The metal-semiconductor transition in amorphous Si1-xCrxfilms. II. Range of validity of the scaling behaviour of the conductivity,  (T,x)=  (T/T0(x)), in the semiconducting region and determination of the minimum metallic conductivity from  (T,x) in the metallic region

Möbius, A.; Vinzelberg, H.; Gladun, C.; Heinrich, A.; Elefant, D.; Schumann, J.; Zies, G.

doi:10.1088/0022-3719/18/17/011

Cited by 61 publications

(80 citation statements)

References 26 publications

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“…The question arises why a minimum metallic conductivity was found in a-Si 1−x Ni x , and previously in a-Si 1−x Cr x [29][30][31][32][33], but not in many of the other substances, e.g. crystalline Si:P, investigated so far.…”

Section: Discussionmentioning

confidence: 99%

“…It is likely that its origin is the same as in a-Si 1−x Cr x [30,32], see also Fig. 9, heavily doped crystalline Si:P [70], and Ge:Sb [71], that means probably some interplay of electron-electron interaction and disorder.…”

Section: Differences Between the Two Seriesmentioning

confidence: 96%

“…E.g. such contributions were observed in a-Si 1−x Cr x [30], as well as in heavily doped crystalline Si:P [70] and Ge:Sb [71]. It remains an open question whether the missing of this contribution in the B samples is real, or whether this contribution is obscured in set B by the low-T part of the high-T contribution.…”

Section: Differences Between the Two Seriesmentioning

confidence: 99%

“…The logarithmic derivative is also helpful in identifying the physical mechanisms involved [29,30,65] since it makes characteristic features of σ(T ) visible, which are not obvious from σ(T ) itself. An additional advantage of this quantity is that it is not influenced by geometrical errors, nor by the scaling of the resistivity mentioned above.…”

Section: B the Logarithmic Derivativementioning

confidence: 99%

“…1 and 7 of Ref. [30]. Samples γ, δ, and ε, have a Cr content of 11, 14, and 19 at%, respectively, obtained by EDX [30].…”

Section: Figmentioning

confidence: 99%

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Metal-insulator transition in amorphousSi1−xNix:Evidence for Mott’s minimum metallic conductivity

et al. 1999

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We study the metal-insulator transition in two sets of amorphous Si 1−x Ni x films. The sets were prepared by different, electron-beam-evaporation-based technologies: evaporation of the alloy, and gradient deposition from separate Ni and Si crucibles. The characterization included electron and scanning tunneling microscopy, glow discharge optical emission spectroscopy, energy dispersive X-ray analysis, and Rutherford back scattering. Investigating the logarithmic temperature derivative of the conductivity, w = d ln σ/d ln T , we observe that, for insulating samples, w(T ) shows a minimum, increasing at both low and high T . Both the minimum value of w and the corresponding temperature seem to tend to zero as the transition is approached. The analysis of this feature of w(T, x) leads to the conclusion that the transition in Si 1−x Ni x is very likely discontinuous at zero temperature in agreement with Mott's original views. 71.30.+h,71.23.Cq, Typeset using REVT E X

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Section: Discussionmentioning

confidence: 99%

Section: Differences Between the Two Seriesmentioning

confidence: 96%

Section: Differences Between the Two Seriesmentioning

confidence: 99%

Section: B the Logarithmic Derivativementioning

confidence: 99%

“…1 and 7 of Ref. [30]. Samples γ, δ, and ε, have a Cr content of 11, 14, and 19 at%, respectively, obtained by EDX [30].…”

Section: Figmentioning

confidence: 99%

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Metal-insulator transition in amorphousSi1−xNix:Evidence for Mott’s minimum metallic conductivity

et al. 1999

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Variable‐Range Hopping in Neutron‐Transmutation‐Doped Gallium Arsenide

Rentzsch¹,

Friedland²,

Ionov

et al. 1986

Physica Status Solidi (b)

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R. R.ENTZSCH e t al. : Hopping in Keutron-Transmutatim-Doped Gallium Arsenide 691 phys. stat. sol. (b) 137, 691 (1986) First investigations are reported on the temperature dependence of the dc-conductivity a t T = = 0.05 to 300 K on neutron-transmutation-doped (NTD) n-GaAs in the vicinity of the metalinsulator transition (MIT). At a medium compensation of K = 0.60 to 0.77 the MIT takes place a t the critical electron concentration of nc = 2.3 X lOla ~m -~. On the dielectric side of the MIT in the variable-range hopping regime (VRH) a t T 5 10 K the conductivity obeys the equation

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Modifications of the hopping conductivity due to long‐range coulomb interactions

Goedsche

1987

Physica Status Solidi (b)

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The conductivity law derived by Efros and Shklovskii for variable-range hopping (VRH) in the presence of long-range Coulomb interaction is modified to take into account new numerical results for the density of single-particle states (DOS) within the Coulomb gap. The characteristic temperatures appearing in this modified VRH law, including limiting temperatures for the applicability of VRH, are expressed in terms of DOS parameters, localization length and dielectric constant. The results are compared with experimental studies in crystalline and amorphous semiconductors.Das von Efros und Shklovskii fur Variable-Range-Hopping (VRH) in Anwesenheit langreichweitiger Coulomb-Wechselwirkung abgeleitete Leitfahigkeitsgesetz wird unter Beriicksichtigung neuer numerischer Ergebnisse fur die Einteilchenzustandsdichte im Coulomb-Gap modifiziert. Die im modifizierten VRH-Gesetz auftretenden charakteristischen Temperaturen, einscbliel3lich die Grenztemperaturen fur die Anwendbarkeit von VRH, werden als Funktionen der Zustandsdichteparameter, der Lokalisationsliinge und der Dielektrizitatskonstante abgeschktzt. Ein Vergleich mit experimentellen Untersuchungen an kristallinen und amorphen Halbleitern wird durchgefiihrt.

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The metal-semiconductor transition in amorphous Si_1-xCr_xfilms. II. Range of validity of the scaling behaviour of the conductivity, (T,x)= (T/T₀(x)), in the semiconducting region and determination of the minimum metallic conductivity from (T,x) in the metallic region

Cited by 61 publications

References 26 publications

Metal-insulator transition in amorphousSi1−xNix:Evidence for Mott’s minimum metallic conductivity

Metal-insulator transition in amorphousSi1−xNix:Evidence for Mott’s minimum metallic conductivity

Variable‐Range Hopping in Neutron‐Transmutation‐Doped Gallium Arsenide

Modifications of the hopping conductivity due to long‐range coulomb interactions

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