2010
DOI: 10.3938/jkps.56.120
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The Nonlinear Absorption Coefficient of Strong Electromagnetic Waves Caused by Confined Electrons in Quantum Wires

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Cited by 23 publications
(6 citation statements)
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“…This quantity is considered to be a function of the temperature T, the Fermi energy ¾ F and the radius R of CQWIP GaAs/GaAsAl. The parameters used in the numerical calculations 6,13) are as follow:¸= 10 ¹12 s, º = 10 4 W m ¹2 , μ = 5320 kg m ¹3 , v l = 2 © 10 3 m s…”
Section: Numerical Results and Discussionmentioning
confidence: 99%
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“…This quantity is considered to be a function of the temperature T, the Fermi energy ¾ F and the radius R of CQWIP GaAs/GaAsAl. The parameters used in the numerical calculations 6,13) are as follow:¸= 10 ¹12 s, º = 10 4 W m ¹2 , μ = 5320 kg m ¹3 , v l = 2 © 10 3 m s…”
Section: Numerical Results and Discussionmentioning
confidence: 99%
“…6) Also, study on the effect of AE in the normal bulk semiconductor has received a lot of attention. 710) Further, the AE effect was measured experimentally in a submicronseparated quantum wire 11) and in a carbon nano-tube.…”
Section: )mentioning
confidence: 99%
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“…This approach allows us to take into account the rate of change in unbalanced electron distribution function, and thus, shows the electron-phonon interaction picture clearly under the influence of a laser radiation field. This is the reason why this method has been used effectively in the study of EMW absorption effects in bulk semiconductors [8], Quantum wells [12], and Cylindrical quantum wires [13]. In the next section, we give the theoretical basis and basic calculations.…”
Section: Introductionmentioning
confidence: 99%
“…Then, the size effect appeared and makes almost physical properties of material change [1]. The properties of low-dimension system such as: Hall effect [2][3][4], absorption of electromagnetic waves, relative magnetoresistance, etc [5][6][7][8] are very different from the previous work studied on bulk semiconductor [9][10][11][12]. The magneto-thermoelectric effect, often called as Ettingshausen effect, which has just been researched in bulk semiconductors [13][14][15][16] is one of the electrical, magnetic and thermal effects of semiconductor systems.…”
Section: Introductionmentioning
confidence: 99%