The investigation of dielectric properties and ac conductivity of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors using impedance spectroscopy method

Kaya, A.; Alialy, S.; Demirezen, S.; Balbaşı, Muzaffer; Yerişkin, Seçkin Altındal; Aytimur, Arda

doi:10.1016/j.ceramint.2015.10.126

Cited by 70 publications

(34 citation statements)

References 27 publications

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“…The relation between permittivity and electric modulus is that the latter is reciprocal of the former, i.e. M*=1/ε* [1,2, 3,5,7,8], therefore real and imaginary parts of electric modulus are calculated using the following equation; It is seen that σac-f plots increase gradually up to 0.1 MHz, then they increase rapidly. The increase in σac with increasing frequency leads to an increase in eddy current and this is consistent with the decreasing strength of series resistance with frequency ( Figure 2 Figure 7 (b) shows σac-dσac/dlnω plot whose yintercept corresponds to σdc.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, there has been a great effort for enhancing the performance metal-semiconductor (MS) structures by using interfacial materials with high dielectric constant such as TiO2 [1-3] Bi3Ti4O12 (BTO) [4,5], BaTiO3 [6], (graphene-oxide-doped PrBaCoO nanoceramics) [7], (7% graphene doped-PVA) [8] and (Al2O3/Ga2O3(Gd2O3)) [9]. Among these various interlayer materials, ferroelectrics come forward since not only it provides high dielectric constant but also it is suitable for photodiode and non-volatile memory applications [10].…”

Section: Introductionmentioning

confidence: 99%

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Effects of Frequency and Bias Voltage on Dielectric Properties and Electric Modulus of Au/Bi4Ti3O12/n-Si (MFS) Capacitors

Durmuş¹,

Bilkan²,

Yıldırım³

2017

Journal of Polytechnic

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Bu makaleye şu şekilde atıfta bulunabilirsiniz(To cite to this article): Durmuş P., Bilkan Ç. and Yıldırım M., "Effects of frequency and bias voltage on dielectric properties and electric modulus of Au/Bi4Ti3O12/n-Si capacitors", Politeknik Dergisi, 20(4): 1003-1008, (2017). Politeknik Dergisi, 2017; 20 (4) : 1003-1008 Journal of Polytechnic, 2017; 20 (4) : 1003-1008 ABSRACTIn this work, a metal-ferroelectric-semiconductor (MFS) type capacitor was fabricated and admittance measurements were held in a wide frequency range of 1 kHz-5 MHz at room temperature for the investigation of frequency and voltage dependence of complex dielectric constant, complex electric modulus and electrical conductivity of the MFS capacitor. Bismuth titanate (Bi4Ti3O12) with high dielectric constant was used as interfacial ferroelectric material and the structure of MFS capacitor was obtained as Au/Bi4Ti3O12/n-Si. Experimental results showed that dielectric, modulus and conductivity parameters are strong functions of frequency and voltage especially in depletion and accumulation regions due to the existence of surface states (Nss), series resistance (Rs), interfacial polarization and interfacial layer. It was found that Rs of the structure and interfacial ferroelectric layer are efective in accumulation region whereas surface states (Nss) and interfacial polarization are efective in depletion region. Also the changes in dielectric, modulus and conductivity parameters become considerably high particularly at low frequencies due to high values of Rs and Nss. The observed anomalous peak in voltage dependent plots of capacitance and dielectric constant was atributed to the particular density distribution of Nss, Rs and minority carrier injection. Moreover, the value of conductivity at low and intermediate frequencies is almost independent of frequency thus low frequency data was used to extract d.c. conductivity. This work showed that the use of high-dielectric Bi4Ti3O12 as ferroelectric interfacial layer in a MFS capacitor is preferable due to high values of its dielectric constant compared with traditional insulator layer materials such as SiO2 and SnO2. Therefore, a MFS capacitor with Bi4Ti3O12 interfacial layer can store more energy thanks to its high dielectric constant. Keywords: MFS capacitors, frequency and voltage dependence, surface states and interfacial polarization, dielectricproperties and electrical modulus.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effects of Frequency and Bias Voltage on Dielectric Properties and Electric Modulus of Au/Bi4Ti3O12/n-Si (MFS) Capacitors

Durmuş¹,

Bilkan²,

Yıldırım³

2017

Journal of Polytechnic

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“…Therefore, studies on interface properties are essential in the understanding of the electrical and dielectric properties of the MIS structures, and are especially of the technological importance for development of GaAs-based devices [8][9][10]. The interfacial parameters, such as the density of interface states N ss and the thickness of interfacial layer, can influence both the electrical and dielectric behavior of these structures [11][12][13][14][15][16]. It is known that when localized states exist at the interface, the device behavior is different from the ideal case.…”

