By using a quantum kinetic equation for electrons, we studied magneto - thermoelectric effects in the doped semiconductor superlattice (DSSL) under the influence of electromagnetic waves (EMW). In case of the electron - acoustic phonon interaction, we have also figured out analytical expressions of the Ettingshausen coefficient (EC) in DSSL. These expressions are quite different from those which were obtained in the case of bulk semiconductors. The results are numerically calculated for the GaAs:Be/ GaAs:Si DSSL; we found that the EC depends on the characteristic parameters of EMW, temperature and the characteristic parameters of DSSL. The results are consistent with recently experimental observations but the EC is different from that in the bulk semiconductors or bismuth. In addition, the impact of the EMW on the Ettingshausen effect was also discovered. These are latest results which have been studied in terms of Ettingshausen effect in DSSL.
We calculated analytic expressions for the absorption coefficient (ACF) of a weak electromagnetic wave (EMW) by confined electrons in cylindrical quantum wires (CQW) in the presence of laser radiation by using the quantum kinetic equation for electrons in the case of electron-optical phonon scattering. The ACF of a weak EMW depends on the intensity E 01 and frequency Ω 1 of the external laser radiation (E 1 = E 01 sin(Ω 1 t + ϕ 1)); the intensity E 02 and frequency Ω 2 of the weak EMW (E 2 = E 02 sin(Ω 2 t)), the temperature T of the system and the radius R of CQW. Then, the analytic results are numerically calculated and discussed for GaAs/GaAsAl CQW. The numerical results show that the ACF of a weak EMW in a CQW can have negative values. So, in the presence of laser radiation, under proper conditions, the weak EMW is increased. This is different from the similar problem in bulk semiconductors and from the case of the absence of laser radiation.
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