The isoelectronic trap bismuth in indium phosphide

An improved technique is described for the growth of InP by liquid-phase epitaxy. The use of gold-plated reflector tubes in the furnace design has improved the control of layer quality, and background doping levels have been consistently reduced to 3 X 10ZS/cm 3 by replacing polycrystalline InP by PH3(g) as a source of phosphorus. The behavior of the dopants S*~, Ge, S,i,, Te, Zn, Cd, and Bi in InP are discussed and the distribution coefficients "k' are found to be ksa --0.0019, kGe -"-0.005, ksi -"-4, kwe -" 0.27, kzn = 1.14, kcd _~ 0.002, km--0.002 to 0.0002The dopants Sn and Zn were found to be the most suitable for n and p doping for LED fabrication. The Group IV elements yielded n-type material only, although the mobility measurements indicated possible amphoteric behavior for Ge. The Hall mobilities at room temperature Ior the n-type samples show good agreement with theory.z Present address:

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“…The results of this work have been recently reported (11). The results of this work have been recently reported (11).…”

Section: Doping Experimentsmentioning

confidence: 71%

Indium Phosphide

Astles¹,

Smith²,

Williams³

1973

J. Electrochem. Soc.

122

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“…The Bi incorporation into GaAs was found to induce shallow localized states associated with Bi clusters above the top of the GaAs valence band due to the valence band anticrossing interaction, thus causing the red shift of PL [1,18]. In addition, the Bi in InP with a doping level was found to act as isoelectronic impurities and revealed rich spectroscopic information near the bandgap of InP (1.3 to 1.4 eV) at low temperatures [10,11]. However, the effects of cluster localization and isoelectronic impurities both introduce the PL peak red shift near the InP bandgap energy, in contrast to the PL signals observed from the middle of the bandgap.…”

Section: Resultsmentioning

confidence: 99%

Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy

et al. 2014

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InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused by the Bi incorporation was estimated to be about 56 meV/Bi%. Strong and broad photoluminescence signals were observed at room temperature for samples with xBi < 2.4%. The PL peak position varies from 1.4 to 1.9 μm, far below the measured InPBi bandgap.

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“…In 2011, GaSbBi alloys were firstly grown by MBE [10] and LPE [186] with a Bi content of 0.8% and 0.4%, respectively. In 2013, Rajpalke et al [187] acquired GaSbBi films with a Bi content up to 5% by decreasing growth temperature from 350 to 250 • C using MBE.…”

Section: Gasbbimentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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The isoelectronic trap bismuth in indium phosphide

Cited by 41 publications

References 11 publications

Indium Phosphide

Indium Phosphide

Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

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