The k.p interaction in InP and GaAs from the band-gap dependence of the effective mass

Shantharama, L. G.; Adams, A.R.; Ahmad, C. N.; Nicholas, R.J.

doi:10.1088/0022-3719/17/25/007

Cited by 79 publications

(16 citation statements)

References 27 publications

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“…Here we neglect to first order the pressure variation of 8, which has been justified in GaAs based on the balance between d-electron and lattice compression effects [6]. The pressure variation of Eg is found from experiment: E:(P)/Eg(P = 0) = 1 + 6.87 xlOP3P -1.03 x 10-5P2 ( P in kbar) Ill].…”

Section: Resultsmentioning

confidence: 99%

Pressure Dependence of the Electron Effective Mass in GaAs up to the 1s(Γ)‐1s(X) Crossover

Jiang

Chen

Tischler

et al. 1996

Physica Status Solidi (b)

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The effect of hydrostatic pressure ( P ) on the k = 0 conduction band mass m i ( P ) in lightly Si-doped GaAs is studied by far-infrared magnetospectroscopy. The electron cyclotron resonance (CR) at (T = 17 K), and the ls-Zp+ absorption of Si donors (at T = 4.2 K), are measured up to 40 kbar under fields of 6 to 9 T by Fourier transform and laser magnetotransmission techniques. DX-center trapping is avoided by visible illumination. A double-bellows diamond-anvil cell and 36 mm bore magnet enable in situ P-B-T tuning. The slopes dE/dB for the CR and ls-2p+ peaks decrease with pressure in accordance with effective mass theory, with no sign of strong deepening for the Si k(T) state. We find m:(P)/mi(O) = 1 + (6.1 * 0.3) x 10-3P -(1.3 f 0.5) x 10-5P2 ( P in kbar) from the CR data, after correcting for nonparabolicity via an effective two-band k. p model. This agrees well with prior results limited to 17 kbar, and extends the measurement of mi(P) in GaAs to the T-X crossover.

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Section: Resultsmentioning

confidence: 99%

Pressure Dependence of the Electron Effective Mass in GaAs up to the 1s(Γ)‐1s(X) Crossover

Jiang

Chen

Tischler

et al. 1996

Physica Status Solidi (b)

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“…The main reason for this difference is a divergence on the interpretation of the influence of the remote bands on the experimental measurements of the electron spin resonance as pointed out by Shantharama et al. 98,99 In their article they compare, e.g., Chadi et al 95 value for GaAs of E P = 29 eV with their estimation based on an analysis of a 14×14 k·p Hamiltonian of E P = 25.0(5) eV. The reason for the divergence is atributed to an overestimation of the influence of the remote bands.…”

Section: E K·p Parametersmentioning

confidence: 99%

A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory

Bastos

Sabino

Sipahi

et al. 2018

Journal of Applied Physics

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Despite the large number of theoretical III-V semiconductor studies reported every year, our atomistic understanding is still limited. The limitations of the theoretical approaches to yield accurate structural and electronic properties on an equal footing, due to the unphysical self-interaction problem that affects mainly the band gap and spin-orbit splitting (SOC) in semiconductors and, in particular, III-V systems with similar magnitude of the band gap and SOC. In this work, we will report a consistent study of the structural and electronic properties of the III-V semiconductors employing the screening hybrid-DFT framework, fitting the α parameters for 12 different III-V compounds, namely, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, in order to minimize the deviation between the theoretical and experimental values of the band gap and SOC. Structural relaxation effects were also included. Except for AlP, whose α = 0.127, we obtained α values spreading from 0.209 to 0.343, deviating less than 0.1 from the universal value of 0.25. Our results for the lattice parameter and elastic constants indicate that the fitting of the α does not affect those structural parameters when compared with the HSE06 functional, where α = 0.25. Our analysis of the band structure based on the k·p method shows that the effective masses are in agreement with the experimental values, which can be attributed to the simultaneous fitting of the band gap and SOC. Finally, we estimate the values of g-factors, extracted directly from band structure, which are close to experimental results indicating that the obtained band structure produced a realistic set of k·p parameters. arXiv:1801.07526v1 [cond-mat.mtrl-sci]

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“…According to the relation E P ϰ 1 / a 2 between 0 and 300 K E P should change about −0.4% or less. 11,12 However, this procedure only considers the static change of 1 / a 2 . With a phenomenological approach of a temperature dependency of E P the experimental data can only be correctly described by an about 14 times larger, i.e., −5.4% decrease in E P from 2.6 K to room temperature.…”

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Temperature-dependent electron Landégfactor and the interband matrix element of GaAs

et al. 2009

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Very high precision measurements of the electron Landé g factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the temperature-dependent effective mass temperature dependence of the interband matrix element within a common five-level k · p theory can model both parameters consistently. A strong decrease in the interband matrix element with increasing temperature consistently closes a long lasting gap between experiment and theory and substantially improves the modeling of both parameters. DOI: 10.1103/PhysRevB.79.193307 PACS number͑s͒: 78.55.Cr, 71.18.ϩy, 78.20.Ci, 78.47.Cd The semiempirical k · p theory is a universal tool to calculate the band structure in semiconductors and semiconductor heterostructures and is regularly employed in such different fields as the physics of semiconductor laser design, the quantum Hall effect and spintronics. The part of the theory describing magnetic field related phenomena has been extensively improved since its introduction by Kane 1 and Luttinger and Kohn 2 in the mid fifties. Nowadays, five and more band k · p models are state of the art and many lowtemperature experiments have confirmed the incredible accuracy of k · p calculations. [3][4][5][6][7][8] All these experiments support the validity of k · p theory whereas a single but central experiment, which measures the temperature dependence of the electron Landé g factor in GaAs, shows a strong discrepancy between experiment and k · p theory. 9In this Brief Report we present extremely high precision, temperature-dependent measurements of the electron Landé g factor and show that by introducing a temperaturedependent interband matrix element yields a consistent explanation for the temperature dependence of the electron Landé g factor and the effective mass within common k · p theory, while keeping full temperature dependence on the very well-known interband critical points. The k · p theory is a perturbation theory calculating the electronic band structure by expansion around a single point in the Brillouin zone. In direct semiconductors such as GaAs, the high symmetry ⌫ point is the natural expansion point. The only input parameters are in this case the measured band gaps at k = 0 and the interband matrix elements ͑P , PЈ , PЉ ,...͒. The change in the band-gap energies with the lattice temperature are very well known for GaAs and the only remaining relevant parameter which does not possess a direct experimental access is the interband matrix element P or the related Kane energy E P = ͑2m 0 / ប 2 ͒P 2 , respectively. 1 The temperature dependence of P has been assumed to be marginal since P is inversely proportional to the interatomic distance a ͑Ref. 10͒ and the well-known change in a with temperature T due to anharmonic lattice potential is small. According to the relation E P ϰ 1 / a 2 between 0 and 300 K E P should change about −0.4% or less.11,12 However, this procedure only considers the static...

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The k.p interaction in InP and GaAs from the band-gap dependence of the effective mass

Cited by 79 publications

References 27 publications

Pressure Dependence of the Electron Effective Mass in GaAs up to the 1s(Γ)‐1s(X) Crossover

Pressure Dependence of the Electron Effective Mass in GaAs up to the 1s(Γ)‐1s(X) Crossover

A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory

Temperature-dependent electron Landégfactor and the interband matrix element of GaAs

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