OMVPE of GaAsSbN for long wavelength emission on GaAs

Effects of Gas switching sequences on GaAs/GaAs1−ySby superlattices

“…These reports do not present chemical or structural data which would could be used to directly determine the composition of the alloy layer but rather generally rely on the use of quantum well PL data for structure verification [25][26][27][28]. If the conditions in those studies for the pseudomorphic growth of GaAs 1Ày Sb y layers were extrapolated from thick layer growth studies, similar discrepancies in the alloy composition between the projected and realized alloy composition, observed in the present study, would exist.…”

MBE growth and properties of GaAsSbN/GaAs single quantum wells

“…The nitride material systems lattice matched to GaAs that can operate in the 1.3-1.55 mm range for laser-based radar and optical communication applications are InGaAsN [2][3][4][5], GaAsSbN [6][7][8] and InGaAsSbN [5,9,10]. Amongst these InGaAsN has been the most extensively studied system.…”

“…These observations suggest that the growth parameters and procedure play an important role in the incorporation of Sb and N and the quality of the interface. N incorporation was found to increase with growth temperature in OMVPE-grown GaAsSbN QWs [8]. Hitherto, such growth studies in MBE-grown GaAsSbN layers have not been carried and they are important to achieve layers of good crystal quality for increasing the wavelength region of interest.…”

Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP

“…The 650 1C anneal resulted in a seven-fold increase in the PL intensity, a reduced full-width at half-maximum and a small shift to lower emission wavelength [14]. The quite small (3.55 meV) blue shift contrasts starkly with the 55-120 eV shifts observed upon annealing of multiple QWs with the same active layer, but GaAs barrier layers and substrate [9,16]. The 600 1C anneal resulted in a PL spectrum intermediate to the as-grown and 650 1C anneal.…”

“…Emission wavelengths of 41.3 mm also have been realized in structures comprised of nearly lattice matched GaAsSbN and GaAs (Da/ao0.1%) with similar concentrations of incorporated nitrogen as in the InGaAsN alloys [8,9]. Emission at 1.35 and 1.5 mm was achieved for annealed single-layer quantum wells (QWs) with active layers of composition GaAs 0.74 Sb 0.25 N 0.01 and GaAs 0.825 Sb 0.15 N 0.025 , respectively [8].…”