The Light Emitting Diodes on the Basis of Fast Electron Irradiated Silicon Carbide

Vodakov, Yu. A.; Girka, Oleksii; Konstantinov, A. O.; Мохов, Е. Н.; Роенков, А. Д.; Svirida, S.V.; Семенов, В. В.; Sokolov, V. I.; Шишкин, А. В.

doi:10.1007/978-3-642-84804-9_55

Cited by 4 publications

(4 citation statements)

References 2 publications

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“…Irradiation of other SiC polytypes gave rise to luminescence with similar properties [52]. Since this luminescence emerged as a result of irradiation or implantation of SiC with various ions, it was assumed that a center acting as the activator of luminescence had either a pure defect-related structure or was a complex which consisted of an intrinsic defect and an atom of a background impurity [58][59][60]. Choyke [61] detected excitons bound to deep-level centers in SiC.…”

Section: Defect-related Luminescencementioning

confidence: 99%

Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films

Lebedev¹

2004

Semiconductors

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Available results of studying the radiation resistance of SiC and developing the nuclear-radiation detectors based on SiC are analyzed. The data on the ionization energies, capture cross sections, and plausible structure of the centers formed in SiC as a result of irradiation with various particles are reported. The effect of irradiation on the charge-carrier concentration and recombination processes is considered. Two aspects are covered in describing the results of designing SiC-based detectors and studying the detector parameters. First, the specific potential of SiC detectors for solving problems in nuclear physics is considered; typical examples of detector applications are given. Second, the relationship between detector characteristics and the properties of the starting material is considered; a number of methods for determining the specific parameters of SiC based on the characteristics of detectors are described. It is concluded that recent progress in the growth of high-quality SiC films (the difference impurity concentration ranges from 3 × 10 14 -3 × 10 15 cm -3 and the density of micropipe defects is no higher than 1 cm -2 ) makes it possible to include SiC in the class of materials that can be used to fabricate advanced nuclear detectors. The technological potential of SiC has been far from exhausted; undoubtedly, various configurations of SiC-based detectors (including multielement configurations) will be developed in the near future. © 2004 MAIK "Nauka/Interperiodica".

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Section: Defect-related Luminescencementioning

confidence: 99%

Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films

Lebedev¹

2004

Semiconductors

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“…The red line in the figure indicates the solubility limit of nitrogen in 4H-SiC. 26) At 2.8 and 3.1 J cm −2 , constant nitrogen diffusion was observed at concentrations of the solubility limit, suggesting liquid-phase diffusion. Therefore, the diffusion observed at a fluence of 2.5 J cm −2 , such that only the surface layer exceeds the solubility limit, is regarded as solid-phase diffusion.…”

Section: Laser Fluence Dependencymentioning

confidence: 99%

Laser doping mechanism of 4H-SiC by KrF excimer laser irradiation using SiNx thin films

Yasunami

Nakamura

Katayama

et al. 2023

Jpn. J. Appl. Phys.

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In this study, nitrogen is doped into 4H-SiC by irradiating 4H-SiC with a SiNx thin film and a KrF excimer laser. The doping depth profile, crystal structure, electrical properties, and surface roughness results are used to evaluate the excimer-laser doping mechanism. High concentration doping was possible at a fluence of 2.5 J/cm² and 10 shots while maintaining the 4H-SiC crystal structure by solid-phase diffusion. However, damage to the 4H-SiC structure was observed by liquid-phase diffusion at a fluence of 2.8 J/cm² or higher. At a fluence of 2.5 J/cm² and 100 shots, nitrogen could be deeply diffused by solid-phase diffusion, but an amorphous layer was formed on the surface and there was an increase in contact resistance.

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“…At a fluence of 2.5 J/cm², nitrogen diffusion was observed at a depth of approximately 30 nm, whereas at fluences of 2.8 and 3.1 J/cm 2 , it was observed at greater depth. The red line indicates the solubility limit of nitrogen in 4H-SiC [26]. At fluences of 2.8 and 3.1 J/cm², constant nitrogen diffusion was observed at the solubility limit concentration, implying liquid phase diffusion.…”

Section: Laser Fluence Dependencymentioning

confidence: 99%

Excimer laser doping for the fabrication of 4H-SiC power devices

Kakimoto

Katayama

Yasunami

et al. 2023

Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVIII

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4H–Silicon carbide (4H-SiC), which is a wide-bandgap semiconductor, is a promising material for high-power, ecofriendly devices owing to its excellent material properties. For the fabrication of SiC power devices, low-resistance ohmic contact must be established at the metal–semiconductor interface, which requires high-concentration impurity doping. In this study, we successfully doped 4H-SiC with high-concentration nitrogen under excimer laser irradiation using SiNx films containing dopants on 4H-SiC. Results indicated that a contact resistance of 10−6 Ωcm2 was obtained. The effects of doping characteristics due to different laser parameters were also investigated.

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The Light Emitting Diodes on the Basis of Fast Electron Irradiated Silicon Carbide

Cited by 4 publications

References 2 publications

Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films

Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films

Laser doping mechanism of 4H-SiC by KrF excimer laser irradiation using SiNx thin films

Excimer laser doping for the fabrication of 4H-SiC power devices

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