

(16 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…GaAsSbN also exhibits a small reduction in hole mobility as compared to GaAsSb. Cooper et al [17] and Bedair et al [13] reported mobilities near 500 cm 2 /V-s for GaAs 0.8 Sb 0.2 on GaAs with net carrier concentrations in the mid-10 16 /cm 3 . The mobility of nearly lattice matched GaAs 0.94 Sb 0.05 N 0.01 at 300 K was measured to be 350 cm 2 /V-s with 1.0E17/cm 3 background hole concentrations and the mobility at 77 K was 1220 cm 2 /V-s with a background hole concentration of 4.8E16/cm 3 .…”

Section: 4-34 â Greater Than That Of the Gaassbmentioning

confidence: 97%

OMVPE of GaAsSbN for long wavelength emission on GaAs

Peake

Waldrip

Hargett

et al. 2004

Journal of Crystal Growth

View full text Add to dashboard Cite

Section: 4-34 â Greater Than That Of the Gaassbmentioning

confidence: 97%

OMVPE of GaAsSbN for long wavelength emission on GaAs

Peake

Waldrip

Hargett

et al. 2004

Journal of Crystal Growth

View full text Add to dashboard Cite

“…The few studies available on MOVPE growth of GaAsSb on GaAs indicate that a rather low arsine partial pressure is needed to achieve at least a small Sb incorporation [3][4][5][6][7][8]. Bedair et al [5] especially noted that the arsine partial pressure was the crucial parameter, rather than the TMSb partial pressure.…”

Section: Resultsmentioning

confidence: 97%

“…The ternary GaAs 0:53 Sb 0:47 is lattice matched to InP 11.420 and mostly used for solar cell or hetero-bipolar transistor applications. For the growth of strained GaAsSb layers on GaAs the need for low V/III ratios to achieve reasonable Sb incorporation was already emphasised in previous works [3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 96%

Growth of strained GaAsSb layers on GaAs (001) by MOVPE

Pristovsek

Zorn

Zeimer

et al. 2005

Journal of Crystal Growth

View full text Add to dashboard Cite

“…Because of the low equilibrium vapor pressure, excess Sb does not evaporate. Above a critical V/III ratio, an Sb-rich second phase was observed for GaSb growth [6,[11][12][13]. On the other hand, Ga droplets formed below a critical V/III ratio.…”

Section: Fundamental Differences Between Sb-based and P-or As-based Imentioning

confidence: 99%

Progress and continuing challenges in GaSb-based III–V alloys and heterostructures grown by organometallic vapor-phase epitaxy

Wang

2004

Journal of Crystal Growth

View full text Add to dashboard Cite

This paper discusses progress in the preparation of mid-IR GaSb-based III-V materials grown by organometallic vapor phase epitaxy (OMVPE). The growth of these materials is complex, and fundamental and practical issues associated with their growth are outlined. Approaches that have been explored to further improve the properties and performance are briefly reviewed.Recent materials and device results on GaInAsSb bulk layers and GaInAsSb/AlGaAsSb heterostructures, grown lattice matched to GaSb, are presented. State-of-the-art GaInAsSb materials and thermophotovoltaic devices have been achieved. This progress establishes the high potential of OMVPE for mid-IR GaSb-based devices. 2 IntroductionGaSb-based III-V semiconductor alloys are attractive for optoelectronic devices such as midinfrared lasers, detectors, and thermophotovoltaics (TPVs); and electronic devices such as highspeed transistors and resonant-tunneling diodes [1]. Alloys of particular interest are based on the binaries GaSb, AlSb, InSb, GaAs, AlAs, and InAs. As shown in Fig. 1 GaSb-based heterostructures have been successfully grown by all of the major epitaxial techniques, including liquid phase epitaxy, molecular beam epitaxy (MBE), and organometallic vapor phase epitaxy (OMVPE). While each of these technologies must contend with numerous challenges that are specific to the method of choice, several fundamental issues related to Sbcontaining III-V alloys exist. These include the low volatility of Sb compared to P-and Asbased alloys, which necessitates stringent control of V/III ratio; the requirement to use low growth temperatures (450 to 600 °C); the existence of a large solid phase miscibility gap for many Sb-containing alloys; and the affinity of AlSb-based alloys to incorporate O and C. As a consequence, growth of Sb-based alloys differs significantly from the more conventional As-and P-based materials, which certainly has made the development of the GaSb-based materials and devices very challenging.This paper discusses both the fundamental and practical issues associated with the growth of mid-IR GaSb-based III-V alloys grown by OMVPE, and briefly reviews approaches that have been explored to further improve the properties and performance of bulk layers as well as heterostructures. Growth considerations include the importance of suitable organometallic precursors and control of V/III ratio; miscibility gaps in ternary and quaternary alloys; C and O contamination in AlSb-based alloys; in-situ monitoring; GaSb substrate quality and preparation;and heterostructure growth. Recent materials and device results are limited to GaInAsSb and 3 AlGaAsSb alloys grown lattice matched to GaSb, since two comprehensive reviews on OMVPE growth of Sb-based materials were recently published [5,6]. Growth considerations and brief review of previous work Fundamental differences between Sb-based and P-or As-based III-V alloysOne of the early premises of OMVPE growth of III-V semiconductors was the utilization of precursors based on group III organometallics a...

show abstract

The organometallic vpe growth of GaSb and GaAsl−xSbx using trimethylantimony

Cited by 75 publications

References 9 publications

OMVPE of GaAsSbN for long wavelength emission on GaAs

OMVPE of GaAsSbN for long wavelength emission on GaAs

Growth of strained GaAsSb layers on GaAs (001) by MOVPE

Progress and continuing challenges in GaSb-based III–V alloys and heterostructures grown by organometallic vapor-phase epitaxy

Contact Info

Product

Resources

About