The magnetic, optical, and transport properties of representatives of a class of magnetic semiconductors: The europium chalcogenides

Mauger, A.; Godart, C.

doi:10.1016/0370-1573(86)90139-0

Cited by 437 publications

(445 citation statements)

References 249 publications

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“…On the other hand, experimental results show that the degree of field-ESP observed is much higher than that of photoemission (photo-ESP) [4,5]. In photo-ESP the electrons from 4f 7 states by absorbing a photon transfer to the conduction band.…”

Section: Numerical Resultsmentioning

confidence: 99%

“…Ferromagnetic semiconductors, in particular the Eu chalcogenides, have been of great inter- * E-mail: a-saffarzadeh@cc.sbu.ac.ir est because of their magnetic, optical, and transport properties [4,5]. Tunneling experiments using these materials as barriers demonstrated the spin polarization in the tunnel current by observing the decrease of junction resistance below the Curie temperature (T c ) of the barriers.…”

Section: Introductionmentioning

confidence: 99%

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Spin-polarized tunneling through a thin-film

Saffarzadeh

2000

Physics Letters A

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The effect of spin-disorder scattering on perpendicular transport in a magnetic monolayer is considered within the single-site Coherent Potential Approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated with the use of the sf model. Electron-spin polarization is evaluated in the tunnel current which comes from the different densities of spin-up, spin-down conduction electrons at the Fermi level in a ferromagnetic semiconductor (EuS). Calculated results are compared with some tunneling experiments.

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Section: Numerical Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Spin-polarized tunneling through a thin-film

Saffarzadeh

2000

Physics Letters A

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“…From a magnetic point of view, EuA represents the system of localized magnetic moments of Eu 2 + ions (electron configuration 4f 7 ) coupled by short-range superexchange interactions well described by an isotropic Heisenberg Hamiltonian. The magnetic order observed in EuA depends on lattice parameter (varying for different anions): EuTe is an antiferromagnet, EuSe shows both antiferromagnetic and ferromagnetic order depending on the temperature range and applied magnetic field, and both EuS and EuO are ferromagnets with Curie temperature TC = 16.6 K and TC = 69 K, respectively [7][8][9]. Stoichiometric EuO and EuS are semi-insulating materials.…”

Section: T Storymentioning

confidence: 99%

Semiconductor Ferromagnetic Structures

Story

2000

Acta Phys. Pol. A

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Ferromagnetic semiconductor structures such as superlattices or trilayers form a new class of magnetic systems composed entirely of semiconductor materials. The examples are Ga 1-x Mnx As-AlGaAs with the ferromagnetic layer of GaMnAs semimagnetic (diluted magnetic) semiconductor or EuS-PbS with the ferromagnetic member (EuS) of the family of europium chalcogenides. We discuss the spectrum of perspective ferromagnetic semiconductor materials, the effect of size and stress on magnetic properties of ultrathin semiconductor ferromagnetic layers, and the effect of interlayer exchange in all-semiconductor systems.

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“…Not only does doped EuO exhibit a spin polarization close to 100% due to enormous (~0.6 eV) spin splitting of its conduction band but also it can be conductance-matched with Si by doping with oxygen vacancies or trivalent rare-earth atoms such as Gd, La or Lu [18,[30][31][32][33]. Its Heisenberglike magnetism (7 μ B per Eu 2+ ion) arises from the half-filled 4f states which constitute the top of the valence band [33]. Stoichiometric EuO has a low FM Curie temperature T c of about 69 K, but chemical doping and axial strain can increase T c significantly [32-3 36].…”

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confidence: 99%

Direct Epitaxial Integration of the Ferromagnetic Semiconductor EuO with Silicon for Spintronic Applications

Averyanov

Sadofyev

Tokmachev

et al. 2015

ACS Appl. Mater. Interfaces

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Materials in which charge and spin degrees of freedom interact strongly offer applications known as spintronics. Following a remarkable success of metallic spintronics based on the giant-magnetoresistive effect, tremendous efforts have been invested into the less developed semiconductor spintronics, in particular, with the aim to produce three-terminal spintronic devices, e.g. spin transistors. One of the most important prerequisites for such a technology is an effective injection of spin-polarized carriers from a ferromagnetic semiconductor into a nonmagnetic semiconductor, preferably one of those currently used for industrial applications such as Si -a workhorse of modern electronics. Ferromagnetic semiconductor EuO is long believed to be the best candidate for integration of magnetic semiconductor with Si. Although EuO proved to offer optimal conditions for effective spin injection into silicon and in spite of considerable efforts, the direct epitaxial stabilization of stoichiometric EuO thin films on Si without any buffer layer has not been demonstrated to date. Here we report a new technique for control of EuO/Si interface on submonolayer level which may have general implications for the growth of functional oxides on Si. Using this technique we solve a long-standing problem of direct epitaxial growth on silicon of thin EuO films which exhibit structural and magnetic properties of EuO bulk material. This result opens up new possibilities in developing all-semiconductor spintronic devices.Modern information technology is based on the fundamental dichotomy: it utilizes charge of electrons to process information in semiconductors and their spin to store information in magnetic materials. Strong correlation of spin and charge degrees of freedom in the same material makes it possible to manipulate magnetically stored information with electric fields and/or modify fast logic gates by changing the magnetisation of their components. In metal multilayers, such effects are manifest in giant magnetoresistance, where the orientations of the macroscopic magnetisation in adjacent layers determine the electrical resistance of the structure [1,2]. Metallic spintronic devices, such as hard disk read heads and magnetic random access memory are among the most successful technologies of the past decades. However, metals cannot enhance signals -the prerequisite for transistor technology readily offered by semiconductors.The development of semiconductor spintronics requires the ability to inject, modulate and detect spin-polarized carriers in a single device, preferably made of technologically important materials currently used in integrated circuits such as Si or GaAs [3,4]. Thus far, the spin of the carriers has played a minor role in semiconductor devices mainly because Si and GaAs are nonmagnetic. On the other hand, the enhanced spin-related phenomena realized in diluted magnetic semiconductors (DMS) (especially 2 GaMnAs films [5]) open the way for applications in spintronics [6]. The interplay between electrical and magneti...

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The magnetic, optical, and transport properties of representatives of a class of magnetic semiconductors: The europium chalcogenides

Cited by 437 publications

References 249 publications

Spin-polarized tunneling through a thin-film

Spin-polarized tunneling through a thin-film

Semiconductor Ferromagnetic Structures

Direct Epitaxial Integration of the Ferromagnetic Semiconductor EuO with Silicon for Spintronic Applications

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