The microstructure of Si surface layers after plasma-immersion He⁺ion implantation and subsequent thermal annealing

Abstract

The structural changes in the surface layer of p-type Cz-Si(001) samples after high-dose low-energy (2 keV) He+plasma-immersion ion implantation and subsequent thermal annealing were studied using a set of complementary methods: high-resolution X-ray reflectometry, high-resolution X-ray diffraction, transmission electron microscopy and atomic force microscopy. The formation of a three-layer structure was observed (an amorphous a-SiOxlayer at the surface, an amorphous a-Si layer and a heavily damaged tensile-strained crystalline c-Si layer), which remained after annealing. Helium-filled bubbles were observed in the as-implanted sample. The influence of annealing on the evolution of the three-layer structure and the bubbles is considered. The bubbles are shown to grow after annealing. Their characteristic size is determined to be in the range of 5–20 nm. Large helium-filled bubbles are located in the amorphous a-Si layer. Small bubbles form inside the damaged crystalline Si layer. These bubbles are a major source of tensile strain in the c-Si layer.

X-­ray diagnostics of the structure of near­surface layers of ion­implanted monocrystalline materials

“…In general, in most publications this problem is limited to the phrase "the least squares method has been used" without analyzing the uniqueness of the results obtained. In determining the strain profiles, genetic algorithm [14] and annealing modeling algorithm [15] are also used. These methods allow determining the strain profile even without the "assumption" about its form.…”

Дозовая Зависимость Формирования Нанокристаллов В Имплантированных Гелием Слоях Кремния

“…Аморфный слой образуется на глубине ∼ 20 nm и закрывает пористый кристаллический слой [10], вследствие чего одновременно наблюдаются спектры кристаллического (TO-фонон, ∼ 520 cm −1 ) и аморфного кремния. Спектры КРС аморфного кремния отражают колебательную плотность состояний с широкими полосами TA (∼ 150 cm −1 ) и TO (∼ 480 cm −1 ) (рис.…”

Introduction to the special issue on high-resolution X-ray diffraction and imaging

“…The manuscripts have been subject to standard peer review according to the usual practice of the journal. The topics of the published articles cover the broad spectrum of problems discussed during the conference, highlighting in particular four specific X-ray techniques: X-ray Bragg diffraction, small-angle scattering and reflectivity, X-ray diffraction imaging, and coherent (phase-sensitive) X-ray imaging.(i) In the Bragg diffraction group, the articles are devoted to high-resolution diffraction from thin layers (Barchuk et al, 2017;Borcha et al, 2017;Lomov et al, 2017), to diffraction from surface acoustic waves (Vadilonga et al, 2017), to diffraction from protein crystals (Morelhã o et al, 2017) and to X-ray diffraction theory (Scardi et al, 2017; Lobach et al, 2017).(ii) Small-angle scattering is represented by two articles, dealing with ultra-small-angle scattering from precipitates in metallic alloys (Andrews et al, 2017) and X-ray reflection imaging (Jiang et al, 2017).(iii) The X-ray diffraction imaging papers present the application of X-ray topography techniques to various types of samples, such as silicon dies in integrated circuit packages (Tanner et al, 2017), synthetic diamond crystals (Tranh Thi et al, 2017) and subsurface layers in semiconductor epitaxial layers (Swiatek et al, 2017), as well as a report on how …”

“…(i) In the Bragg diffraction group, the articles are devoted to high-resolution diffraction from thin layers (Barchuk et al, 2017;Borcha et al, 2017;Lomov et al, 2017), to diffraction from surface acoustic waves (Vadilonga et al, 2017), to diffraction from protein crystals (Morelhã o et al, 2017) and to X-ray diffraction theory (Scardi et al, 2017; Lobach et al, 2017).…”