The Investigation of W Band Microstrip Integrated High Order Frequency Multiplier Based on the Nonlinear Model of Avalanche Diode

Zhao, Minghui; Yang, Fan; Wu, Dakui; Zhan, Jingkun

doi:10.2528/pier08090702

Cited by 12 publications

(7 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Millimeter-wave and submillimeter-wave frequency multipliers [1][2][3][4][5][6] and mixers [7][8][9][10][11][12][13][14] based on planar Schottky diodes are widely used for atmosphere and space detection. The multipliers are usually driven by an oscillator [15][16][17][18] or a phase-locked millimeter-wave source.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A New Scheme for the Design of Balanced Frequency Tripler With Schottky Diodes

Guo¹,

Xu²,

Qian³

2013

PIER

View full text Add to dashboard Cite

Abstract-We propose a balanced frequency tripler scheme for millimeter-wave and submillimeter-wave application, in which doublesided suspended stripline is adopted. Two arms of Schottky diodes are mounted on the upper side of the substrate, and the other two arms of diodes are mounted on the lower side. The diodes are DC biased without bypass chip capacitor, which is essential in the common used balanced tripler scheme. Furthermore, the numbers of the diodes are doubled as there are only two arms of diodes in the common balanced tripler scheme, and this will double the power handling capability of the tripler. A W-band frequency tripler is designed according to the proposed scheme with commercial Schottky Varistors. The output power is from 2.9 to 5.7 dBm at the frequencies from 89.7 to 94.8 GHz, with the conversion efficiency from 1.95% ∼ 3.7%.

show abstract

Section: Introductionmentioning

confidence: 99%

“…The balanced frequency multipliers, mostly the frequency doublers and frequency triplers, usually have two arms of the diodes [1][2][3][4][5][6]. The early multiplers usually employ only two diodes, with each diode in one arm limited by the chip process at that time.…”

Section: Introductionmentioning

confidence: 99%

A New Scheme for the Design of Balanced Frequency Tripler With Schottky Diodes

Guo¹,

Xu²,

Qian³

2013

PIER

View full text Add to dashboard Cite

show abstract

“…Planar microwave circuits such as microstrip lines, coplanar waveguides (CPW) are widely used in microwave and millimeter-wave circuits [1][2][3][4][5]. It is necessary to acquire the scattering parameters of the circuits to make sure that their performances satisfy the needs.…”

Section: Introductionmentioning

confidence: 99%

Measurements of Planar Microwave Circuits Using an Improved TRL Calibration Method

Liu¹,

Tong²,

Tian³

et al. 2010

PIER

View full text Add to dashboard Cite

Abstract-In this paper, an improved TRL (Thru-Reflect-Line) calibration method is presented. This method is based on ten-term error model of a two-port vector network analyzer(VNA) measurement system. Eight error terms induced by fixtures as well as two leakage errors are derived directly from the S parameters of the calibration standards measured from the coaxial reference plane without converting S parameters to T parameters. To validate our algorithm, a microstrip device with a via hole and a coplanar waveguide transmission line are fabricated and calibrated using the present TRL calibration method and Engen's algorithm, respectively. The magnitudes and phases of S 11 and S 21 of the devices are compared. The consistency of the de-embedded results with those calibrated by Engen's TRL algorithm illustrates the validity of the TRL algorithm in this paper.

show abstract

“…In these frequency bands simplicity of non linear devices is required to minimize parasitic effects. Different types of diodes, such as avalanche diodes [3] or Schottky diodes, could be a natural choice.…”

Section: Introductionmentioning

confidence: 99%

Characterization and Modeling of Schottky Diodes Up to 110 GHZ for Use in Both Flip-Chip and Wire-Bonded Assembled Environments

Zeljami¹,

Gutiérrez²,

Pascual³

et al. 2012

PIER

View full text Add to dashboard Cite

Abstract-This paper presents a wideband model, from Direct Current (DC) to W band, for a single Anode Schottky Diode based on a commercial VDI chip. Different measurements have been performed to obtain a complete large-signal equivalent circuit model suitable for the device under consideration up to 110 GHz, and for its integration in planar circuits. The modeling has been done using a combination of DC measurements, capacitance measurements, and RF scattering measurements. The test structure for on-wafer Sparameter characterization has been developed to obtain an equivalent circuit for Coplanar to Microstrip (CPW-Microstrip) transitions, then verified with 3D Electromagnetic (EM) tools and finally used to deembed device measurements from empirical data results in W band. 3D EM simulation of the diodes was used to initialize the parasitic parameters. Those significant extrinsic elements were combined with the intrinsic elements. The results show that the proposed method is suitable to determine parameters of the diode model with an excellent fit with measurements. Using this model, the simulated performance for a number of diode structures has given accurate predictions up to 110 GHz. Some anomalous phenomena such as parasitic resistance dependence on frequency have been found.

show abstract

The Investigation of W Band Microstrip Integrated High Order Frequency Multiplier Based on the Nonlinear Model of Avalanche Diode

Cited by 12 publications

References 27 publications

A New Scheme for the Design of Balanced Frequency Tripler With Schottky Diodes

A New Scheme for the Design of Balanced Frequency Tripler With Schottky Diodes

Measurements of Planar Microwave Circuits Using an Improved TRL Calibration Method

Characterization and Modeling of Schottky Diodes Up to 110 GHZ for Use in Both Flip-Chip and Wire-Bonded Assembled Environments

Contact Info

Product

Resources

About