The morphology and asymmetric strain relief behaviour of InAs films on GaAs (110) grown by molecular beam epitaxy

Zhang, X.; Pashley, D. W.; Hart, L.; Neave, J.H.; Fawcett, P.N.; Joyce, B. A.

doi:10.1016/0022-0248(93)90179-z

Cited by 45 publications

(19 citation statements)

References 13 publications

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“…5 On the other hand, InAs epitaxy on GaAs͑110͒ and GaAs(111)A remains 2D, i.e., the nucleation of 3D islands is completely suppressed, independent of film thickness. [6][7][8] InAs/GaAs͑110͒ heteroepitaxy has been studied recently by Belk et al who reported experimental measurements of strain relaxation in the epitaxial film and of the resulting film surface morphology based on scanning tunneling microscopy ͑STM͒, reflection high energy electron diffraction ͑RHEED͒, and transmission electron microscopy ͑TEM͒. 7 Specifically, it was found that the biaxial strain in the coherently strained film is relieved first in the ͓11 0͔ direction through formation of edge interfacial MDs and subsequently in the ͓001͔ direction through additional formation of 60°MDs; thus, at high film thicknesses the semicoherent interface is characterized by a fully developed dislocation network of perpendicularly intersecting interfacial MDs.…”

Section: Introductionmentioning

confidence: 97%

Theoretical study of the energetics, strain fields, and semicoherent interface structures in layer-by-layer semiconductor heteroepitaxy

Zepeda-Ruiz

Maroudas

Weinberg

1999

Journal of Applied Physics

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A theoretical analysis based on continuum elasticity theory and atomistic simulations is presented of the interfacial stability with respect to misfit dislocation formation, the strain fields, and the film surface morphology during layer-by-layer semiconductor heteroepitaxy. The strain in the coherently strained films, the energetics of the transition from a coherent to a semicoherent interface consisting of misfit dislocation arrays or networks, the structure of the corresponding semicoherent interfaces, the strain fields associated with different equilibrium states of strain, and the morphological characteristics of the film surfaces are calculated for InAs/GaAs(110) and InAs/GaAs(111)A. The thickness of the epitaxial film is used as the dynamical variable in the analysis. Critical film thicknesses for transition from one equilibrium state of strain to another are computed. The analysis is presented for the more general case of heteroepitaxy on a finite-thickness compliant substrate, while the common case of epitaxy on an infinitely thick substrate is derived as an asymptotic limit of the general case. Continuum elasticity theory is found to describe the atomistic simulation results very well, down to the monolayer-thickness limit. Our theoretical results are discussed in the context of recent experimental data.

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Section: Introductionmentioning

confidence: 97%

Theoretical study of the energetics, strain fields, and semicoherent interface structures in layer-by-layer semiconductor heteroepitaxy

Zepeda-Ruiz

Maroudas

Weinberg

1999

Journal of Applied Physics

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“…This implies that there are some of the zinc-blende GaN grains rotated 5~8° regarding the GaAs substrate. Such tilt may be attributed to the presence of a particular type of misfit defects at the overlayer/GaAs interface, [14][15][16] which were introduced to accommodate the misfit strain. (It is worth noting that for some areas, such spots were split into more than two spots.…”

Section: Methodsmentioning

confidence: 99%

Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy

Bae

Seong

Park

et al. 1999

J. Electron. Mater.

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Detailed transmission electron microscope (TEM) and transmission electron diffraction (TED) examination has been performed on organometallic vapor phase epitaxial GaN layers grown on (001) GaAs substrate to investigate microstructures and phase stability. TED and TEM results exhibit the occurrence of a mixed phase of GaN. The wurtzite (α) phase grains are embedded in the zinc-blende (β) phase matrix. It is shown that there are two types of the wurtzite GaN phase, namely, the epitaxial wurtzite and the tilted wurtzite. The tilted wurtzite grains are rotated some degrees ranging from ~5° to ~35°r egarding the GaAs substrate. A simple model is presented to describe the occurrence of the mixed phases and the two types of the wurtzite phase.

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“…However, substrate surfaces that are oriented in a lower-symmetry plane provide additional freedom and asymmetry. For the case of epitaxy on (011) GaAs, strain states fundamentally different than those obtained on symmetric planes were observed [38,39]. In perovskites, the use of (011) SrTiO 3 (STO) is further motivated by the fact that it lacks the potentially complicating aspect of charge imbalance at interfaces between dissimilar perovskites [40].…”

Section: Epitaxial Strain In Bi 1àx Ca X Mno 3 Filmsmentioning

confidence: 97%

The effect of strain and strain symmetry on the charge-order transition in Bi_0.4Ca_0.6MnO₃films

2008

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The transition to a charge and orbital ordered (CO/OO) state in epitaxial manganite films is strongly influenced by lattice strain. Bi 1Àx Ca x MnO 3 is a particularly interesting material due to its high transition temperature and its relation to other Bi-based materials. Here, we review its properties and show the effects of strain and strain symmetry on Bi 0.4 Ca 0.6 MnO 3 films on SrTiO 3 (STO) and LaAlO 3 substrates with (pseudocubic) (001) and (011) orientations. Transport and magnetization data are compared to four-circle X-ray diffraction and high-resolution Z-contrast scanning transmission microscopy data. We observe the spontaneous formation of single-unit-cell thick, Bi-rich layers only on (001) STO substrates and different defect structures depending on the substrate type and orientation. This shows that the details of epitaxial strain play a role not only at phase transitions, but also during the growth of these materials. Results are compared to those published for other CO/OO manganite films.

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The morphology and asymmetric strain relief behaviour of InAs films on GaAs (110) grown by molecular beam epitaxy

Cited by 45 publications

References 13 publications

Theoretical study of the energetics, strain fields, and semicoherent interface structures in layer-by-layer semiconductor heteroepitaxy

Theoretical study of the energetics, strain fields, and semicoherent interface structures in layer-by-layer semiconductor heteroepitaxy

Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy

The effect of strain and strain symmetry on the charge-order transition in Bi_0.4Ca_0.6MnO₃films

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The morphology and asymmetric strain relief behaviour of InAs films on GaAs (110) grown by molecular beam epitaxy

Cited by 45 publications

References 13 publications

Theoretical study of the energetics, strain fields, and semicoherent interface structures in layer-by-layer semiconductor heteroepitaxy

Theoretical study of the energetics, strain fields, and semicoherent interface structures in layer-by-layer semiconductor heteroepitaxy

Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy

The effect of strain and strain symmetry on the charge-order transition in Bi0.4Ca0.6MnO3films

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The effect of strain and strain symmetry on the charge-order transition in Bi_0.4Ca_0.6MnO₃films