The nonlinear optical rectification and second harmonic generation in asymmetrical Gaussian potential quantum well: Effects of hydrostatic pressure, temperature and magnetic field

Abstract

In the present work, the effects of hydrostatic pressure, temperature, and magnetic field on the nonlinear optical rectification (OR) and second-harmonic generation (SHG) in asymmetrical Gaussian potential quantum well (QW) have been investigated theoretically. Here, the expressions for the optical properties are calculated by the compact-density-matrix approach and iterative method. Simultaneously, the energy eigenvalues and their corresponding eigenfunctions have been obtained by using the finite difference method. The energy eigenvalues and the shape of the confined potential are modulated by the hydrostatic pressure, temperature, and magnetic field. So the results of a number of numerical experiments indicate that the nonlinear OR and SHG strongly depends on the hydrostatic pressure, temperature, and magnetic field. This gives a new degree of freedom in various device applications based on the intersubband transitions of electrons.

The Combined Influence of Hydrostatic Pressure and Temperature on Nonlinear Optical Properties of GaAs/Ga0.7Al0.3As Morse Quantum Well in the Presence of an Applied Magnetic Field

“…The magnetic field is in-plane-oriented, taken along the confinement direction, , and the Landau gauge is used. The Hamiltonian system in the effective mass approximation is given by [ 14 , 15 , 16 ] where z represents the confinement direction of the QW, T is the temperature, is the pressure ( P )- and temperature ( T )-dependent electron effective mass in the well region, given by the expression [ 11 , 17 , 18 , 19 ] where is the free electron mass, eV is the energy related to the momentum matrix element, eV is the spin-orbit splitting, and is the variation of the energy gap at the -point for a GaAs semiconductor with a hydrostatic pressure and temperature as follows: eV, eV/kbar, and eV/kbar 2 .…”

Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal–Organic Chemical Vapor Deposition

“…While for metal–organic chemical vapor deposition (MOCVD) grown high In content InGaN epilayers, which is governed by a diffusion process and differs from MBE, progress has often been limited by significantly degraded crystal quality due to the deficient ammonia cracking (<5% at 700 °C), making MOCVD less attractive for growing higher In content InGaN and very few works have been dedicated to the morphological evolution and strain relaxation of such InGaN of relatively higher In contents grown by MOCVD. − However, MOCVD is still a leading industrial technique for the growth and fabrication of GaN-based optoelectronic devices. One the other hand, the nonlinear optical properties of high In content InGaN alloy, such as second harmonic generation , and optical rectification, , have attracted special interest because of its promising utilization and relevance in making optical switching and optical telecommunication devices. ,− Therefore, a deeper investigation of In incorporation kinetics, strain relaxation, and resultant morphological evolution of InGaN with high In content grown by MOCVD is currently important and necessary.…”

“…16−18 However, MOCVD is still a leading industrial technique for the growth and fabrication of GaN-based optoelectronic devices. One the other hand, the nonlinear optical properties of high In content InGaN alloy, such as second harmonic generation 19,20 and optical rectification, 21,22 have attracted special interest because of its promising utilization and relevance in making optical switching and optical telecommunication devices.…”

In plane magnetic field and intense laser field effects on second harmonic generation of asymmetric AlGaAs/GaAs double quantum well

“…E. Kasapoglu et al [5] report the absorption coefficient as well as the refractive index change, considering third order nonlinear corrections, with expression obtained in the compact density-matrix, taking into account the effect of external applied electric field. We can give some other references discussing nonlinear optical properties enhancement [6][7][8][9][10][11][12]. Now, we would like to talk about the non-resonant intense laser field (ILF) effect, which is an important external factor that can modify the potential profile seen by the charge carriers, as reported by F.M.S.…”