The microstructure and thermal stability of CBE grown heavily carbon doped GaAs

Structures, Energetics and Electronic Properties of Complex III—V Semiconductor Systems

“…Hence it possible to create carbon-doped regions with very abrupt p±n boundaries which do not degrade over time. Unfortunately, the advantage which carbon has is lost when the concentration rises above [C] % 5 Â 10 19 cm À3 [61]. In secondary ion mass spectrometry (SIMS) and microstructural studies the smearing of a carbon-doped region with initially sharp boundaries was observed [62].…”

Di-Carbon Defects in Annealed Highly Carbon Doped GaAs

“…It was later proposed that the introduction of interstitial hydrogen atoms might play a role [4] since they passivate the C As acceptors [3] and the H-C As pairs reduce the lattice contraction [5]. However, highly doped GaAs grown by chemical beam epitaxy (CBE) containing a negligible concentration of hydrogen also shows high temperature instability [6]; this proposal is also clearly incorrect.…”

Raman scattering observations andab initiomodels of dicarbon complexes in AlAs

“…2͒ but electrically inactive defects, such as clusters, form if the heat treatment is extended. 3 The existence of C-C pairs in annealed epilayers was later demonstrated by Raman scattering measurements made on GaAs samples that contained both 12 C and 13 C isotopes: two triplet structures (T1 and T2) were observed, which were attributed to different C-C complexes. 4 Consistent with these observations, this study also revealed a loss of substitutional carbon.…”