The Nano-Memory Devices of a Single Wall and Peapod Structural Carbon Nanotube Field Effect Transistor

Lee, C. H.; Kang, Kyungnam; Park, Kyusung; Kim, M. S.; Kim, H. S.; Kim, H. G.; Fischer, J. E.; Johnson, A. T. Charlie

doi:10.1143/jjap.42.5392

Cited by 23 publications

(11 citation statements)

References 8 publications

(6 reference statements)

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“…Both of the commonly used methods at present can not meet the demands of large scale integration. Moreover, some stability issues are still under investigations, such as hysteresis, 56,57,58 CNT/metal interface 33,34,53 and so on. The author explained the memory effect by charge storage in the dielectric layer just below the SWNT channel.…”

Section: Various Cnt-related Devices Based On Fet Geometrymentioning

confidence: 99%

Charge storage and transport in single-walled carbon nanotube field-effect transistors

Li¹

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This thesis presents the main findings achieved during my PhD project on electron transport properties of carbnno nanotues (CNTs) and CNT based electronic devices. It consists of two parts: (1) hysteresis effects in CNT field-effect transistors (CNTFETs) and (2) single-electron/hole transport properties in CNTFETs. Hysteresis in our CNTFETs is caused by charge trapping around the single-walled CNT (SWNT)-channel. First of all, the thermally activated charge trapping/detrapping processes are studied through the temperature dependence of hysteresis window. The hysteresis window size is reduced by > 50% when temperature is decreased from 295 to 16 K because thermally activated charge hopping into and out of the trapping centers is suppressed at low temperatures. Secondly, the sources of trapping centers are found to be the foreign species absorbed around the SWNT-channel, such as surfactants, impurities, traps in bottom gate oxide, water molecules and even ammonia molecules, etc. Thirdly, a technique for eliminating hysteresis has been developed. Annealing process (300 °C) in vacuum followed by Si 3 N 4 and SiO 2 passivation is found to be an efficient way. Hysteresis-free devices are obtained after passivation at 300 o C because the surface water and surfactant molecules desorb at this temperature in vacuum. However, new traps may locate at the dielectric/SWNT interface and the bulk of the low-density dielectrics (deposited by a PECVD). Lastly, the influences of trapped charges in Si 3 N 4 have been investigated. Through applying voltage pulses to a global back-gate and a local top-gate, ATTENTION: The Singapore Copyright Act applies to the use of this document. Nanyang Technological University Library xv "globally" and "locally" distributed pre-trapped charges near the CNT-channel can be induced, respectively. The locally pre-trapped holes and electrons keep the CNT channel at "ON" and "OFF" states for the top-gate sweeping, respectively. Therefore, the trapped charges in the source/drain contact regions and SWNT-body could effectively influence the channel conductance through the "Schottky barrier modulation" and "bulk switching", respectively. Single-electron/hole transports with the Coulomb blockade effects are studied using three types of CNT-based electronic devices. In the first type, significant Coulomb oscillations are found in specially constructed CNTFETs that consist of long SWNTs bridging the source/drain electrodes and short SWNTs attached to the source/drain contacts. The oscillation peaks fade away gradually with increasing temperatures up to 70 K. The I DS contour plot in the V DS-V GS plane shows "diamond"-shaped current forbidden regions at 15 K. In the second type of the devices, short-SWNT channel (< 100 nm) FETs with asymmetric drain and source contacts are fabricated with a self-alignment technique. The Coulomb oscillation peaks superimposed on the transfer curves of an n-type CNTFET (on/off ratio ~ 10 7) are observed up to 100 K. The activation energy at the Al/SWNT contact is found to be sm...

