Electrical Properties of Anisotype ZnO/ZnSe Heterojunctions

Electrical and photoelectrical properties of photosensitive heterojunctions n-TiO2/p-CdTe

“…According to the analysis of the energy-band diagram [8] one can conclude that the main current mechanism for this kind of heterojunctions is generation-recombination processes within the depletion region via the deep levels located in the vicinity of the CdTe midgap. However, the conditions of the charge carrier's transport through the n-TiO 2 /p-CdTe heterojunctions under consideration are complicated by the relatively high concentration of the surface states at the TiO 2 /CdTe interface, which can play a role of the traps of charge carriers or recombination centers as well as participate in the multistep tunnel-recombination processes [26,27].…”

DC current–voltage and impedance spectroscopy characterization of nCdS/pZnTe HJ

“…Since the lattice constants of CdS and ZnTe differ by about 10%, this leads to the formation of broken bonds (surface states). It is well known 15 , that the concentration of mismatch dislocation is usually estimated as N ss ~ x −2 in the first approximation are found to be equal to N ss ~ 1/ x 2 ~ 6.12∙10 13 cm −2 , where x- the distance between the dislocations calculated as the difference of the two lattice constants values of the components of the HJ, a CdS = 4.130 Å and a ZnTe = 6.110 Å, divide by the average value of these two lattice constants. The high concentration of interface defects plays a role in carriers trapping or recombination, affecting the electric current transport mechanism.…”

Photosensitive anisotype n-ZnSe/p-InSe and n-ZnSe/p-GaSe heterojunctions

“…In particu lar, considerable attention is being given to new ZnSe photodiodes and to their electrical and photovoltaic properties [20][21][22][23][24].…”