The nature of swirls and its significance for understanding point defects in silicon

Föll, H.; Kolbesen, Bernd O.; Frank, W.

doi:10.1002/pssa.2210290160

Cited by 28 publications

(3 citation statements)

References 11 publications

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“…These defects predominantly manifest as point defects such as vacancies (v) and self-interstitials (i), which can further evolve into more intricate defect complexes. In the 1960–1970s, various defects in Si were meticulously identified and characterized through experimental studies, − thereby establishing a foundational knowledge base for subsequent explorations into the properties and behavior of defects within Si crystals.…”

Section: Introductionmentioning

confidence: 99%

“…Self-interstitials tend to cluster together forming circular or spiral arrangements around a point defect or along a glide plane in Si crystals, and thus lead to the formation of dislocation loops. On the other hand, vacancies participate indirectly by influencing motion, annihilation, and nucleation processes of dislocations. , During that period when technology for defect control was limited, a higher V G (v-rich condition) was typically favored to ensure successful crystal growth. This strategic approach is geared toward avoiding the formation of dislocation loops that arise from supersaturated self-interstitials, a phenomenon which, if unchecked, can contribute to structural loss and eventual device failure.…”

Section: Introductionmentioning

confidence: 99%

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Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution

Hu,

He,

Pei

et al. 2024

Crystal Growth & Design

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The distribution of intrinsic point defects, comprising vacancies and self-interstitials, plays a pivotal role in determining the quality and properties of silicon wafers, with profound implications for their applications in the semiconductor industry. Previous research posits that the dominant defect type in Czochralski (Cz) Si can be manipulated by adjusting the ratio of the pulling rate (V) to the axial thermal gradient (G). The critical value of V G establishes the equilibrium between vacancies and selfinterstitials. However, conventional theories often consider ( )to be a constant based on the assumption of thermal equilibrium.In this study, we present evidence that the formation and diffusion of the intrinsic point defects are influenced by thermal stress, rendering ( ) V G crit dependent on thermal stress distribution. Through a combination of first-principles calculations and finite element simulations, we establish a quantitative theoretical model that considers thermal stress. Based on this model, the impact of thermal stress on the defect distribution during Cz Si growth and the value of ( ) V G crit is elucidated. Our findings are validated through experimental growth of Cz Si and analytical testings. This work not only contributes to a deeper understanding of the microscopic mechanisms governing defect dynamics in Si but also advances Cz Si growth technology, ultimately enhancing the quality of the resultant Si wafers.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution

Hu,

He,

Pei

et al. 2024

Crystal Growth & Design

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“…Nevertheless, the scientific community was slow in accepting its key ideas, namely the dominance of self-interstitials at high temperatures in Si and the origin of the ubiquitous differences between Si and Ge. A turning point came when by transmission electron microscopy it was shown [13,14] that the swirl defects in dislocation-free Si single crystals grown by the float-zone technique were made up of interstitial atoms and not of vacancies as had, without any experimental support, previously been assumed as a matter of course. As already mentioned, it took, nevertheless, decades until the textbooks responded to the new insights.…”

mentioning

confidence: 99%

Self‐diffusion in silicon – Change of a paradigm

Seeger

2011

Physica Status Solidi (b)

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Diffusion processes play a key role in the fabrication of semiconductor devices. For a long time the underlying mechanisms were thought to be analogous to those in metals, based on vacancies as thc dominant lattice defects in thermal equilibrium. From the mid‐sixties onwards it became clear that this picture is invalid for Si, where strongly relaxed self‐interstitials are dominant and responsible for self‐ and Group‐III‐ diffusion. Inter alia, this change of a paradigm led to novel concepts and to the quantitative explanation of the diffusion of so‐called hybrids such as Au, Pt, and Zn in Si by the so‐called kick‐out mechanism.

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Comparison between swirl‐type defects in float‐zone and those in czochralski silicon single crystals

Jakowlew¹,

Jeske²,

Weyher

1978

Cryst Res and Technol

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Dedicated to Professor Hermann NEELS on the occasion of his 65th birthdayComparison is presented between the morphology of "swirls" etch pits occurring in the float-zone and those in Czochralski silicon crystals after various heat treatments. It appears that the difference in the morphology of "swirls" etch pits results from the difference in the structure of defects. The influence of heat-treatment temperature and composition of the ambient atmosphere upon the density and the morphology of the etch pits have been discussed.Vergleichsuntersuchungen zur Morphologie von "swirl"-Atzgruben nach unterschiedlicher Warmebehandlung in Silizinmeinkristallen, gezogen nach dem Zonenschmelz-und Czochralski-Verfahren, werden vorgelegt. Der Unterschied in der Morphologie der Atzgruben beruht auf der unterschiedlichen Struktur der Defekt,e. Der EinfluB der Temperatur und der Zusammensetzung der Schutzgasatmosphare wiihrend der Wlirmebehandlung auf die Dichte und Morphologie der "swirl"-Atzgruben wird diskutiert.

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The nature of swirls and its significance for understanding point defects in silicon

Cited by 28 publications

References 11 publications

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution

Self‐diffusion in silicon – Change of a paradigm

Comparison between swirl‐type defects in float‐zone and those in czochralski silicon single crystals

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