Section: Introductionmentioning

confidence: 99%

“…Al 2 O 3 is an attractive candidate for the high-k material. It has a wide band gap of about 6.6 eV and dielectric constant of 8.6 (for the amorphous oxide, typical for layers grown by atomic layer deposition (ALD)) [1][2][3][4][5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

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Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature

et al. 2016

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An (Au/Ti)/Al2O3/n-GaAs structure with thin (30 Å) interfacial oxide layer (Al2O3), formed by atomic layer deposition technique is fabricated to investigate both frequency and applied bias voltage dependences of real and imaginary parts of dielectric constant (ε and ε ) and electric modulus (M and M ), loss tangent tan δ and ac electrical conductivity σAC in a wide frequency range from 1000 Hz to 1 MHz at room temperature. The dielectric properties of the (Au/Ti)/Al2O3/n-GaAs metal-insulator-semiconductor structure are obtained using the forward and reverse bias capacitance-voltage (C-V ) and conductance-voltage (G/ω-V ) measurements in the applied bias voltage range from -4 V to +4 V, at room temperature. Experimental results show that the dielectric parameters were strongly frequency and voltage dependent. For each frequency the (C-V ) plots show a peak and the change in frequency has effect on both the intensity and position of the peak. ε , ε and tan δ decrease with increasing frequency, whereas σAC increases with increasing frequency at applied bias voltage. M increases with the increasing frequency and reaches a maximum. M shows a peak and peak position shifts to higher frequency with increasing applied voltage. It can be concluded that the ε , ε , tan δ, M , M and σAC values of the (Au/Ti)/Al2O3/ n-GaAs structure are strongly dependent on both the frequency and applied bias voltage especially in the depletion and accumulation region. Also, the results can be deduced to imply that the interfacial polarization is easier at low frequencies, therefore contributing to the deviation of dielectric properties and AC electrical conductivity of (Au/Ti)/Al2O3/n-GaAs structure.

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Frequency and voltage dependence of dielectric properties, complex electric modulus, and electrical conductivity in Au/7% graphene doped‐PVA/n‐Si (MPS) structures

Yerişkin

Balbaşı

Tataroğlu

2016

J of Applied Polymer Sci

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In order to increase the capacitance of Au/n-Si (MS) structure, 7% graphene doped PVA was coated on n-Si as an interfacial layer. The measured data of capacitance (C) and conductance (G/x) of Au/7% graphene doped-PVA/n-Si (MPS) structure was utilized for the calculation of real and imaginary parts of complex permittivity (e* 5 e 0 2 je 00 ), loss tangent (tand), complex electric modulus (M* 5 M 0 1 jM 00 ), and electrical conductivity (r). The admittance measurements (C and G/x) were carried out in the frequency range of 0.5 kHz to 1 MHz at room temperature. Frequency dependence of the dielectric constant (e 0 ), dielectric loss (e 00 ) and tand shows a dispersive behavior at low frequencies. This behavior was explained by Maxwell-Wagner relaxation. Due to the dipolar and the interfacial polarizations, as well as the surface states (N ss ) and the interfacial PVA layer, the parameters exhibited a strong dependence on frequency and applied bias voltage. The r versus log(f) plot exhibited both low and high frequency dispersion phenomena such that at low frequencies r value corresponding to the dc conductivity (r dc ), but at high frequencies it corresponds to the ac conductivity (r ac ). M 0 and M 00 , both, have low values in the low frequency region. However, an increase is observed with the increasing frequency due to the short-range mobility of charge carriers. As a result, the change in dielectric parameters and electric modulus with frequency is the result of relaxation phenomena and surface states.

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The investigation of dielectric properties and ac conductivity of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors using impedance spectroscopy method

Cited by 70 publications

References 27 publications

Effects of Frequency and Bias Voltage on Dielectric Properties and Electric Modulus of Au/Bi4Ti3O12/n-Si (MFS) Capacitors

Effects of Frequency and Bias Voltage on Dielectric Properties and Electric Modulus of Au/Bi4Ti3O12/n-Si (MFS) Capacitors

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature

Frequency and voltage dependence of dielectric properties, complex electric modulus, and electrical conductivity in Au/7% graphene doped‐PVA/n‐Si (MPS) structures

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The investigation of dielectric properties and ac conductivity of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors using impedance spectroscopy method

Cited by 70 publications

References 27 publications

Effects of Frequency and Bias Voltage on Dielectric Properties and Electric Modulus of Au/Bi4Ti3O12/n-Si (MFS) Capacitors

Effects of Frequency and Bias Voltage on Dielectric Properties and Electric Modulus of Au/Bi4Ti3O12/n-Si (MFS) Capacitors

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al2O3/n-GaAs with Thin Al2O3Interfacial Layer at Room Temperature

Frequency and voltage dependence of dielectric properties, complex electric modulus, and electrical conductivity in Au/7% graphene doped‐PVA/n‐Si (MPS) structures

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Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature