1996
DOI: 10.1007/bf02648373
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The O-Ta (Oxygen-Tantalum) system

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Cited by 179 publications
(110 citation statements)
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References 60 publications
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“…According to XSMA data the Ta : O ratio averaged over the surface is different for local XSMA for regions of the carrier adjacent to the surface clusters of metals. The Ta : O ratios obtained by local XSMA data ( Table 2) indicate the presence in the adjacent layer of oxygen-deficient oxides based on Ta 2 O 5-x (x = 0.1-0.03 and 0.12-0.15), fragment of structures of which, according to [9], are identical to those observed in the structure of Ta These values are close to those determined earlier for the defect phase TaO 2-x , belonging to the rutile structure type (space group P4 2 /mnm with parameters a = 4.609 Å and c = 3.088 Å) (see [11,12]). …”
supporting
confidence: 74%
“…According to XSMA data the Ta : O ratio averaged over the surface is different for local XSMA for regions of the carrier adjacent to the surface clusters of metals. The Ta : O ratios obtained by local XSMA data ( Table 2) indicate the presence in the adjacent layer of oxygen-deficient oxides based on Ta 2 O 5-x (x = 0.1-0.03 and 0.12-0.15), fragment of structures of which, according to [9], are identical to those observed in the structure of Ta These values are close to those determined earlier for the defect phase TaO 2-x , belonging to the rutile structure type (space group P4 2 /mnm with parameters a = 4.609 Å and c = 3.088 Å) (see [11,12]). …”
supporting
confidence: 74%
“…Ta 2 O 5 has an orthorhombic phase up to ∼ 1350 • C, above which a transition to a tetragonal phase occurs [7,8]. Although the low-temperature orthorhombic phase is of technological relevance, it has proven difficult to characterize structurally.…”
mentioning
confidence: 99%
“…Their findings also suggest that a-Ta 2 O x provides the best binary TMO system to exhibit a continuously variable degree of electron localization and therefore the best opportunity to tune conduction as a function of x. Similarly, the binary simplicity of the ambient Ta-O phase diagram [23] is widely-cited as the explanation for the good repeatability and endurance characteristics of Ta 2 O x memristors for basic ON/OFF operation.…”
Section: Tablesmentioning
confidence: 88%
“…Despite the simplicity of the Ta-O phase diagram, the crystal structure of Ta 2 O 5 remains a subject of current debate [23][24][25] [27,28].…”
Section: Tablesmentioning
confidence: 99%