Specific features of defect formation in the n­Si &lt;P&gt; single crystals at electron irradiation

Luniov, S. V.; Zimych, A. I.; Khvyshchun, M. V.; Yevsiuk, Mykola; Maslyuk, V. T.

doi:10.15587/1729-4061.2018.150959

Cited by 4 publications

(10 citation statements)

References 19 publications

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“…5, curves 3 and 4). In this case, the activation energy of the main radiation defects, belonging to the VO i P complexes, decreases slightly and at P>0.4 GPa does not depend on the magnitude of uniaxial pressure [24].…”

Section: Resultsmentioning

confidence: 82%

“…In the previous paper [24], on the basis of measurements of infrared Fourier spectroscopy and the Hall effect, the nature and concentration of the main types of radiation defects formed in silicon single crystals under such conditions of irradiation were determined. It was shown that the main radiation defects were A-centres (VO i complexes), A-centres, modified with impurity of phosphorus (VO i P complexes) and complexes containing interstitial carbon (С і O i complexes).…”

Section: Resultsmentioning

confidence: 99%

“…This is explained by the fact that the phosphorus shallow donors will be fully ionized for the investigated range of temperatures. The deep energy levels and , which belong to VO i and VO i P complexes respectively [24], will be ionized only partially for the irradiated single crystals n−Si. The growth electron concentration with the increasing magnitude of the uniaxial pressure along the crystallographic direction [100] (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The growth electron concentration with the increasing magnitude of the uniaxial pressure along the crystallographic direction [100] (Fig. 5, curves 2 and 5) can be explained with a decrease in the ionization energy of these complexes under the deformation [24], [25]. Only marginal increase in the electron concentration in the conduction band of silicon is observed at uniaxial pressures along the crystallographic direction [111] (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Under uniaxial pressure along the crystallographic direction [100], two minima of silicon conduction band will descend on the energy scale by a value [24]: , (5) and the other four minima will ascend by a value:…”

Section: Theoretical Calculationsmentioning

confidence: 99%

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Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects

Luniov

Lyshuk

Maslyuk

et al. 2019

Latvian Journal of Physics and Technical Sciences

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Temperature dependencies for Hall mobility of electrons for the uniaxially deformed n-Si single crystals, irradiated by the flow of electrons Ω=1·1017 el./cm2 with the energy of 12 MeV, are obtained on the basis of piezo-Hall effect measurements. From the analysis of these dependencies it follows that under the uniaxial pressure (0–0.42) GPa and (0–0.37) GPa along crystallographic directions [100] and [111], respectively, the deformation-induced increase of the Hall mobility has been observed. On the basis of the proposed theoretical model of mobility, this increase is explained by the decrease of the amplitude of a large-scale potential with an increase in the magnitude of uniaxial deformation and, accordingly, the probability of electron scattering on this potential. The slight discrepancy between the obtained experimental results and the relevant theoretical calculations at the low temperatures is due to the fact that the electron scattering on the radiation defects, created by the electron radiation, was not taken into account in the calculations. The decrease in Hall mobility of electrons along with an increase in temperature for unirradiated and irradiated silicon single crystals is explained by the growth of the probability of electron scattering on the optical phonons that are responsible for the intervalley scattering in silicon. The obtained results can be used in designing and modelling on the basis of n-Si single crystals of various electronic devices of micro- and nanoelectronics, which can be subject to the extreme conditions of action of the significant radiation and deformation fields.

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Section: Resultsmentioning

confidence: 82%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Theoretical Calculationsmentioning

confidence: 99%

See 3 more Smart Citations

Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects

Luniov

Lyshuk

Maslyuk

et al. 2019

Latvian Journal of Physics and Technical Sciences

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Enhanced Nanostructure Evolution in Functional Spinel Ceramics through Additional Phases

Klym,

Kostiv,

Hadzaman

et al. 2023

2023 IEEE 13th International Conference on Electronics and Information Technologies (ELIT)

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Tensoelectrical Properties of Electron-Irradiated N-Si Single Crystals

Luniov

Nazarchuk

Maslyuk

2021

EEJP

Self Cite

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Tensoresistance at uniaxial pressure for electron-irradiated n-Si single crystals at room temperature has been studied. Silicon single crystals for research were doped with phosphorus, concentration Nd=2.2·1016 cm-3, and irradiated by the electron flows of 5·1016 el./cm2, 1·1017 el./cm2 and 2·1017 el./cm2 with the energy of 12 MeV. Measurements of tensoresistance and Hall constant were performed for the uniaxially deformed n-Si single crystals along the crystallographic directions [100] and [111]. Mechanisms of tensoresistance for the investigated n-Si single crystals were established based on the measurements of the tenso-Hall effect and infrared Fourier spectroscopy. It is shown that the tensoresistance of such single crystals is determined only by changes in the electron mobility under the deformation. In this case, the electron concentration will not change under the action of uniaxial pressure, because the deep levels of radiation defects belonging to the VOi VOiP complexes will be completely ionized. Ionization of the deep level of EV+0.35 eV, which belongs to the defect of CiOi, under the deformation will not be manifested and will not be affect on the tensoresistance of n-Si. It is established that the anisotropy of electron scattering on the created radiation defects, which occurs at the uniaxial pressure along the crystallographic direction [100], is the cause of different values of the magnitude of tensoresistance of n‑Si single crystals, irradiated by different electron flows. For the case of tensoresistance of the uniaxially deformed n-Si single crystals along the crystallographic direction [111], the dependence of its magnitude on the electron irradiation flow is associated with changes in the screening radius due to an increase in the effective electron mass. For the first time obtained at room temperature the increase of the magnitude of tensoresistance for the n-Si single crystals due to their irradiation by the electron flows of Ω ≥1·1017 el./cm2 can be used in designing high uniaxial pressure sensors based on such n-Si single crystals with the higher value of tensosensitivity coefficient regarding available analogues. Such sensors will have increased radiation resistance and a wide scope of operation.

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Specific features of defect formation in the nSi <P> single crystals at electron irradiation

Cited by 4 publications

References 19 publications

Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects

Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects

Enhanced Nanostructure Evolution in Functional Spinel Ceramics through Additional Phases

Tensoelectrical Properties of Electron-Irradiated N-Si Single Crystals

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Specific features of defect formation in the n­Si <P> single crystals at electron irradiation

Cited by 4 publications

References 19 publications

Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects

Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects

Enhanced Nanostructure Evolution in Functional Spinel Ceramics through Additional Phases

Tensoelectrical Properties of Electron-Irradiated N-Si Single Crystals

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Product

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Specific features of defect formation in the nSi <P> single crystals at electron irradiation