The neon gas field ion source—a first characterization of neon nanomachining properties

Livengood, Richard H.; Tan, Sheng; Hallstein, Roy; Notte, John; McVey, Shawn; Rahman, F.

doi:10.1016/j.nima.2010.12.220

Cited by 50 publications

(30 citation statements)

References 7 publications

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“…The availability of different gases for GFIS-such as neon 104,105 -and the combination with a classic liquid metal gallium FIB 106,107 makes the technique interesting for various types of materials modifications. The fine beam produced by the GFIS has the potential to engineer structures with a length scale that is well below what is currently possible with LMIS based FIB techniques.…”

Section: Materials Modificationmentioning

confidence: 99%

Helium ion microscopy

Hlawacek

Veligura

Gastel

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

207

155

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Helium ion microcopy based on gas field ion sources represents a new ultrahigh resolution microscopy and nanofabrication technique. It is an enabling technology that not only provides imagery of conducting as well as uncoated insulating nanostructures but also allows to create these features. The latter can be achieved using resists or material removal due to sputtering. The close to free-form sculpting of structures over several length scales has been made possible by the extension of the method to other gases such as neon. A brief introduction of the underlying physics as well as a broad review of the applicability of the method is presented in this review.

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Section: Materials Modificationmentioning

confidence: 99%

Helium ion microscopy

Hlawacek

Veligura

Gastel

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

207

155

View full text Add to dashboard Cite

show abstract

“…Note that the Gas Field Ionization Source (GFIS) is a promising alternative for ion beam imaging with a brightness of more than 10 9 A/(m 2 sr eV) [4] and a longitudinal energy spread of less than 1 eV [4] allowing sub-nanometer resolution. Due to the lower sputter yield and subsurface damage of the helium [4] and neon [5] based GFIS, this apparatus is less suitable for sample modification than the LMIS [6]. In order to create a FIB with the possibility of high-resolution sample manipulation a heavy ion based source is required with a smaller longitudinal energy spread and at least equal brightness than the LMIS.…”

Section: Introductionmentioning

confidence: 99%

Performance predictions for a laser-intensified thermal beam for use in high-resolution focused-ion-beam instruments

et al. 2014

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Photo-ionization of a laser-cooled and compressed atomic beam from a high-flux thermal source can be used to create a high-brightness ion beam for use in Focus Ion Beam (FIB) instruments. Here we show using calculations and Doppler cooling simulations that an atomic rubidium beam with a brightness of 2.1 × 10 7 A/(m 2 sr eV) at a current of 1 nA can be created using a compact 5 cm long 2D magneto-optical compressor which is more than an order of magnitude better than the current state of the art Liquid Metal Ion Source.

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“…In 2006, a helium ion microscope (HIM) commercialized by ALIS inc. performed to image with high spatial resolution, minimal charging and surface sensitivity [3]. He ion beam generated in the HIM could be focused into a sub-nm probe size on a sample and resulted in possibility of milling and observing fine structures without ionic contamination problems caused by Ga ions [4,5]. Since an angular current density of GFIS is several orders of magnitude lower than that of a gallium liquid metal ion source (Ga-LMIS), which is equipped with an existing focused ion beam (FIB) system.…”

Section: Introductionmentioning

confidence: 99%

Time of Flight Analysis of Field-Ionized He in Mixtures with Ne or Ar

Komaki

Nagai

Iwata

et al. 2016

e-J. Surf. Sci. Nanotech.

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An enhancement of current of field-ionized He from a W⟨111⟩ gas field ion emitter in mixtures with Ne or Ar and its origin were investigated by a field ion microscope equipped with a time of flight (ToF) spectrometer. He ion current was increased up to three times by He-Ne mixture and two times by He-Ar mixture, respectively. Mass to charge ratio spectra show that only He atoms were field-ionized at a field of operating condition of a He gas field ion source. In both gas mixture conditions, a peak of singly charged He in ToF spectra shifted after the mixture of He and Ne or Ar, which corresponds to that He was field-ionized at lower potential energy. These observations indicate that He atoms field-adsorbed on a tungsten surface are exchanged for Ne or Ar atoms and the exchange of species of field-adsorbed atom is also related to the enhancement of He ion current.

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The neon gas field ion source—a first characterization of neon nanomachining properties

Cited by 50 publications

References 7 publications

Helium ion microscopy

Helium ion microscopy

Performance predictions for a laser-intensified thermal beam for use in high-resolution focused-ion-beam instruments

Time of Flight Analysis of Field-Ionized He in Mixtures with Ne or Ar

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