Pressure Dependence of the Electron Effective Mass in GaAs up to the 1s(Γ)‐1s(X) Crossover

Jiang, Zhewei; Chen, R. J.; Tischler, Joseph G.; Weinstein, B. A.; McCombe, B. D.

doi:10.1002/pssb.2221980106

Cited by 8 publications

(4 citation statements)

References 11 publications

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“…The magnetic field dependencies of all the transitions seen in Sample 1 are shown for several pressures in Fig. 3 for QWs are in accordance with similar results for bulk GaAs [14]. (No D ± ± line was seen in the data of Ref.…”

Section: Resultssupporting

confidence: 88%

Pressure Tuning of Many-Electron Impurity Interactions in Confined Semiconductor Structures

Tischler¹,

Singh

Nickel

et al. 1999

phys. stat. sol. (b)

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Section: Resultssupporting

confidence: 88%

Pressure Tuning of Many-Electron Impurity Interactions in Confined Semiconductor Structures

Tischler¹,

Singh

Nickel

et al. 1999

phys. stat. sol. (b)

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“…In earlier pressure-FIR studies of the CR and D0 transitions in bulk GaAs, we explored the DX-center [19], and determined the effective mass of electrons up to the [" -X crossover at 40 kbar [20] -a factor of two extension over existing results [21].…”

Section: Double-bellows Ram and Fir Dacmentioning

confidence: 99%

“…The calculations reported in Fig. 6 are performed for arbitrary magnetic fields > 4 T, and include the known pressure-dependencies of the effective mass and the dielectric constant in bulk GaAs [20,21]. Also incorporated (via a k • p treatment) are the effects of conduction band non-parabolicity, taken to be pressure-independent and equal to that in bulk GaAs at 1 atm.…”

Section: Fir Magnetospectroscopy Of Cr D 0 and D-mentioning

confidence: 99%

High-Pressure Studies of Semiconductors in the Far-Infrared: Donor States in Quasi-2D

et al. 2000

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We review recent experimental advances by the Buffalo group in performing far-infrared magnetospectroscopy under he tuning of applied high hydrostatic pressure. Experiments are reported for the effects of pressure on Si donors in modulation doped GaAs/AlGaAs quantum wells. We clearly observe pressure-mediated competition between free (i.e., Landau level) and bound electron states -the latter arising from both neutral (D 0 ) and charged (D -) donor species. With increasing pressure, there is a progression of the observed spectra from being dominated by cyclotron resonance and the D -singlet (or singlet-like bound magnetoplasmon) transitions, to showing the D0 is →2p+ line. The main reason for this evolution is the decrease in electrons due to the crossover of the Si levels associated with the F (well) and X (barrier) conduction minima. Indeed, for pressures above 30 kbar the Γ(well)-X(barrier) crossover quenches all the transitions. However, we find strong evidence that electrons are independently lost to a trap, which becomes active several kbar below this crossing. A possible candidate for this trap is residual Se impurities in the barriers. We present the results of detailed numerical calculation which are found to agree very well with the measured field dependencies of the cyclotron resonance, D0 and D -transition energies. In the sample with the highest doping, a new transition is observed for fields and pressures above 7.5 T and 5 kbar. Reasons for this apparent anomaly are discussed.

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“…Initial experiments with a unique diamond anvil pressure cell have demonstrated the efficacy of the technique and permitted the evolution of the spectra to be explored as a function of excess electron density in a single MQW sample [22,23]. Figure 8 shows some results from a systematic FTIR study of pressure effects on the same samples discussed in the previous section.…”

Section: Hydrostatic Pressure Tuning Of Many-electron Effectsmentioning

confidence: 99%

Spectroscopy of Charged Donors and Many-Electron Effects in Semiconductor Quantum Wells

et al. 1999

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Far infrared magnetospectroscopic studies of negative donor ions (D -), and donors in the presence of many excess electrons in high magnetic fields in GaAs/AlGaAs quantum wells are reviewed. Both singlet and triplet transitions of well-center D --ions were observed and are in good agreement with recent theoretical calculations. For off-well-center D --ions evidence for a predicted magnetic-field-induced "unbinding" of the second electron was found. In the presence of many excess electrons the D --singlet and -triplet transitions are blue-shifted substantially and evolve into bound magnetoplasmon excitations. Cusps are observed at integral and fractional Landau-level filling factors (v) in a plot of normalized blue-shift of the D --singlet-like bound magnetoplasmon transition vs. v. For v < 1, the singlet-like bound magnetoplasmon transition continuously approaches the isolated D --singlet transition with increasing magnetic field, while the triplet-like transition loses strength, irrespective of the electron density. Exact diagonalization studies of a donor ion with a few electrons in a parabolic lateral confining potential show the importance of electron-electron interactions and localization due to the long-range fluctuating potential in explaining this behavior. High pressure studies in a specially designed diamond anvil cell exhibit a continuous evolution from bound magnetoplasmon transitions to isolated D --transitions to neutral donor transitions in a single sample as the pressure is increased and the electron density in the wells is decreased.

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Pressure Dependence of the Electron Effective Mass in GaAs up to the 1s(Γ)‐1s(X) Crossover

Cited by 8 publications

References 11 publications

Pressure Tuning of Many-Electron Impurity Interactions in Confined Semiconductor Structures

Pressure Tuning of Many-Electron Impurity Interactions in Confined Semiconductor Structures

High-Pressure Studies of Semiconductors in the Far-Infrared: Donor States in Quasi-2D

Spectroscopy of Charged Donors and Many-Electron Effects in Semiconductor Quantum Wells

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