The optical properties of CuInSe2 thin films

Hörig, W.; Neumann, H.; Sobotta, H.; Schümann, B.; Kühn, G.

doi:10.1016/0040-6090(78)90332-2

Cited by 170 publications

(34 citation statements)

References 19 publications

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“…7), the corresponding gap energies were found to be Εgf = (1.03 ± 0.03) and Egi = 0.85 eV, respectively. Thus our results confirm the conclusion of Parkes [6] and W. Hörig et al [18] that the absorption behaviour immediately above the fundamental edge is more complicated and can be described by the existence of two optical transitions, one of them being an indirect transition with a characteristic energy below the direct gap energy.…”

Section: Resultssupporting

confidence: 92%

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The Optical Properties of CuInSe₂Thin Films

Fouad

Youssef

1992

Acta Phys. Pol. A

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The optical constants of vacuum deposited CuInSe2 thin films of different thicknesses (60-135 nm) were determined in the photon energy from 1.03 to 3.1 eV. It was found that both the refractive index n and the absorption index k are independent of the frlm thickness. The analysis of the experimental points of the refractive index revealed the existence of normal dispersion and fits Sellmeier dispersion formula for single oscillator model. Using the previous model the optical dielectric constant as well as the oscillator energy and dispersion parameter have been calculated. CuInSe 2 is found to be a direct gap semiconductor with a gap energy of 1.03 eV. At energies well above the absorption edge, the absorption behaviour can be explained by the existence of a forbidden direct transition with the same direct energy gap and an indirect one with energy gap of 0.85 eV.

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Section: Resultssupporting

confidence: 92%

“…6). The value of Eg is in good agreement with the earliest published data [18,19]. However, if we calculated αd, where αd is the value of α for direct transition obtained from the •relation (α hv) 2 as a function of hv for energies above 1.15 eV and plot it as a function of λ (dashed line in Fig.…”

Section: Resultssupporting

confidence: 87%

The Optical Properties of CuInSe₂Thin Films

Fouad

Youssef

1992

Acta Phys. Pol. A

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“…Under the assumption that " $ 10 4 cm -1 for photon energies slightly above E g (as reported for CuInSe 2 [15]) the information depth of the optical reflection measurement is $ 2000 nm, which is in the range of the thickness of the investigated CIG(S)Se layers (note that we define the information depth to be the thickness from which 90% of the overall signal is 5 collected, and that all of our spectroscopies are governed by an exponential attenuation function). This explains the good agreement between the E g values estimated from the optical reflection and the bulk composition, since both probe the entire CIG(S)Se volume.…”

mentioning

confidence: 99%

Depth-resolved band gap in Cu(In,Ga)(S,Se)2 thin films

Bär

Nishiwaki

Weinhardt

et al. 2008

Applied Physics Letters

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The surface composition of Cu(In,Ga)(S,Se) 2 ("CIGSSe") thin films intrinsically deviates from the corresponding bulk composition, which also modifies the electronic structure and thus the optical properties. We have used a combination of photon and electron spectroscopies with different information depths to gain depth-resolved information on the band gap energy (E g ) in CIG(S)Se thin films. We find an increasing E g with decreasing information depth, indicating the formation of a surface region with significantly higher E g . This E g -widened surface region extends further into the bulk of the sulfur-free CIGSe thin film compared to the CIGSSe thin film.

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“…Under the assumption that α ≈ 10 4 cm -1 for photon energies slightly above E g (as reported for CuInSe 2 [16]) the information depth of the optical reflection measurement is ≈ 2000 nm, which is in the range of the thickness of the investigated CIGSe (CIGSSe) layers (note that for this and the following considerations the information depth is defined as the thickness from which 90% of the overall signal is collected). XAS (in total fluorescence yield mode) and XES have similar information depths ( ≈ 200 nm) (based on [9]).…”

Section: Fig 19 Schematic Presentation Of the Determined Band Gap Enmentioning

confidence: 94%

Characterization of the Electronic and Chemical Structure at the Thin Film Solar Cell Interfaces: June 2005 -- June 2009

Heske¹

2009

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The optical properties of CuInSe2 thin films

Cited by 170 publications

References 19 publications

The Optical Properties of CuInSe₂Thin Films

The Optical Properties of CuInSe₂Thin Films

Depth-resolved band gap in Cu(In,Ga)(S,Se)2 thin films

Characterization of the Electronic and Chemical Structure at the Thin Film Solar Cell Interfaces: June 2005 -- June 2009

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The optical properties of CuInSe2 thin films

Cited by 170 publications

References 19 publications