The next generation 1200V Trench Clustered IGBT technology with improved trade-off relationship

Long, Hong Yao; Sweet, M.; Souza, M.M. De; Madathil, Sankara Narayanan Ekkanath

doi:10.1109/apec.2015.7104510

Cited by 7 publications

(7 citation statements)

References 9 publications

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“…Therefore, the off-state gate bias (0 V or -15 V) has no influence on the turn-off behavior of TCIGBT. High dV/dt controllability of TCIGBT with DA free performance is confirmed from the measurement results of the turn-off waveforms and maximum dV/dt as a function of R g of a 1.2 kV TCIGBT device [16] as shown in Figs. 12 (a) and (b), respectively.…”

Section: Da Free Solution -High Dv/dt Controllability By Tcigbtsupporting

confidence: 55%

“…Moreover, high dV/dt controllability at high operating current densities is also essential to satisfy various IGBT applications. In order to clarify the impact of DA on the dV/dt controllability of TIGBTs at high current densities, a 1.2 kV, 25 A TIGBT device in FS technology [17] was investigated in detail and compared with the experimental results of an NPT TCIGBT [16]. Fig.…”

Section: Impact Of Current Density On Dv/dt Controllabilitymentioning

confidence: 99%

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Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices

Luo

Madathil

Nishizawa

et al. 2021

IEEE Trans. Power Electron.

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Turn-off dV/dt controllability is an essential feature in IGBTs for flexible design in power switching applications. However, the occurrence of Dynamic Avalanche (DA) during the turn-off transients plays a key role on the turn-off power loss, dV/dt controllability and safe operating area of IGBTs. This paper aims to clarify the impact of DA on the turn-off characteristics of 1.2 kV trench IGBTs through 3-D TCAD simulations as well as experimental demonstrations. Measurement results show that DA is enhanced at high current density and high supply voltage conditions, which aggravates its influence on the dV/dt controllability as well as turn-off power loss. To eliminate the DA for high current density and low loss operations, a DA free design is experimentally demonstrated in the Trench Clustered IGBT (TCIGBT). Due to effective management of electric field and unique PMOS actions during turn-off, TCIGBT can retain high dV/dt controllability and low power loss at high current density operations.

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Section: Da Free Solution -High Dv/dt Controllability By Tcigbtsupporting

confidence: 55%

Section: Impact Of Current Density On Dv/dt Controllabilitymentioning

confidence: 99%

Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices

Luo

Madathil

Nishizawa

et al. 2021

IEEE Trans. Power Electron.

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“…Absence of the DA in TCIGBT is clearly evident from the experimental results of the switching waveforms and maximum dV/dt of 1.2 kV, 40 Ampere devices [11] as a function of Rg as shown in Figures 5(a) and (b), respectively. The dV/dt can be controlled even at low Rg conditions.…”

Section: Da Free Solution -Dv/dt Controllability By Tcigbtmentioning

confidence: 84%

High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation

Luo

Madathil

Nishizawa

et al. 2020

2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

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“…9(a) and (b). These devices show a Vce(sat) of 1.8 V at 140 A/cm 2 at Room Temperature (R.T.) and can support 1.6 kV and are short circuit proof [15]. Although the demonstrated devices were made in Non-Punch-Through (NPT) technology, moving to a thinner FS technology has no impact on the DA, as discussed later.…”

Section: Dynamic Avalanche Free Design: Tcigbtmentioning

confidence: 99%

“…Despite the fact that the FS TIGBT (device thickness = 115 µm) features a much thinner device thickness than the NPT TCIGBT (device thickness = 200 µm), the TCIGBT shows much lower on-state losses in comparison to that of TIGBT at both rated current density (Jc = 140 A/cm 2 ) and high current densities due to thyristor conduction. The other characteristics of NPT-TCIGBT and FS-TIGBT have been reported in [15]. Fig.…”

Section: Impact Of Current Density On Da Performancementioning

confidence: 99%