The opportunities, successes and challenges for GaInNAsSb

Harris, James S.

doi:10.1016/j.jcrysgro.2004.12.050

Cited by 55 publications

(42 citation statements)

References 25 publications

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“…Extending the wavelength of operation to 1.55 m in this alloy system dictates N and In concentrations exceeding 2% and 35%, respectively, resulting in considerable degradation of the structural and optical properties. [1][2][3][4][5] However, addition of Sb to this system allowed enhanced In incorporation resulting in redshifting the wavelength further to 1.55 m with improved material quality. [1][2][3][4][5] Vertical cavity surface emitting lasers ͑VCSEL͒ have been successfully demonstrated at 1.45 m using this quinary system.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5] Vertical cavity surface emitting lasers ͑VCSEL͒ have been successfully demonstrated at 1.45 m using this quinary system. 5 However, the presence of an additional component makes the system more complex.…”

Section: Introductionmentioning

confidence: 99%

“…The low temperature photoluminescence ͑PL͒ characteristics in this system are reported [7][8][9][10][11][12] to be dominated by localized excitons due to the N induced localized states and potential fluctuations. Different annealing techniques have been improvised by various groups [1][2][3][4][5][6][7][8][9][10][11][12][13] for the annihilation of N related states to improve the PL efficiency. Our recent work 9,13 indicates that in situ annealing in an As ambient is more effective in the reduction of the density of localized states and nonradiative recombination centers that are responsible for PL thermal quenching.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Nitrogen incorporation and optical studies of GaAsSbN∕GaAs single quantum well heterostructures

Nunna¹,

Iyer²,

Wu³

et al. 2007

Journal of Applied Physics

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In this work, the effects of N incorporation on the optical properties of GaAsSbN / GaAs single quantum wells ͑SQWs͒ have been investigated using temperature, excitation, and magnetic dependencies of photoluminescence ͑PL͒ characteristics. These layers were grown in an elemental solid source molecular beam epitaxy system with a rf plasma N source. The N concentrations in the range of 0.5%-2.5% were investigated in this study. The SQW with N ϳ 0.5% exhibits a behavior similar to that in an intermediate regime where the contributions from the localized states in the band gap are dominant. The temperature and excitation dependencies of the PL characteristics indicate that for the N concentration of 0.9% and above, the alloy behavior is analogous to that of a regular alloy and the changes in optical properties are only marginal. The conduction band effective mass ͑m eff ͒ values computed from the magnetophotoluminescence spectra using a variational formalism and the band anticrossing model are in good agreement and indicate enhanced values of m eff . However, there is no significant variation in m eff values of QWs for N ജ 0.9%. Small redshift of about 30-50 meV for the temperature variations from 10 to 300 K in conjunction with unusually small blueshift observed in the excitation dependence of PL for N ജ 0.9% indicate that this system holds a great promise for laser applications at 1.55 m and beyond.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Nitrogen incorporation and optical studies of GaAsSbN∕GaAs single quantum well heterostructures

Nunna¹,

Iyer²,

Wu³

et al. 2007

Journal of Applied Physics

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“…We have recently started atomic and electronic structural studies on the quinary GaInAsNX/GaAs material system (X is some appropriate impurity additive), which for X=Sb, has recently been demonstrated to be among the best candidates for semiconductor lasers operating at wavelengths longer than 1.3 µm [41,42].…”

Section: Discussionmentioning

confidence: 99%

Band offset determination of the GaAs/GaAsN interface using the density functional theory method

Komsa¹,

Arola²,

Larkins³

et al. 2008

J. Phys.: Condens. Matter

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Abstract. The GaAs/GaAsN interface band offset is calculated from first principles. The electrostatic potential at the core regions of the atoms is used to estimate the interface potential and align the band structures obtained from respective bulk calculations. First, it is shown that the present method performs well on the wellknown conventional/conventional AlAs/GaAs (001) superlattice system. Then the method is applied to a more challenging nonconventional/conventional GaAsN/GaAs (001) system, and consequently type I band lineup and valence-band offset of about 35 meV is obtained for nitrogen concentration of about 3 %, in agreement with the recent experiments. We also investigate the effect of strain on the band lineup. For the GaAsN layer longitudinally strained to the GaAs lattice constant, the type II lineup with a nearly vanishing band offset is found, suggesting that the anisotropic strain along the interface is the principal cause for the often observed type I lineup.

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“…InGaAsN / GaAs has been the most extensively studied system; however, the operating wavelength of 1.55 m necessitates N and In concentrations exceeding 2% and 35%, respectively, leading to considerable degradation of the structural and optical properties. [1][2][3][4] More recently InGaAsN͑Sb͒ / GaAs system has been demonstrated to be successful in this wavelength range 2,3,5 but five components make the system more complex. The work on GaAsSbN / GaAs system has been somewhat limited.…”

Section: Introductionmentioning

confidence: 99%

Optical studies of molecular beam epitaxy grown GaAsSbN∕GaAs single quantum well structures

Nunna

Iyer

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In this work, the authors present a systematic study on the variation of the structural and the optical properties of GaAsSbN / GaAs single quantum wells ͑SQWs͒ as a function of nitrogen concentration. These SQW layers were grown by the solid source molecular beam epitaxial technique. A maximum reduction of 328 meV in the photoluminescence ͑PL͒ peak energy of GaAsSbN was observed with respect to the reference GaAsSb QW. 8 K and RT PL peak energies of 0.774 eV ͑FWHM of ϳ25 meV͒ and 0.729 eV ͑FWHM of ϳ67 meV͒ ͑FWHM denotes full width at half maximum͒ corresponding to the emission wavelengths of 1.6 and 1.7 m, respectively, have been achieved for a GaAsSbN SQW of N ϳ 1.4%. The pronounced S-curve behavior of the PL spectra at low temperatures is a signature of exciton localization, which is found to decrease from 16 to 9 meV with increasing N concentration of 0.9%-2.5%. The diamagnetic shift of 13 meV observed in the magnetophotoluminescence spectra of the nitride sample with N ϳ 1.4% is smaller in comparison to the value of 28 meV in the non-nitride sample, indicative of an enhancement in the electron effective mass in the nitride QWs. Electron effective mass of 0.065m o has been estimated for a SQW with N ϳ 1.4% using the band anticrossing model.

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The opportunities, successes and challenges for GaInNAsSb

Cited by 55 publications

References 25 publications

Nitrogen incorporation and optical studies of GaAsSbN∕GaAs single quantum well heterostructures

Nitrogen incorporation and optical studies of GaAsSbN∕GaAs single quantum well heterostructures

Band offset determination of the GaAs/GaAsN interface using the density functional theory method

Optical studies of molecular beam epitaxy grown GaAsSbN∕GaAs single quantum well structures

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