2015
DOI: 10.1016/j.diamond.2014.10.007
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The microstructural evolution of ultrananocrystalline diamond films due to P ion implantation and annealing process-dosage effect

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Cited by 8 publications
(9 citation statements)
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“…High‐resolution image of tiny grains showing identical features as in Figure C was captured from another location of the film, which is shown in Figure S4. The gap between the two tiny grains, which were developed in structure of smooth elements, labelled by (2) in Figure S4 indicating a canal‐like channel and referred to “graphitic filament.” In the deposition chamber, travelling photons of suitable wavelength further shape structures of smooth elements of such tiny grains by means of aligning states of perturbed (misaligned) electrons of their elongated atoms resulting into provide uniform inter‐state electron gap for propagation of photons having characteristic of current.…”
Section: Resultsmentioning
confidence: 99%
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“…High‐resolution image of tiny grains showing identical features as in Figure C was captured from another location of the film, which is shown in Figure S4. The gap between the two tiny grains, which were developed in structure of smooth elements, labelled by (2) in Figure S4 indicating a canal‐like channel and referred to “graphitic filament.” In the deposition chamber, travelling photons of suitable wavelength further shape structures of smooth elements of such tiny grains by means of aligning states of perturbed (misaligned) electrons of their elongated atoms resulting into provide uniform inter‐state electron gap for propagation of photons having characteristic of current.…”
Section: Resultsmentioning
confidence: 99%
“…Improvement in the conductivity but not EFE of P-ions incorporated-UNCD films was due to the transportation of electrons crossing interface [33]. Transportation of electrons is the prime reason for enhanced conductivity and field emission of doped films [34].…”
Section: Introductionmentioning
confidence: 97%
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“…The compressive stress released thereby leads to higher carrier concentration which also leads to lowering of the Hall mobility. In a different study on phosphorus implanted UNCD films, it was found that for an implantation dosage of >10 14 ions cm −2 succeeded by 30 min annealing of the samples at 800 • C decreased the electrical resistivity but surprisingly did not improve the FEE behavior [48,49]. At around 300 nm below the surface of the film where the implanted phosphorus ions reside the granular structure gets altered, the diamond grains coalesce and nanographitic clusters form channels for charge carrier transport.…”
Section: Ion Implantation Of Nitrogen and Other Non-metallic Species ...mentioning
confidence: 99%
“…Ion implantation is a possible way to alter the electrical properties of materials through doping with a wide variety of dopant species. By proper selection of the implantation energy and dose, the sp 2 /sp 3 ratio of diamond and the related carbon materials can be tailored. , The sp 2 -bonded carbon induced during the ion implantation and postannealing treatments of NCD films is the “conductivity promoter”, which enables the electrons to move freely inside the films. Lately, numerous reports affirmed that N, O, P, Cu, Au, and Pt ions implanted into diamond can considerably increase the electrical conductivity and FEE properties of diamond materials. However, these ions are too large to substitutionally replace C atoms and act as electron donors. Lithium is also an interesting element to be implanted into diamond, as lithium is predicted to be able to occupy the interstitial sites of diamond as a potential shallow donor .…”
Section: Introductionmentioning
confidence: 99%