The Mechanism of Ni-Assisted GaN Nanowire Growth

Maliakkal, Carina B.; Hatui, Nirupam; Bapat, Rudheer; Chalke, Bhagyashree A.; Rahman, Atikur; Bhattacharya, Arnab

doi:10.1021/acs.nanolett.6b03604

Cited by 44 publications

(39 citation statements)

References 41 publications

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“…This is because, as reported in the literature, gallium vapour concentration decreases with increase in the precursor-to-substrate distance, resulting in shortage or improper supply of gallium species. The results obtained are in good agreement with the literature 40 .…”

Section: Surface Morphology Analysissupporting

confidence: 92%

Fabrication of gallium nitride and nitrogen doped single layer graphene hybrid heterostructures for high performance photodetectors

Sankaranarayanan

Palanivelu

Ramesh

et al. 2020

Sci Rep

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Gallium nitride (Gan) was epitaxially grown on nitrogen doped single layer graphene (n-SLG) substrates using chemical vapour deposition (cVD) technique. the results obtained using x-ray diffractometer (XRD) revealed the hexagonal crystal structure of GaN. Photoluminescence (PL) spectroscopy, energy dispersive x-ray (EDX) spectroscopy and x-ray photoelectron (XPS) spectroscopy revealed traces of oxygen, carbon and nitrogen occurring either as contamination or as an effect of doping during the GaN growth process. In addition, PL revealed a weak yellow luminescence peak in all the samples due to the presence of N-SLG. From the obtained results it was evident that, presence of n-SLG underneath Gan helped in improving the material properties. it was seen from the currentvoltage (i-V) response that the barrier height estimated is in good agreement with the Schottky-Mott model, while the ideality factor is close to unity, emphasizing that there are no surface and interface related inhomogeneity in the samples. the photodetector fabricated with this material exhibit high device performances in terms of carrier mobility, sensitivity, responsivity and detectivity. The hall measurement values clearly portray that, the GaN thus grown possess high electron contents which was beneficial in attaining extraordinary device performance. The fascinating properties of gallium nitride (GaN) such as wide direct band gap nature, ability to tune the band gap, high breakdown voltage, carrier mobility and chemical stability, make GaN a widely explored semiconductor material. The ability to operate at high power, high frequency and tolerance towards harsh environments is also a reason for preferring GaN 1-8. Conventionally, GaN is epitaxially grown using metal organic chemical vapour deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapour phase vapour epitaxy (HVPE) and chemical vapour deposition (CVD) techniques 9-12. It is worth to note that GaN is still being epitaxially grown on foreign substrates such as silicon (Si), sapphire (Al 2 O 3) and silicon carbide (SiC). Sapphire is conventionally preferred as the substrate material due to its hexagonal crystal structure, availability in high crystalline quality and large area. But, due to the thermal and lattice variations between sapphire substrates and GaN, the aforesaid material properties of GaN cannot be achieved effectively. Also, poor thermal conductivity of sapphire restricts the usage of GaN in high power and optoelectronic devices 13-23. To overcome these deficiencies, it is beneficial to utilize graphene as an intermediate layer for the growth of GaN. Graphene, a two-dimensional (2D) material with a planar honeycomb like configuration of sp 2 hybridized carbon atoms, has attracted enormous interest for use in various optical and electronic device applications due to its unique material properties such as high optical transparency, thermal and electrical conductivity and

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Section: Surface Morphology Analysissupporting

confidence: 92%

Fabrication of gallium nitride and nitrogen doped single layer graphene hybrid heterostructures for high performance photodetectors

Sankaranarayanan

Palanivelu

Ramesh

et al. 2020

Sci Rep

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“…As an effect, delay in the supply of reactant species takes place within the pits, thereby decreasing the MW density significantly due to the dominant diffusion induced growth mechanism in this growth regime. 21…”

Section: Results and Discussionmentioning

confidence: 99%

Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition

2019

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Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy, X-ray photoelectron spectroscopy, cathodoluminescence spectroscopy, optical microscopy, atomic force microscopy, and scanning electron microscopy. It was noticed that, in respect of both the substrates, when growth time and/or precursor-to-substrate distance is increased, thickness of the nanowires around the etch pits remains unaltered, but there is variation in the density of nanowires. In addition, formation of gallium nitride microwires within the etch pits was also observed on etched sapphire substrates. Similarly, the thickness and density of the microwires were found to increase with increase in growth time and decrease with increase in precursor-to-substrate distance. The dimensionality scaling of gallium nitride was found to have a positive effect in improving the luminescence property and band gap of the grown nanowires. This method of nanowire growth can be helpful in increasing the probability of multiple reflections in the materials which makes them a suitable candidate for optoelectronic devices.

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“…Both CVD and MOCVD fall in the category of VLS process, involving adatom adsorption, diffusion, and precipitation . Such VLS‐driven growth, in most cases, naturally relies on foreign metal catalysts (namely “seeds”) to initiate the nucleation process . But, the additional step of seed deposition complicates the fabrication process, and the seeds may further introduce unintentional doping or create unexpected defects in nanowires which affect optical and electrical properties .…”

Section: Iii‐nitride Nanowire Photonic Devices Fabricated Directly Onmentioning

confidence: 99%

Recent Advances on III‐Nitride Nanowire Light Emitters on Foreign Substrates – Toward Flexible Photonics

Sun

2018

Physica Status Solidi (a)

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Flexible electronic and photonic devices have received broad interest in the past, due to their compact size, new functionalities, and other merits which devices on rigid substrates do not possess. In this context, the author review recent progresses on flexible III-nitride nanowire photonic devices, focusing on LEDs and lasers. The formation of III-nitride nanowire LEDs and lasers directly on various foreign substrates is firstly described, paving the way to flexible IIInitride nanowire photonic devices through either direct growth on or transfer to flexible substrates. The realization of flexible III-nitride nanowire LEDs through various transfer processes is further detailed. In the end, the challenges of IIInitride nanowire technology for flexible integrated photonics are discussed.

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The Mechanism of Ni-Assisted GaN Nanowire Growth

Cited by 44 publications

References 41 publications

Fabrication of gallium nitride and nitrogen doped single layer graphene hybrid heterostructures for high performance photodetectors

Fabrication of gallium nitride and nitrogen doped single layer graphene hybrid heterostructures for high performance photodetectors

Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition

Recent Advances on III‐Nitride Nanowire Light Emitters on Foreign Substrates – Toward Flexible Photonics

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