The mott lecture. Structural and electronic properties of amorphous SiGe:H alloys

Doping of GaN1−xAsx with high As content

“…a-Si photovoltaic technology has since advanced by taking advantage of a range of band gaps accessible through alloying with germanium or carbon 4,5 . Alloying of a-Si has led to multi-junction solar cells with somewhat higher efficiencies, but it also causes reduced electrical performance due to higher defect densities 6,7 . The poor conductivity and the limited bandgap range of a-Si alloys severely hinder the widespread applications of a-Si alloys despite their potential advantages of lower cost and ability to deposit on flexible substrates.…”

Microstructure of amorphous-silicon-based solar cell materials by small-angle x-ray scattering. Annual subcontract report, 6 April 1994--5 April 1995

“…A recent review discusses the universally observed problem of the degradation of opto-elecronic properties of a-Si I,,Ge,:H with increasing x [42]. As previously documented [16], Ge alloying above a fraction of about x d .…”

Identifying electronic properties relevant to improving the performance and stability of amorphous silicon-based mid-gap and low-gap cells: Annual subcontract report, 16 January 1998--15 January 1999

“…21, indicating an exponential increase, by roughly a factor of 300 overall, as x varies from 0 to 1. [29,38,39] Figures 20 and 21 indicate that the 3 series of a-Si,Ge:H samples that my group has investigated (from U. Delaware, Harvard, and Uni-Solar) come very close to being optimized in the sense that they exhibit Urbach tail energies as low as high quality a-Si:H and also quite low deep defect levels overall. One additional indicator that these a-Si,Ge:H alloy samples are optimized is the degree to which they obey the spontaneous bond breaking model of M.…”