The location and shape of the conduction band minima in cubic silicon carbide

Dean, P. J.; Choyke, W. J.; Patrick, Lyle

doi:10.1016/0022-2313(77)90030-8

Cited by 77 publications

(4 citation statements)

References 32 publications

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“…These values are larger than the 34-37 meV energy reported by Suzuki et al 6 for N 2 -doped 3C-SiC and obtained from Hall effect measurements over a similar temperature range. However, our values match fairly well with the 53-55 meV nitrogen-bound exciton energy reported by Dean et al 12 from optical measurements.…”

Section: Resultssupporting

confidence: 92%

In Situ N[sub 2]-Doping of SiC Films Grown on Si(111) by Chemical Vapor Deposition from Organosilanes

Chen¹,

Steckl

Lobodab

2000

J. Electrochem. Soc.

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SiC has many superior properties for high power and high frequency electronic devices, such as wide bandgap, high breakdown field, high saturation velocity, and high thermal conductivity. In addition, its high Young's modulus and its toughness, chemical inertness, and radiation resistance make it an excellent material for the fabrication of microelectromechanical systems sensors and controllers operating in extreme environments such as those in turbine engines and nuclear reactors.Among more than 170 SiC polytypes, 6H-, 4H-, and 3C-SiC are the three most commonly used polytypes in the microfabrication of devices. 6H-and 4H-SiC are the best polytypes for power electronic devices due to the rapid improvement in both size and quality of the substrates. 3C-SiC has its own unique features, such as highest electron mobility, isotropy in both mechanical and electrical properties, and no micropipe defects. The major hurdle of 3C-SiC development is the lack of sizable substrate. However, 3C-SiC can be heteroepitaxially grown on Si substrates, which provides a low cost alternative method for obtaining SiC. Currently, chemical vapor deposition (CVD) is widely employed to grow epitaxial SiC on Si. SiC CVD growth normally takes place at relatively high temperatures (ϳ1350ЊC) with an SiH 4 /C 3 H 8 /H 2 gas system. The hazardous nature of these gases requires special handling. We have been pursuing the use of the novel organosilane precursors silacyclobutane (SCB-SiC 3 H 8 ) and trimethylsilane (3MS-SiC 3 H 9 ) as alternative Si and C sources for the growth of 3C-SiC. 1-5 SCB has a strained fourmember ring and 3MS has a sterically hindered structure. These features make them easier to pyrolyze, with a high growth rate. Furthermore, these precursors are nonpyrophoric and noncorrosive, making them safer to handle than silane. Films grown by CVD using SCB or 3MS 3,5 show that crystalline SiC can be obtained on Si(111) at growth temperatures below 1200ЊC. Our previous results show that the chemical and structural properties of SiC films using 3MS or SCB are similar to those grown at higher temperatures using the SiH 4 /C 3 H 8 /H 2 gas system.In this work, the electrical transport properties of in situ N 2 -doped 3C-SiC films grown on Si(111) using SCB or 3MS are investigated by Hall effect measurements and reflection-mode Fourier transform infrared spectroscopy (FTIRS). The electron carrier density and mobility are measured as a function of N 2 flow rate. Reflection-mode FTIRS and secondary-ion mass spectroscopy (SIMS) also were utilized to support Hall effect measurements. The relationship between the Hall mobility and the carrier concentration at 300 K also is presented and compared to previously published data. ExperimentalThe SiC films were grown on 3 in. Si(111) substrates (p-type, 150-300 ⍀-cm, off-axis) using SCB or 3MS at 1200ЊC and 4 Torr. Prior to CVD growth, a thin buffer layer was formed using propane at 1300ЊC and 1 atm to reduce the effects of large lattice mismatch and thermal expansion coefficient difference betwe...

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Section: Resultssupporting

confidence: 92%

In Situ N[sub 2]-Doping of SiC Films Grown on Si(111) by Chemical Vapor Deposition from Organosilanes

Chen¹,

Steckl

Lobodab

2000

J. Electrochem. Soc.

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“…The donor ionization energies in pand afilm were 33 meV and 84 meV, respectively. However, these values are still smaller than those for N determined from PL studies (ED = 54 meV [62], [63] for pand 170 meV [64] for a-Sic, respectively). Finally, Molnar and Kelner [65] have reported differential Hall studies of epitaxial p-S i c layers grown on Si (100) substrates at four different laboratories.…”

Section: Thin Film Growth and Characterizationmentioning

confidence: 59%

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

et al. 1991

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The unique thermal and electronic properties of silicon carbide provide multiplicative combinations of attributes which lead to one of the highest jigures of merit for any semiconductor material for use in high-power,-speed,-temperature,-frequency and radiation hard applications. Structurally, silicon carbide exists in a host of polyiypes, the origins of which are incompletely understood. The continual development of the deposition of silicon carbide thin films and the associated technologies of impurity incorporation, etching, surface chemistry, and electrical contacts have culminated in a host of solid-state devices including field effect transistors capable of operation to 925 K. The results of these several research programs in the United States, Japan and the Soviet Union, and the remaining challenges related to the development of silicon carbide vis a vis microelectronics are presented and discussed in this review.

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“…An early study of the N donor in 3C-SiC demonstrates that the binding energies of p-and s-like states can be deduced from the observation of the so called two-electron transitions in the low-temperature photoluminescence ͑PL͒ spectra. 3 Their values for the electron effective mass and its anisotropy, as well as the N donor ionization energy, differ very little ͑ϳ1%͒ from the same quantities determined in later work more accurately using completely different techniques, cyclotron resonance for the effective masses 4 and far-infrared absorption ͑FIRA͒ for the binding energies of the 1s͑A 1 ͒ and 1s͑E͒ states. 5 The FIRA is the most straightforward method for the determination of the electronic structure of a shallow donor by observation of allowed by symmetry transitions from the ground-state to p-like excited states at low-temperature.…”

Section: Introductionmentioning

confidence: 70%

Ionization energy of the phosphorus donor in 3C–SiC from the donor-acceptor pair emission

Ivanov

Henry

Yan

et al. 2010

Journal of Applied Physics

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Donor-acceptor pair luminescence of P-Al and N-Al pairs in 3C-SiC is analyzed. The structures in the spectra corresponding to recombination of pairs at intermediate distances are fitted with theoretical spectra of type I ͑P-Al pairs͒ and type II ͑N-Al pairs͒. It is shown that in the regions chosen for fitting the line positions obey the equation ប ͑R͒ =E G −E D −E A + e 2 / R, where ប ͑R͒ is the energy of the photon emitted by recombination of a pair at a distance R, e is the electron charge, is the static dielectric constant, and E G , E D , and E A are the electronic band gap and the donor and acceptor ionization energies, respectively. The fits yield the values E G −E D −E A for the N-Al ͑2094 meV͒ and P-Al ͑2100.1 meV͒ cases. Using the known value of the nitrogen ionization energy, 54.2 meV, phosphorus ionization energy of 48.1 meV is obtained. Identification of the sharp lines corresponding to recombination of close pairs in the P-Al spectrum is suggested.

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The location and shape of the conduction band minima in cubic silicon carbide

Cited by 77 publications

References 32 publications

In Situ N[sub 2]-Doping of SiC Films Grown on Si(111) by Chemical Vapor Deposition from Organosilanes

In Situ N[sub 2]-Doping of SiC Films Grown on Si(111) by Chemical Vapor Deposition from Organosilanes

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

Ionization energy of the phosphorus donor in 3C–SiC from the donor-acceptor pair emission

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