The need for EUV lithography at advanced technology for sustainable wafer cost

Mallik, Arindam; Vansumere, Wim; Ryckaert, Julien; Mercha, A.; Horiguchi, N.; Demuynck, S.; Bömmels, J.; Tőkei, Zsolt; Vandenberghe, Geert; Ronse, Kurt G.; Thean, A.; Verkest, D.; Lebon, H.; Steegen, An

doi:10.1117/12.2011528

Cited by 15 publications

(10 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Furthermore, we have proposed and evaluated various EUVLbased patterning solutions to have an economically sustainable dimensional scaling. The wafer cost evolution at advanced technology node have been analyzed in detail in recent times [5], [6]. However, the semiconductor industry will benefit from a systematic analysis at a die level.…”

Section: Figure 1 -Imec Advanced Logic Lithography Roadmapmentioning

confidence: 99%

“…The cost analysis framework used in this study is an internal framework that is made of two primary components, namely virtual process flow and Cost of Ownership (CoO) database of the fab toolset. The details of these two components are discussed in earlier publications [5], [6]. We have used a representative process flow N28 till N7 technology nodes developed and verified by the imec Process Technology team.…”

Section: Impact On Wafer Costmentioning

confidence: 99%

See 1 more Smart Citation

Maintaining Moore’s law: enabling cost-friendly dimensional scaling

et al. 2015

Self Cite

View full text Add to dashboard Cite

Moore's Law (Moore's Observation) has been driving the progress in semiconductor technology for the past 50 years. The semiconductor industry is at a juncture where significant increase in manufacturing cost is foreseen to sustain the past trend of dimensional scaling. At N10 and N7 technology nodes, the industry is struggling to find a cost-friendly solution. At a device level, technologists have come up with novel devices (finFET, Gate-All-Around), material innovations (SiGe, Ge) to boost performance and reduce power consumption. On the other hand, from the patterning side, the relative slow ramp-up of alternative lithography technologies like EUVL and DSA pushes the industry to adopt a severely multi-patterning-based solution. Both of these technological transformations have a big impact on die yield and eventually die cost. This paper is aimed to analyze the impact on manufacturing cost to keep the Moore's law alive. We have proposed and analyzed various patterning schemes that can enable cost-friendly scaling. We evaluated the impact of EUVL introduction on tackling the high cost of manufacturing. The primary objective of this paper is to maintain Moore's scaling from a patterning perspective and analyzing EUV lithography introduction at a die level.

show abstract

Section: Figure 1 -Imec Advanced Logic Lithography Roadmapmentioning

confidence: 99%

Section: Impact On Wafer Costmentioning

confidence: 99%

Maintaining Moore’s law: enabling cost-friendly dimensional scaling

et al. 2015

Self Cite

View full text Add to dashboard Cite

show abstract

“…However, several technological hurdles must be overcome before the implementation of EUV is possible [1][2][3]. Photoresist performance, in particular, must improve dramatically before EUVL can be used in the manufacture of IC devices [4]. Many new resist platforms have been explored in recent years, to find pathways for the dramatic impact in lithographic performance.…”

Section: Introductionmentioning

confidence: 99%

EUV Mechanistic Studies of Antimony Resists

Murphy

Narasimhan

Grzeskowiak

et al. 2017

J. Photopol. Sci. Technol.

View full text Add to dashboard Cite

We have developed a method to study the photomechanism of our antimony carboxylate platform Ph 3 Sb(O 2 CR') 2 . A series of mechanistic studies followed the production of reaction byproducts by mass spectrometer, as they leave the film during exposure to EUV photons or 80 eV electrons. The major volatile products are CO 2 , benzene and phenol. The rate of outgassing is well-correlated with the reaction energy of decarboxylation of the carboxylate ligand as determined by density functional theory. Additionally, a deuterium labeling study was conducted to determine the source of hydrogen needed to convert phenyl and phenoxy to benzene and phenol. Specifically, EUV exposure of Ph 3 Sb(O 2 CCD 3 ) 2 creates d 0 -benzene and d 1 -phenol with >95% isotopic purity. Several mechanistic pathways are proposed and discussed.

show abstract

“…In order to sustain Moore's law 1 , which says that computing power will double every two years, it is imperative that the semi-conductor industry makes the transition to extreme ultra-violet (EUV) lithography for high volume manufacturing (HVM) 2 . The radiation sources needed for HVM EUV lithography rely on laser-produced plasmas (LPP) to produce the required EUV radiation [3][4][5] .…”

Section: Introductionmentioning

confidence: 99%

Impact of design-parameters on the optical performance of a high-power adaptive mirror

Koek

Nijkerk

Smeltink

et al. 2017

High-Power Laser Materials Processing: Applications, Diagnostics, and Systems VI

View full text Add to dashboard Cite

TNO is developing a High Power Adaptive Mirror (HPAM) to be used in the CO 2 laser beam path of an Extreme UltraViolet (EUV) light source for next-generation lithography. In this paper we report on a developed methodology, and the necessary simulation tools, to assess the performance and associated sensitivities of this deformable mirror. Our analyses show that, given the current limited insight concerning the process window of EUV generation, the HPAM module should have an actuator pitch of ≤ 4 mm.Furthermore we have modelled the sensitivity of performance with respect to dimpling and actuator noise. For example, for a deformable mirror with an actuator pitch of 4 mm, and if the associated performance impact is to be limited to smaller than 5%, the actuator noise should be smaller than 45 nm (rms). Our tools assist in the detailed design process by assessing the performance impact of various design choices, including for example those that affect the shape and spectral content of the influence function.

show abstract

The need for EUV lithography at advanced technology for sustainable wafer cost

Cited by 15 publications

References 0 publications

Maintaining Moore’s law: enabling cost-friendly dimensional scaling

Maintaining Moore’s law: enabling cost-friendly dimensional scaling

EUV Mechanistic Studies of Antimony Resists

Impact of design-parameters on the optical performance of a high-power adaptive mirror

Contact Info

Product

Resources

About