The nature of Mn center and exchange interaction in Ga1−xMnxAs dilute magnetic semiconductor

Twardowski, A.

doi:10.1016/s0921-5107(99)00058-6

Cited by 16 publications

(13 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The first type of SMSC's investigated in the late 1970s were cubic crystals like Hg 1−x Mn x Te, Pb 1−x Mn x Te and Sn 1−x Mn x Te [3][4][5][6][7][8]. Thereafter, many other compounds have been grown based on II-VI and III-V semiconductors [9,10]. Although manganese is still the most common substituting metallic ion, ampoule was lowered to the cold end with a speed of 1 cm per day.…”

Section: Introductionmentioning

confidence: 99%

Structural and photoemission investigations of a new pseudo binary semimagnetic semiconductor: Sn1−xMnxSe2

Mirabella

Schmerber

Golacki

et al. 2004

Materials Science and Engineering: B

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Structural and photoemission investigations of a new pseudo binary semimagnetic semiconductor: Sn1−xMnxSe2

Mirabella

Schmerber

Golacki

et al. 2004

Materials Science and Engineering: B

View full text Add to dashboard Cite

mentioning

confidence: 98%

“…Interestingly, the broadening is observed in epitaxial layers with relatively low Mn concentration (0.5%), where one would expect to have a system of well-separated impurities. The broadening has been tentatively ascribed to effects of demagnetizing field [4].Photoelectron spectroscopy is the most direct method for probing the electron structure. An issue of concern in this context is the intrinsic surface sensitivity of this technique.…”

mentioning

confidence: 99%

“…It is generally agreed that the ferromagnetic state is due to Mn atoms in substitutional Ga sites [2]. From electron spin resonance (ESR) and optical data it is known that individual Mn atoms occur in either an ionized 3d 5 or a neutral (3d 5 + hole) state, the latter being the reason for the p-type behavior with the acceptor level at 113 meV above the valence band maximum (VBM) [3,4]. In systems with higher Mn concentrations the ESR data are found to be strongly broadened [4] and the situation is less clear.…”

mentioning

confidence: 99%

“…From electron spin resonance (ESR) and optical data it is known that individual Mn atoms occur in either an ionized 3d 5 or a neutral (3d 5 + hole) state, the latter being the reason for the p-type behavior with the acceptor level at 113 meV above the valence band maximum (VBM) [3,4]. In systems with higher Mn concentrations the ESR data are found to be strongly broadened [4] and the situation is less clear. Interestingly, the broadening is observed in epitaxial layers with relatively low Mn concentration (0.5%), where one would expect to have a system of well-separated impurities.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Effects of nonuniform Mn distribution in (Ga,Mn)As

et al. 2014

View full text Add to dashboard Cite

Resonant in situ photoemission from Mn 3d states in Ga 1−x Mn x As is reported for Mn concentrations down to the very dilute level of 0.1%. Concentration-dependent spectral features are analyzed on the basis of first-principles calculations for systems with selected impurity positions as well as for random alloys. Effects of direct Mn-Mn interaction are found for concentrations as low as 2.5%, and are ascribed to statistical (nonuniform) distribution of Mn atoms. In the quest for magnetic semiconductors with potential use in spintronics, (Ga,Mn)As has emerged as the prototype system with documented spin-polarization of the electron states. Even though the Curie temperature of (Ga,Mn)As is still too low for practical implementations, the transport properties can be controlled to the extent that device structures based on the unusual magnetic characteristics can be explored [1]. In this perspective it is remarkable that the electronic structure of (Ga,Mn)As remains poorly characterized. It is generally agreed that the ferromagnetic state is due to Mn atoms in substitutional Ga sites [2]. From electron spin resonance (ESR) and optical data it is known that individual Mn atoms occur in either an ionized 3d 5 or a neutral (3d 5 + hole) state, the latter being the reason for the p-type behavior with the acceptor level at 113 meV above the valence band maximum (VBM) [3,4]. In systems with higher Mn concentrations the ESR data are found to be strongly broadened [4] and the situation is less clear. Interestingly, the broadening is observed in epitaxial layers with relatively low Mn concentration (0.5%), where one would expect to have a system of well-separated impurities. The broadening has been tentatively ascribed to effects of demagnetizing field [4].Photoelectron spectroscopy is the most direct method for probing the electron structure. An issue of concern in this context is the intrinsic surface sensitivity of this technique. This, in combination with the metastable character of (Ga,Mn)As at concentrations of interest (in the range of 1%), prohibits standard surface preparation involving ion beam surface cleaning and annealing at sufficiently high temperatures (above 300• C) to restore the surface order. Although this is obvious, it is remarkable that only a few in situ studies are available so far (see, e.g., [5,6]). Even more surprising, some of the "generally accepted" details about the electronic structure are derived from studies involving such treatment even though they are in conflict with results from in situ studies. Specifically it has been demonstrated that the energy of the main Mn 3d induced valence band structure is shifted by about 1 eV towards higher binding energy by such * krister.karlsson@his.se treatment [5], yet the most quoted value is that derived from ex situ treated samples [7].A particularly important issue in the context of magnetism in (Ga,Mn)As is the nature of electron states mediating the ferromagnetic coupling. The so far most successful description of ferromagnetism in (Ga,Mn)As has ...

show abstract

Origin of Ferromagnetism in Co-Implanted ZnO

Akdoğan

Zabel

2013

Nanostructured Materials for Magnetoelectronics

View full text Add to dashboard Cite

The nature of Mn center and exchange interaction in Ga1−xMnxAs dilute magnetic semiconductor

Cited by 16 publications

References 43 publications

Structural and photoemission investigations of a new pseudo binary semimagnetic semiconductor: Sn1−xMnxSe2

Structural and photoemission investigations of a new pseudo binary semimagnetic semiconductor: Sn1−xMnxSe2

Effects of nonuniform Mn distribution in (Ga,Mn)As

Origin of Ferromagnetism in Co-Implanted ZnO

Contact Info

Product

Resources

About