The Multiscale Paradigm in Electronic Device Simulation

Maur, Matthias Auf der; Penazzi, Gabriele; Romano, Giuseppe; Sacconi, F.; Pecchia, Alessandro; Carlo, Aldo Di

doi:10.1109/ted.2011.2114666

Cited by 102 publications

(58 citation statements)

References 33 publications

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“…Equation (1) is discretized by means of the zeroth-order discontinuous Galerkin method, which is formally equivalent to the finite volume method, usually employed for discretization of the PBTE [26,27]. Calculations are based on a module developed within the TiberCAD platform [13,14]. For details related to the numerical implementation of (1), refer to [23].…”

Section: Modelmentioning

confidence: 99%

“…We found that the PTC can be lowered by either decreasing the pore spacing or increasing the pore size, according to MDs results [11]. The model has been discretized by means of the Discontinuous Galerkin method and integrated in the platform tool for multiscale modeling TiberCAD [13,14]. This will foster the combined modeling of heat and electrical transport, in order to provide an effective optimization of the figure of merit ZT.…”

Section: Introductionmentioning

confidence: 99%

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Mesoscale modeling of phononic thermal conductivity of porous Si: interplay between porosity, morphology and surface roughness

2012

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In this work we compute the effective thermal conductivity of porous Si by means of the phonon Boltzmann transport equation. Simulations of heat transport across aligned square pores reveal that the thermal conductivity can be decreased either by increasing the pore size or decreasing the pore spacing. Furthermore, by including the surface specularity parameter we show that the roughness of the pore walls plays an important role when the pore size is comparable with the phonon mean free path, because to the increase in the surface-to-volume ratio. Thanks to these results, in qualitatively agreement with those obtained with Molecular Dynamics simulations, we gained insights into the scaling of thermal properties of porous materials and interplay between disorder at different length scales. The model, being based on a flexible multiscale finite element context, can be easily integrated with electrical transport models, in order to optimize the figure of merit ZT of thermoelectric devices

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Section: Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Mesoscale modeling of phononic thermal conductivity of porous Si: interplay between porosity, morphology and surface roughness

2012

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“…Our group has developed a model to simulate the electrical behavior of the cell within the TiberCAD software. TiberCAD is a multiscale numerical tool for electronic and optoelectronic device simulations [20,[49][50][51]. The modelling of a DSC requires to handle the transport of several charge carriers (iodide, triiodide, cation ions and electrons) coupled with Poisson equation for the electrical potential.…”

Section: Model Of a Dsc Using Finite Element Methodsmentioning

confidence: 99%

Simulation of dye solar cells: through and beyond one dimension

et al. 2011

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In this work we present a Computer Aided Design (CAD) software, called TiberCAD, to simulate Dye Sensitized Solar Cells (DSC). DSCs are particularly interesting devices due to their high efficiency (more than 11% on small area and 8% on large area) and long stability. Since their first development, much progress has been made in terms of efficiency, stability, lifespan and engineering of the device. However, the field of DSCs still lacks a complete model able to simulate the entire device over a general domain including all its components. In our model a driftdiffusion set of equations for the different charge carriers coupled to Poisson equation has been implemented within finite element method. The model takes into account also trap assisted transport for electrons in the mesoporous titanium dioxide with a phenomenological model derived from multi-trapping model.Three different applications of the code in 1, 2 and 3D are presented. The first 1D simulation is a study of correlation between physical parameters of the cell and energy conversion efficiency. A second application, 2D, discusses the effect on density and current distributions for different contacting of the cell and loss induced by the shadowing of metallic fingers. Finally, the third case, 3D, presents two different and innovative topologies for a DSC. A cell where contacts and illumination surface are completely decoupled and a DSC wrapped around an optical fiber.

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“…For a consistent treatment of transport via localized and extended states, one needs to resort to an atomistic description of the electronic structure [19]. Finally, the mesoscopic approach needs to be embedded in a macroscopic description of the extended device via coupling to the drift-diffusion transport picture in a concurrent multiscale framework [20]. …”

Section: Mesoscopic Carrier Dynamicsmentioning

confidence: 99%

Towards a Multi-scale Approach to the Simulation of Silicon Hetero-junction Solar Cells

Aeberhard¹,

Czaja²,

Ermes³

et al. 2016

JGE

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The silicon hetero-junction (SHJ) technology holds the current efficiency record of 25.6% for silicon-based single junction solar cells and shows great potential to become a future industrial standard for high-efficiency crystalline silicon (c-Si) cells. One of the main advantages of this concept over other wafer based silicon technologies are the very high open-circuit voltages that can be achieved thanks to the passivation of contacts by thin films of hydrogenated amorphous silicon (a-Si:H). The a-Si:H/c-Si interface, while central to the technology, is still not fully understood in terms of transport and recombination across this nanoscale region, especially concerning the role of the different localized tail and defect states in the a-Si:H and at the a-Si:H/c-Si interface and of the band offsets and band bending induced by the heterostructure potential and the large doping, respectively. For instance, a consistent microscopic picture of transport and recombination processes with treatment of thermal and tunneling mechanisms on equal footing is lacking. On the other hand, there are new SHJ device architectures like thin wafers with light trapping structures [1] or interdigitated back contact (IBC) cells [2], which define additional requirements for the modelling approach concerning the integration of 3D

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The Multiscale Paradigm in Electronic Device Simulation

Cited by 102 publications

References 33 publications

Mesoscale modeling of phononic thermal conductivity of porous Si: interplay between porosity, morphology and surface roughness

Mesoscale modeling of phononic thermal conductivity of porous Si: interplay between porosity, morphology and surface roughness

Simulation of dye solar cells: through and beyond one dimension

Towards a Multi-scale Approach to the Simulation of Silicon Hetero-junction Solar Cells

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