The electrical properties and the Hall effect in semiconductor compounds Ag0.01Mn0.99S and Tm0.01Mn0.99S have been studied in the temperature range 80–400 K in a magnetic field of 12 kOe. The mechanism of conduction is established, which depends on the type of doping and concentration from the current - voltage characteristics. At the replacement of manganese by silver, the Mott type was found, and the replacement by thulium causes ohmic conductivity. The mobility and type of charge carriers are found from the Hall constant.
The composite compound Bi2(Sn0.7Fe0.3)2O7/Bi2Fe4O9 in the ratio 91/9% was synthesized by the solid-phase reaction method. The current-voltage characteristics were studied in the temperature range 800-400 K. The hysteresis of the current-voltage characteristics was found. The magnetoelectric interaction and thermoelectric power have been studied. The temperatures of predominance of the even and linear functions of the magnetoelectric effect are established. The sign change of the thermopower has been found.
Semiconductor BiFe0.95Co0.05O3 thin-film compounds were obtained by a flare technique. The surface morphology of the films and the effect of electronic doping by replacing trivalent iron with cobalt ions on the structural, optical, magnetic, and kinetic properties in the temperature range 77-600 K in magnetic fields up to 12 kOe are studied. The existence of two relaxation channels in the impedance spectrum at frequencies of 0.1–1000 kHz has been established. The negative magnetoresistance in the anomalous magnetization region and the maximum magnetoimpedance in the vicinity of the surface phase transition has been found. Using the Hall effect measurements, carrier types prevailing in the magnetoresistance and magnetoimpedance effects has been found. The magnetization anomalies are explained using the model of superparamagnetic clusters and the magnetoresistance is attributed to the scattering of carriers by the spin fluctuations.
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