The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

Abstract

Abstract. The A-centers (VO) annealing and transformation of precursors to form stable С i О i defects during these processes are described. It was found the necessity to take into account annihilation of vacancy type defects with the interstitial type mobile defects to describe the annealing of defects. It was shown that the energies of migration for vacancy (V) and interstitial carbon atoms С i that are defined by the degree of their localization in silicon lattice at the temperature close to 550 K are equal and

Specific features of defect formation in the n­Si <P> single crystals at electron irradiation

“…It is known [14] that in the n-Si crystals in the process of irradiation at room temperature, mostly the A-and E-centers form, as well as divacancies (V 2 ), the complexes of…”

“…1 shows absorption spectra for the n-Si single crystals, irradiated by a flux of electrons of 1•10 17 el/cm 2 . The spectra were investigated in the temperature range from 10 K to 300 K. Absorption lines with frequencies of 836 and 885 cm -1 correspond to the A-center (VO i complex) [14]. The properties of this defect have been studied in detail [25].…”