The nc-Si films with controlled crystal structure and electrical conductivity via the re-crystallization approach

Yang, Fei; Li, Xiang; Ren, Zhaohui; Xu, Gang; Liu, Yong; Shen, Ge; Han, Gaorong

doi:10.1016/j.jnoncrysol.2012.10.006

Cited by 9 publications

(5 citation statements)

References 30 publications

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“…, the Raman peaks of single Si x N and Si y N sample are posited at 518.3 and 516.7 cm −1 , respectively. We can easily evaluate the mean crystallite size of nc‐Si from the formula d = 2 π ( B /Δ ω ) 1/2 , where B = 2.24 cm −1 nm 2 and Δ ω is the shift of the crystalline peak for the nanocrystals as compared to a single crystal Si peak at 520 cm −1 . The calculated mean grain size is 6.9 and 4.8 nm in single Si x N sample and single Si y N sample, respectively.…”

Section: Resultsmentioning

confidence: 99%

Ostwald ripening in segregated Si_xN/Si_yN multilayers

Jiang

et al. 2016

Physica Status Solidi (a)

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In this study, we investigate the microstructure and formation of segregated silicon nanocrystals (nc‐Si) from annealed Si‐rich SixN/SiyN multilayers. It is found the nc‐Si are separated and arranged in every sublayer with two different grain sizes. Through XPS and Raman analysis, it is discovered that Si atoms diffuse from the SiyN sublayers with smaller nc‐Si to the SixN sublayers with larger nc‐Si during annealing. Meanwhile, the grain size of SixN sublayers increase and that of SiyN sublayers decrease, compared to single layer sample. It is suggested that the atomic diffusion with grain size change phenomenon is ascribed to coalescence‐like growth followed by Ostwald ripening process, which eventually results in Si atoms transport from small Si clusters in SiyN sublayers to large Si cluster in SixN sublayers and forms the segregated nc‐Si multilayers. This work gives us better understanding of the nc‐Si growth and atomic diffusion in annealed Si‐rich multilayers.

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Section: Resultsmentioning

confidence: 99%

Ostwald ripening in segregated Si_xN/Si_yN multilayers

Jiang

et al. 2016

Physica Status Solidi (a)

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“…The reason for the increase of crystalline volume fraction is probably that the crystallization of the amorphous phase in films has taken place by nucleation and growth during annealing treatment. Generally, the formation of silicon crystals in films includes four steps [22,23]: incubation, nucleation, growth and steady state. The basic Si-Si network remained in amorphous silicon films, meanwhile a great amount of distorted Si-Si bonds exist in amorphous silicon films as well.…”

Section: Piezoresistive Property Evaluationmentioning

confidence: 99%

Influence of annealing on microstructure and piezoresistive properties of boron-doped hydrogenated nanocrystalline silicon thin films prepared by PECVD

Pan

Ding

Cheng

2015

J Mater Sci: Mater Electron

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Boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited by plasma enhanced chemical vapor deposition technique. Annealing treatment was performed on the deposited films at 400°C for 60 min in nitrogen atmosphere. Microstructure of the as-deposited and annealed films was characterized by X-ray diffraction (XRD) and Raman scatter spectra, surface morphology of these films was analyzed with atomic force microscopy (AFM), and piezoresistive properties of these films were evaluated by a four-point bending-based measurement system. The influence of annealing treatment on microstructure and piezoresistive properties of borondoped nc-Si:H thin films was comparatively studied. The Raman scatter spectra and XRD results together with AFM analysis results revealed that annealing treatment can increase the average grain size and crystalline volume fraction of boron-doped nc-Si:H thin films, and can alter grains distribution and concentration of the films. The piezoresistive property evaluation results showed that annealing treatment can increase the gauge factor of boron-doped ncSi:H thin films from 29.9 to 42.3. These results indicated that annealing treatment can act as an effective way to improve piezoresistive sensitivity of boron-doped nc-Si:H thin films. In this paper, the correlation between borondoped nc-Si:H thin films' piezoresistive properties and microstructure changes induced by annealing was discussed in detail.

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“…This study proposes exploring the optimization effect of the optoelectronic thin film properties on the biomedical wafer under different annealing methods. Some studies have pointed out that the crystalline properties of the annealed silicon film can be controlled [18], and the annealing temperature is higher than the temperature during deposition of the film, which can improve the film quality (reduce film defects) [19]. Typical LIDEP wafer photoelectric thin films are prepared from amorphous silicon films, which will produce photodegradation (S-W effect) [20] after being irradiated, thereby reducing the electrical properties of biomedical wafers.…”

Section: Introductionmentioning

confidence: 99%

High-Quality Nanocrystalline Silicon (nc-Si:H) Thin Film With Mixed-Phase and Its Application of Circulating Tumor Cell DEP Biochip

Lin

et al. 2023

IEEE Access

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This paper proposes the light-induced dielectrophoresis (DEP) biochip prepared by 40.68-MHz very high-frequency plasma-enhanced chemical vapor deposition (VHFPECVD) and post-microwave annealing treatment. The biochip can screen circulating tumor cells without using any antibodies and biomarkers. Therefore, the biochip's high efficiency and high purity are goals for effectively conducting the whole genome sequencing (WGS) analysis. The quality, uniformity, and electrical properties of the prepared silicon thin films affect the performance parameters of the biochip. High-quality nanocrystalline silicon (nc-Si:H) thin film is the core technology in the biochip. High-density nc-Si:H thin films can be well prepared using 40.68 MHz VHFPECVD and post-treatment microwave annealing. Microwave annealing improves the crystallinity and reduces the defects in the nc-Si:H thin films discovered by Fourier-transform infrared spectroscopy (FTIR). The prepared thin film with a crystallinity of 5% enhanced 38.3%, surface roughness of 10.93 nm, and a photo/dark current of 7.1×10 3 with a power density of 60mW/cm 2 was obtained. The biochip showed a recovery rate of 81.3%, purity of 78.6%, and survival rate of 91% for applying to the circulating tumor cells (CTCs).INDEX TERMS LIDEP biochip, Light-induced dielectrophoresis, Nano-crystallite silicon thin film.

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The nc-Si films with controlled crystal structure and electrical conductivity via the re-crystallization approach

Cited by 9 publications

References 30 publications

Ostwald ripening in segregated Si_xN/Si_yN multilayers

Ostwald ripening in segregated Si_xN/Si_yN multilayers

Influence of annealing on microstructure and piezoresistive properties of boron-doped hydrogenated nanocrystalline silicon thin films prepared by PECVD

High-Quality Nanocrystalline Silicon (nc-Si:H) Thin Film With Mixed-Phase and Its Application of Circulating Tumor Cell DEP Biochip

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The nc-Si films with controlled crystal structure and electrical conductivity via the re-crystallization approach

Cited by 9 publications

References 30 publications

Ostwald ripening in segregated SixN/SiyN multilayers

Ostwald ripening in segregated SixN/SiyN multilayers

Influence of annealing on microstructure and piezoresistive properties of boron-doped hydrogenated nanocrystalline silicon thin films prepared by PECVD

High-Quality Nanocrystalline Silicon (nc-Si:H) Thin Film With Mixed-Phase and Its Application of Circulating Tumor Cell DEP Biochip

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Ostwald ripening in segregated Si_xN/Si_yN multilayers

Ostwald ripening in segregated Si_xN/Si_yN multilayers