The mechanism of alumina formation from TMA and molecular oxygen using catalytic-CVD with an iridium catalyzer

Abstract

The mechanism of alumina formation from tri-methyl aluminum (TMA) and oxygen (O 2 ) using catalytic-chemical vapor deposition (Cat-CVD) with an iridium catalyzer was investigated by quadrupole mass spectrometry (QMS). Above 600 -C, TMA decomposed into Al and CH 3 . Aluminum in the presence of O 2 caused a decrease in O 2 and the creation of alumina on Si crystals. These results imply that O 2 and Al produced AlO as expected. The iridium catalyzer was resistant to oxidation. MIS diodes with 17-nm-thick alumina gates were produced with a hysteresis shift voltage of 0.01 mV and a fixed charge density of 6.7 Â 10 11 cm À 2 .

Detection of radical species produced by catalytic decomposition of H2, O2 and their mixtures on heated Ir surfaces

“…In addition, it was found that the production rate of H atoms decreases rapidly by the introduction of more than 0.3% of O 2 and the co-production of highdensity H and O atoms is rather difficult [2]. On the other hand, Ir has high oxidation durability [3][4][5]. Saito et al have shown that Ir is not oxidized even when it is heated in pure O 2 atmosphere and that Ir catalyzers can be used to prepare SiO 2 films [3].…”

“…Saito et al have shown that Ir is not oxidized even when it is heated in pure O 2 atmosphere and that Ir catalyzers can be used to prepare SiO 2 films [3]. Ogita and Tomita have also used Ir catalyzers to prepare Al 2 O 3 films from Al(CH 3 ) 3 and O 2 [4]. Wuu et al have recently reported that the electrical and optical properties of indium-tin oxide films can be improved by the radical treatment produced by the catalytic decomposition of O 2 on heated Ir catalyzers.…”

The mechanism of alumina formation from TMA and molecular oxygen using Catalytic-CVD with a tungsten catalyzer

“…Diminishing intensity was caused by the oxidation of W filaments. Because the intensity measured using an iridium catalyzer has been reported not to decrease for any temperature to 1000 -C since iridium is resistant to oxidation [11]. Fig.…”

Formation of alumina film using alloy catalyzers in catalytic chemical vapor deposition

“…Therefore, Saito et al suggested adopting iridium (Ir) catalyzer to form SiO 2 films [26]. Alumina films have been successfully formed by Cat-CVD using tri-methyl aluminum (TMA) and O 2 with iridium as the catalyzer material [15,25,[27][28][29]. However, the cost of $1000/m of Ir wire is too expensive to form low cost alumina films.…”