The Kinetics of Correlated Annealing of F, I Centres in KBr Crystals

Physica Status Solidi (b)

1995

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Results of computer simulations of the kinetics of correlated annealing of pairs of close a-I and F-I centers in KCI and KBr crystals, enhanced by I-center diffusion and Coulomb or elastic attractions, respectively, are presented. Special attention is paid to the conditions under which multi-stage annealing stages arise as it has been observed experimentally more than once. Our general conclusions are: (i) a weak elastic interaction affects the recombination kinetics and the survival probability even for relatively well-separated F-I pairs, the more so is true for the case of Coulomb attraction between charged a-I pairs; (ii) the multi-step (kink) structure arises only for close (typically, up to fourth-nearest neighbour) defects. To explain the strongly separated stages observed experimentally for a-I (17 to 21 K, 30 to 39 K in KCI and 18 to 22 K and 27 to 30 K in KBr) a very particular initial distribution of defects is required consisting of two groups of close and well-separated defects. It gives strong support to the results of recent computer simulations that an interstitial ion created due to electron trapping by an H center can be transformed into a crowdion which could be displaced athermally by a long distance from a vacancy (five to seven interionic distances).

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Section: Results Of Theoretical Simulationssupporting

confidence: 88%

Section: Results Of Theoretical Simulationsmentioning

confidence: 66%

Section: Results Of Theoretical Simulationsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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Computer Simulations of I‐Center Annealing in KCl and KBr Crystals. Theoretical Interpretation of Thermostimulated Experiments

Eglitis

Physica Status Solidi (b)

1995

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“…These parameters are necessary for the prediction of the kinetics of possible secondary reactions and, in general, material radiation stability. Previous studies performed on KCl and KBr crystals were focused mostly on spatially correlated defect pairs (F-H and α-I) [11,[35][36][37][38], while this paper deals with the recombination kinetics of spatially uncorrelated complementary defect pairs.…”

Section: Ging Of F-h)mentioning

confidence: 99%

Theoretical analysis of the kinetics of low-temperature defect recombination in alkali halide crystals

Kuzovkov

Low Temperature Physics

et al. 2016

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We analyzed carefully the experimental kinetics of the low-temperature diffusion-controlled F, H center recombination in a series of irradiated alkali halides and extracted the migration energies and pre-exponential parameters for the hole H centers. The migration energy for the complementary electronic F centers in NaCl was obtained from the colloid formation kinetics observed above room temperature. The obtained parameters were compared with data available from the literature.

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The kinetics of diffusion-controlled annealing of Frenkel defects in alkali halide crystals

Eglitis

Nuclear Instruments and Methods in Physics Research Section B:

1994