The kinetic aspects of ordering in GaAs1-xSbx grown by organometallic vapor phase epitaxy

Microstructure of ordered nanodomains induced by Bi surfactant in OMVPE-grown GaAsSb

“…CuAu and CH structures have been found using organometallic vapor phase epitaxy (OMVPE) growth and CuPt ordering was found using MBE growth. The substrates were (0 0 1) InP but all had several degrees offcut [4,10]. We have also observed weak three-fold and six-fold ordering along [1 1 0] which correlates with increased bulk resistivity along the [1 1 0] direction in OMVPE-grown GaAsSb [11].…”

Quantitative analysis of variant III CuAu-I-type ordering of AlxGa1−xAs on (110), (111)A and (001) GaAs substrates using X-ray diffraction

“…This type of ordering was observed in GaAs 0.53 Sb 0.47 on (0 0 1)InP, In 0.5 Ga 0.5 As on (1 1 0)InP and In 0.52 Al 0.48 As on (0 0 1)InP [12,13,30,31]. A more extensive study was performed by Kuan et al [11] with Al x Ga 1Àx As on (1 1 0) and (0 0 1) GaAs using X-ray diffraction.…”

“…the CuAu-I structure (p ¼ 1, G ¼ ½0 0 1) as seen in Al x Ga 1Àx As grown on GaAs [11], the chalcopyrite structure (p ¼ 2, G ¼ ½2 0 1) as seen in GaAs 0.53 Sb 0.47 grown on InP [12,13], and the CuPt structure (p ¼ 1, G ¼ ½1 1 1) as seen in In 0.52 Ga 0.48 P grown on GaAs [9].…”

Recent advances in metal-organic vapor phase epitaxy

“…A novel feature in the growth of alloy semiconductors, particularly Ino.5Gao.5P as well as (Al,Gal-+)0.52In0.48P is the appearance of ordering on the cation sublattice. The alloy ordering was first observed in the Al,Gal-,As [63] alloy system and has since been seen in In,Gal-,As [64], Ga,Inl-,P [65], GaAs,Sbl-, [66], and other systems. Alloy ordering in the Ga,Inl-,P system is characterized by the segregation of Ga and In to alternate <111> planes [65].…”