1990
DOI: 10.1016/0022-3697(90)90059-o
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The nature of recombination centres in silver- and chlorine-doped CdS phosphors

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Cited by 19 publications
(6 citation statements)
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“…The Ñuctuations of defect potentials cause widening of the defect levels within the forbidden gap of CIGS and so-called band tails are formed. Spatial potential Ñuctuations are quite common in highly doped and compensated semiconductors [4,5], for which the theory describing the electrical and optical properties was developed by Shklovskii and Efros [6], and by Levanyuk and Osipov [7]. It was shown that the edge emission in highly compensated semiconductors essentially includes two typical emission bands : the band to tail (BT) and the band to band (BB) bands, shown schematically in Fig.…”
Section: Theoretical Backgroundmentioning
confidence: 99%
“…The Ñuctuations of defect potentials cause widening of the defect levels within the forbidden gap of CIGS and so-called band tails are formed. Spatial potential Ñuctuations are quite common in highly doped and compensated semiconductors [4,5], for which the theory describing the electrical and optical properties was developed by Shklovskii and Efros [6], and by Levanyuk and Osipov [7]. It was shown that the edge emission in highly compensated semiconductors essentially includes two typical emission bands : the band to tail (BT) and the band to band (BB) bands, shown schematically in Fig.…”
Section: Theoretical Backgroundmentioning
confidence: 99%
“…For small, wide-bandgap CdSe NCs (energy gap, E g > 2.1 eV), the Mn d states behave as radiative recombination centres for band-edge excitons, resulting in the typical Mn 2+ luminescence at ~2.1 eV sensitized by the host particle 9 , whereas for larger NCs (E g < 2.1 eV), the unpaired electronic spins of the Mn ions interact with photogenerated 17 and electrically injected 18 excitons to form magnetic polarons. Conversely, Cu and Ag ions introduce a single intragap deep acceptor level close to the host valence band (VB) [19][20][21][22] , which radiatively captures a conduction band (CB) electron 10,11,23,24 , making the dopant-related emission subject to quantum confinement and heterostructuring 23 . Being aliovalent with respect to cations in ii-vi and iii-v semiconductors, their insertion changes the overall charge within the host compound, resulting in p-or n-type doping depending on their coordination state 11,12,[23][24][25][26] .…”
mentioning
confidence: 99%
“…As a result, Ag cations assume the + 1 oxidation state almost exclusively, whereas the stable + 2 configuration is found in rare compounds where Ag 2+ ions are protected against reduction by suitable ligands 28,32 . Consistently, in bulk metal chalcogenides, Ag atoms are inserted as nonmagnetic + 1 impurities 33 with electronic configuration [Kr]4d 10 , often coupled to a compensating defect ensuring charge neutrality 19,34 . Having a full d shell, luminescence in Ag-doped systems requires transfer of the photoexcited hole from the host VB to the Ag + site, which then behaves as a radiative acceptor centre for a CB electron 24,29,34,35 .…”
mentioning
confidence: 99%
“…Columnar and tubular films of Ag 2 S, Cu 2 S, Bi 2 S 3 , or Sb 2 S 3 were prepared from columnar ZnO films. [70][71][72][73][74] With respect to anion exchange, Wang and co-workers reported the transformation of columnar ZnO into tubular ZnS by exposure to H 2 S gas. 75 The conversion of ZnO into ZnS nanotubes occurred in solution and was formed by a direct reaction of H 2 S with the surface layer of ZnO in the presence of water.…”
Section: Application Of Ion Exchange Synthesis To Prepare Hollow Stru...mentioning
confidence: 99%