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Section: Various Cnt-related Devices Based On Fet Geometrymentioning

confidence: 99%

Charge storage and transport in single-walled carbon nanotube field-effect transistors

Li¹

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“…In the POM@SWCNT heterostructure, electrons were transferred from SWCNTs to POM clusters, and hybrid materials formed spontaneously in an aqueous solution. Furthermore, many functional metalorganic clusters were also filled inside the CNTs to investigate new nanodevices, such as a spin valve [96] or memory device [97] .…”

Section: Organic and Metal-organic Molecule Clustermentioning

confidence: 99%

Filled carbon-nanotube heterostructures: from synthesis to application

2023

Microstructures

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Carbon nanotubes (CNTs) have a one-dimensional (1D) hollow tubular structure formed by graphene curling with remarkable electronic, optical, mechanical, and thermal properties. Except for the applications based on their intrinsic properties, such as electronic devices, THz sensors, and conductive fiber, CNTs can also act as nanovessels for nano-chemical reactions and hosts for encapsulating various materials to form heterostructures. In this review, we have summarized the research status on filled carbon-nanotube heterostructures from four aspects: synthesis, morphological and electronic structure analysis, potential applications, and perspective. We begin with an overview of the filling methods and mechanisms of the 1D heterostructures. Following that, we discuss their properties in terms of morphological and electronic structure. The burgeoning applications of 1D heterostructures in nano-electronic, energy, storage, catalysis, and other fields are then thoroughly overviewed. Finally, we offer a brief perspective on the possible opportunities and challenges of filled CNTs heterostructures.

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“…They can also serve as chemical precursors for double-walled CNTs [172], another emerging class of materials that offers functionality beyond that of SWCNTs [173]. Diverse applications of carbon peapods in molecular optoelectronics and nanomechanics have been proposed, including single-electron transistors and charge-storage memory devices [174,175], spin-qubit arrays for quantum computing [176,177], nanoscale lasers [178], nanorelays and sensors [100,164,179].…”

Section: One-dimensional Systemsmentioning

confidence: 99%

Synergy of physical properties of low-dimensional carbon-based systems for nanoscale device design

Poklonski¹,

Вырко²,

Siahlo³

et al. 2019

Mater. Res. Express

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We review the principles of formation, physical properties, and current or envisaged applications for a wide range of carbon allotropic forms. We discuss experimental and theoretical advances relating to staple zero-, one-, and two-dimensional carbon structures, such as fullerenes, carbon nanotubes, and graphene. In addition we emphasize research on emerging carbon allotropes (carbon nanoscrolls, funnels, etc) that result from combining or deforming allotropic forms with well-defined dimensionality. Such materials fall in-between clearly delineated dimensional categories and consequently exhibit unique characteristics that are promising for electronic, optical, and mechanical applications. We also consider other approaches to tuning properties of carbon-based materials, such as chemical functionalization, intentional introduction of structural disorder, and placement of guest atoms or molecules inside hollow structures. Finally, we discuss the properties of and experimental methods for studying zero-dimensional systems (paramagnetic nitrogen impurity atoms) in diamond matrix. The review emphasizes the interplay between the various material properties of carbon-based nanostructures and the designs for nanoscale devices that rely on synergistic combinations of these properties. For example, an electromechanical vibrator, a strain sensor, a nanodynamometer, and a nanoelectromechanical memory cell that we describe exploit both electronic and nanomechanical properties of low-dimensional carbon structures, a reed switch and a magnetic field sensor use magnetic and nanomechanical properties, a maser based on nitrogen-doped diamond uses thermal and optoelectronic properties, etc. All presented device concepts have been validated by calculations, and some have been implemented experimentally.

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The Nano-Memory Devices of a Single Wall and Peapod Structural Carbon Nanotube Field Effect Transistor

Cited by 23 publications

References 8 publications

Charge storage and transport in single-walled carbon nanotube field-effect transistors

Charge storage and transport in single-walled carbon nanotube field-effect transistors

Filled carbon-nanotube heterostructures: from synthesis to application

Synergy of physical properties of low-dimensional carbon-based systems for nanoscale device design

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