The Localized Vibrational Mode of Nitrogen in GaAs

Riede, V.; Neumann, H.; Sobotta, H.; Schwabe, R.; Seifert, Werner; Schwetlick, S.

doi:10.1002/pssa.2210930250

Cited by 18 publications

(5 citation statements)

References 10 publications

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“…On the other hand, it is known that nitrogen-implanted GaAs and nitrogen-doped GaAs layers grown by vapor phase epitaxy show an infrared absorption band at about 470 cm Ϫ1 . 8,9 In a recent Fourier-transform infrared ͑FTIR͒ absorption study it was reported 10 that this band can also be detected in nominally undoped bulk GaAs crystals, where nitrogen is a contamination coming from the N 2 gas or the pyrolithic boron nitride ͑pBN͒ crucible used for crystal growth.…”

Section: ͓S0003-6951͑00͒03247-2͔mentioning

confidence: 99%

Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1−xNx layers

Alt

Egorov

Riechert

et al. 2000

Applied Physics Letters

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Fourier-transform infrared absorption measurements have been carried out in the two-phonon region of GaAs. Implantation of the nitrogen isotopes N14 and N15, respectively, into bulk GaAs shows that a local vibrational mode at 471 cm−1 (14N) is due to isolated nitrogen. The band is also found in GaAs1−xNx(0<x<0.03) layers grown by solid-source molecular beam epitaxy. The strength of the band correlates quantitatively with the decrease of the lattice parameter determined by x-ray diffraction for x<0.01 and can be used for the assessment of the nitrogen fraction incorporated substitutionally on anion lattice sites.

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Section: ͓S0003-6951͑00͒03247-2͔mentioning

confidence: 99%

Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1−xNx layers

Alt

Egorov

Riechert

et al. 2000

Applied Physics Letters

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“…In general, when the alloy composition is very low, the energy discrepancy between the TO and LO modes is negligible, and the two modes converge on the impurity-local-vibration mode. Riede et al [24] has studied the IR absorption spectra of GaAs with N impurities (but not the GaNAs alloy) and reported that the local vibration mode of the N impurities was 470 cm −1 . The peaks labelled E are in good agreement with this result.…”

Section: Optical Phonon Energies In Gainnasmentioning

confidence: 99%

Annealing in GaInNAs system

Kondow

Kitatani

Shirakata

2004

J. Phys.: Condens. Matter

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The effect of post-growth thermal annealing on crystallinity and bandgap in GaInNAs systems is systematically investigated. Annealing greatly improves the crystallinity of GaInNAs and also blue shifts the bandgap. This improved crystallinity is due to the elimination of non-radiative centres, and is not directly related to the blue shift in the bandgap. The blue shift may be closely related to the red shift in the bandgap seen when N is added to GaInNAs; if so, this would provide a clue to the reasons for the red shift in the bandgap of III-N-V alloys. The unexpected behaviour of the bandgap in GaInNAs is investigated by examining the bonds through optical phonons. We have found that the bandgap varies with the strength or length of the GaN bonds in GaInNAs. Annealing changes atomic positions in a unit cell of GaInNAs and thus blue shifts its bandgap.

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“…The band was attributed to substitutional nitrogen, N As . Further work was done on epitaxially grown GaAs:N. Using vapour phase epitaxy with NH 3 added to the carrier gas, nitrogen-doped epitaxial layers of GaAs were grown [9,10]. These layers also show nitrogen-related absorption at about 470 cm −1 .…”

Section: Introductionmentioning

confidence: 99%

Infrared absorption due to local vibrational modes of nitrogen in GaAs:N and GaAs-based dilute nitrides

Alt¹

2004

J. Phys.: Condens. Matter

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This paper reviews recent experimental progress in the investigation of nitrogen in GaAs and GaAs-based dilute nitrides by Fourier transform infrared absorption spectroscopy. Isolated substitutional nitrogen on the anion site gives rise to a local vibrational mode at a wavenumber of 472 cm−1, which can be detected at low temperatures as a sharp absorption band. Based on a comparison with secondary ion mass spectroscopy and x-ray diffraction analysis, a calibration factor is derived for the integrated absorption of the band. Quantitative determination of substitutional nitrogen is possible in epitaxial layers of only 10 nm thickness. The influence of indium–nitrogen bonding on the local mode frequency is discussed. A mode at 490 cm−1 is tentatively attributed to the InGa3N configuration. An additional local vibrational mode occurs at 638 cm−1. A valence-force model is presented, which reproduces quantitatively the experimentally observed host-isotope fine structure. The results are consistent with an assignment to a nitrogen–gallium vacancy complex.

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The Localized Vibrational Mode of Nitrogen in GaAs

Cited by 18 publications

References 10 publications

Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1−xNx layers

Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1−xNx layers

Annealing in GaInNAs system

Infrared absorption due to local vibrational modes of nitrogen in GaAs:N and GaAs-based dilute nitrides

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