The interrelation of magnetic and dielectric properties of Co_xMn_{1 −x}S solid solutions

Abstract

Magnetization of the cation-substituted Co(x)Mn(₁ - x)S sulfides upon cooling in zero and 100 Oe magnetic fields at the temperatures 4-300 K has been measured. Permittivity of these materials at frequencies from 1 to 100 kHz in magnetic and dc electric fields in the 100-300 K temperature range has been determined. Change in the dielectric permittivity under an external magnetic field is found to have a maximum in the temperature ranges of T₁ ~ (110-120 K) and T₂ ~ (230-250 K). Formation of spontaneous magnetic moment and the rise of magnetic susceptibility are revealed at the same temperatures in the Co(x)Mn(₁- x)S solid solutions. Features of the magnetoelectric properties of the sulfides have been explained by orbital ordering.

Magnetoresistance effect in anion-substituted manganese chalcogenides

“…In sulfide systems Me x Mn 1− x S (Me = 3d, 4f metal), the metal–insulator transition and a colossal magnetoresistance (GMR) effect are revealed. The value of GMR is comparable to that of manganites .…”

Влияние Электронного И Дырочного Допирования На Транспортные Характеристики Халькогенидных Систем

“…Оно обусловлено, как правило, практической важностью использования таких систем, так и внутренней логикой развития физики. В настоящее время интенсивно исследуются халькогениды европия [1,2], селениды CdCr 2 Se 4 , HgCr 2 Se 4 [3][4][5], топологические изоляторы Bi 2 X 3 (X = Se, Te) [6] и сульфиды марганца Me X Mn 1−X (Me -3d-и 4f-элементы), синтезированные на основе моносульфида марганца [7][8][9], в которых влияние магнитного порядка и допирования на транспортные свойства проявляется в виде магниторезистивного и гальваномагнитного эффектов, а также перехода металл−диэлектрик.…”

Metal–semiconductor transition in SmxMn1−xS solid solutions

“…We used the Monte Carlo (MC) method for calculation the magnetic characteristics for 18 Â 18 Â 18, 22 Â 22 Â 22 size lattice with 50 000-100 000 Monte Carlo steps per site with periodical boundary conditions. Spin-spin correlators S and hS z i -we fit formula (2) to experimental data with parameter W, r. The best agreement is achieved for the band width with W ¼ 3 eV, r 0 ¼ 0.5 V cm and spontaneous magnetization tends to zero hS z i ¼ 0. A random-bond model with offdiagonal disorder depending on an instant spin configuration gives a quantitative description of the experimental dependence r(T).…”

“…1 Introduction In recent years particular attention has been focused on investigating the metal-semiconductor transition and magnetoelectric effect [1,2]. Among the substances with the strong correlation between the magnetic and electrical properties are the disordered systems that reveal these effects.…”