The nature of edge luminescence of CdTe:Mg diffusion layers

Makhniy, V. P.; Kosolovskiy, V. V.; Slyotov, M. M.; Skrypnyk, M. V.; Slyotov, A. M.

doi:10.1134/s1063782610090101

Cited by 4 publications

(4 citation statements)

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“…• C, the annealing time was 1 h. A differential reflection spectrum R ω analysis confirmed a formation of the new semiconducting film on the illuminated substrate's side due to the thermal treatment [3]. A peak in the R ω signal was observed at the photon energy of hν = 3.3 eV, which was well correlated with the zinc oxide band gap energy E g at 300 K [4].…”

Section: Methodsmentioning

confidence: 59%

Electrical Properties of Anisotype ZnO/ZnSe Heterojunctions

2009

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Section: Methodsmentioning

confidence: 59%

Electrical Properties of Anisotype ZnO/ZnSe Heterojunctions

2009

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“…The samples were divided into two groups. The first group of samples was processed in a suspension of alkali metals [11] Li-CdTe:Li. The second group of samples was not subjected to treatment and is further designated as CdTe.…”

Section: Manufacturing Technology Of Sbdsmentioning

confidence: 99%

Surface-Barrier CdTe Diodes for Photovoltaics

Mazur¹,

Mazur²,

Halushchak³

2023

J. Nano- Electron. Phys.

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In this paper, a comparative analysis of the use of semiconductor solar cells based on single-crystal, polycrystalline and amorphous silicon (Si), as well as cadmium telluride (CdTe) in the energy sector is carried out. It is shown that the advantages of thin-film technology and CdTe itself as a direct-gap semiconductor open the prospect of large-scale production of competitive CdTe solar modules (batteries). The technology of manufacturing substrates, applying indium ohmic contact to the plates, exposing some of the substrates to a number of additional treatments in an aqueous suspension of alkali metals, in particular Li -CdTe:Li and conducting research on them, as well as on chemically etched substrates that have not undergone any additional processing and conventionally designated CdTe. The possibilities of using devices based on single-crystal CdTe, which are called surface barrier diodes (SBDs), are being studied for converters. Technological advances that lead to changes in the physicochemical properties of single-crystal surfaces of n-CdTe substrates (their main optical, electrical, and photoelectric parameters, as well as the characteristics of metal-semiconductor contacts based on single-crystal cadmium telluride) are being discussed. Analyzing the properties of the research objects it should be noted that surface modification not only affects the potential barrier height but also significantly changes the course of electric and photoelectric processes, while the surface morphology of CdTe:Li substrates remains similar to unmodified ones, although the SBDs based on them are noticeably higher. It was also found that the rate of surface recombination of SBDs based on substrates with a surface nanostructure is two and one orders of magnitude lower than in structures based on basic substrates and alkali metal salts treated in suspension, respectively. The modification of substrates leads to an increase in the efficiency of solar cells (SCs), and the highest photoconversion efficiency is observed for SBDs based on substrates with a surface nanostructure and reaches 9 % at 300 K under AM2 illumination. The methods of using the technologies proposed in this work for the creation of surface-barrier photocells based on thin CdTe films are considered.

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“…Further the formation of a transparent conductive glass based on cadmium or tellurium oxides can be an interesting solution for obtaining heterojunctions [6]. This method has been already developed for polycrystalline CdTe for photovoltaic applications, in order to grow transparent conductive oxides [7,8,9].…”

Section: Introductionmentioning

confidence: 99%