The Oppositely Doped Islands IGBT Achieving Ultralow Turn Off Loss

Chen, Weizhen; Cheng, Junji; Huang, Haimeng; Zhang, Bingke; Chen, Xing Bi

doi:10.1109/ted.2019.2924093

Cited by 18 publications

(8 citation statements)

References 14 publications

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“…Recently, in 2019 various techniques have been put forth to improve turn-off losses [10][11][12][13][14]. Partial carrier stored hole path structure has been suggested in order to improve turn-off loss and on-state voltage drop by 11.1% and 2.2%, respectively [12].…”

Section: Introductionmentioning

confidence: 99%

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Trench IGBT with stepped doped collector for low energy loss

Vaidya

Naugarhiya

Verma

2020

Semicond. Sci. Technol.

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In this paper, a novel technique of variation doping profile in collector region for trench IGBT is proposed. The collector region is segregated in three sections such that the section with higher concentration lies towards emitter side while section with lower concentration lie towards gate side. The presence of lightly doped collector section increases the recombination rate by injecting lesser charge carrier leading to reduction in carrier lifetime. This effect further improves turn-off process for proposed device. However, due to increased recombination rate, collector current density reduces. But, this reduction is counter balanced by heavily doped collector section which injects higher charge carriers and maintains current flow through proposed device. The electrical characteristics of proposed and conventional device is simulated and analyzed. It is inferred that proposed device exhibits 48% reduction in turn-off time further minimizing energy loss by 53.3%. The lower doping profile of collector region also reduces corner electric field but due to p ++ -col section the net electric field increases hence, improving the breakdown voltage by 8.7%. Additionally, proposed structure exhibits 16.7% increment in Baliga figure of merit as compared to conventional design.

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Section: Introductionmentioning

confidence: 99%

“…This technique increases quasi-Fermi level of holes present in Ppillar thereby reducing V on . The impact of oppositely doped islands have been investigated by including equidistance low doping p-islands region inside the n-drift [13]. This technique achieves E off which is 52% as that of FS-IGBT at same breakdown and on-state voltage.…”

Section: Introductionmentioning

confidence: 99%

Trench IGBT with stepped doped collector for low energy loss

Vaidya

Naugarhiya

Verma

2020

Semicond. Sci. Technol.

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“…However, the SJ-IGBT typically relies on a complicated fabrication process. Based on the simplification of the process, the semi-SJ-IGBT [4], the "anode side"-SJ-IGBT [5], the dual implant RC-SJ-IGBT [6], and the IGBT with oppositely doped islands [7] have been investigated. People also have tried to fabricate the SJ-IGBT using the deep trench Manuscript received; revised; accepted.…”

Section: Introductionmentioning

confidence: 99%

Study on the IGBT Using a Deep Trench Filled With SiO₂ and High-k Dielectric Film

Chen

Cheng

2020

IEEE J. Electron Devices Soc.

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A novel insulated gate bipolar transistor (IGBT) using a deep trench filled with SiO2 and high-k dielectric film (HKF) is presented. The deep trench with the HKF can provide rapid depletion of the drift region during the turn-off transient, eliminating the tail current and reducing the turn-off loss. According to the simulation results, with a relative permittivity of 475 and a 400 nm thickness for the HKF, the proposed device obtains a 62% reduction in the turn-off loss compared to a conventional field stop IGBT at the same on-state voltage and breakdown voltage. Moreover, compared to an IGBT using a trench filled with HK dielectric, the proposed device is more feasible to be fabricated and has a lower gate-to-anode capacitance, which can reduce the current and voltage oscillations during the turn-off transient.

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“…However, to improve the trade-off between E off and V on with increment in breakdown voltage, few drift engineering techniques have also been applied in IGBT. [10][11][12][13][14] The controllable trench gate (CTG) at the collector side is implemented to control the minority carrier injection with the nature of applied potential difference between CTG and collector terminal. This technique reduces the E off and V on by 34% and 74%, respectively.…”

mentioning

confidence: 99%

“…The reduction in energy loss by ODI-IGBT has been offered 52% of field stop (FS) IGBT with maintaining same BV and V on . 11 The lateral variation doping profile in the drift region facilitates the Darlington's pair in the drift region to provide the conductivity modulation, which leads to reduce the V on . On the other hand, p-col section at the collector side provides the fast discharging path and offers 33% reduction in the E off .…”

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confidence: 99%

1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching Application

Vaidya¹,

Naugarhiya²,

Verma³

et al. 2022

ECS J. Solid State Sci. Technol.

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A gate engineering technique was used in an insulated gate bipolar transistor (IGBT) for fast switching applications. The modification consists of stepped oxide pattern at gate terminal with n-poly layer sandwiched between two p-poly layers. The oxide thickness increases from top to bottom to create a stepped structure. The oxide is thinner on the channel side and thicker on the collector side. The thinner oxide on the channel side increases gate to emitter charges (QGE) by extracting extra charges along the channel. The presence of these extra charges also increases the collector current density resulting in a reduction in the area specific on-resistance (Ron.A). Furthermore, to elongate the impact of QGC reduction, the low doped p-col region has been facilitated which also play an important role to increase the breakdown voltage by reducing corner electric field. This p-col region creates a charge extraction path to sweep out charges from the drift region during a turn-off event, leading to rapid turn-off. The collective improvement in QGE and QGC provides fast switching to the proposed device by improving turn-off time by 63% and reduces turn-off loss (Eoff) by 55% as compared to the conventional device

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The Oppositely Doped Islands IGBT Achieving Ultralow Turn Off Loss

Cited by 18 publications

References 14 publications

Trench IGBT with stepped doped collector for low energy loss

Trench IGBT with stepped doped collector for low energy loss

Study on the IGBT Using a Deep Trench Filled With SiO₂ and High-k Dielectric Film

1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching Application

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The Oppositely Doped Islands IGBT Achieving Ultralow Turn Off Loss

Cited by 18 publications

References 14 publications

Trench IGBT with stepped doped collector for low energy loss

Trench IGBT with stepped doped collector for low energy loss

Study on the IGBT Using a Deep Trench Filled With SiO2 and High-k Dielectric Film

1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching Application

Contact Info

Product

Resources

About

Study on the IGBT Using a Deep Trench Filled With SiO₂ and High-k Dielectric Film