The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C

Liu, Jin; Pey, K. L.; Choi, W. K.; Fitzgerald, Eugene A.; Antoniadis, D.A.; Pitera, Arthur J.; Lee, Minjoo Larry; Chi, Dongzhi; Tung, Chih-Hang

doi:10.1016/j.tsf.2004.05.047

Cited by 34 publications

(20 citation statements)

References 13 publications

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“…Subsequently, unreacted nickel was removed, and 300-nm Al was sputtered on the backside of the samples to form ohmic contact. [14]. Thus, no obvious phase change of NiGe film has happened even at high annealing temperature up to 700 • C. In this letter, the atomic force microscopy (AFM) measurement has been employed to measure the surface roughness.…”

Section: Methodsmentioning

confidence: 99%

Investigation on Morphology and Thermal Stability of NiGe Utilizing Ammonium Fluoride Pretreatment for Germanium-Based Technology

Guo

Wang

et al. 2011

IEEE Electron Device Lett.

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In this letter, a novel ammonium fluoride pretreatment (AFP) method has been proposed to improve the morphology and thermal stability of NiGe on bulk germanium devices. The root mean square roughness of NiGe film has been obviously decreased using the AFP method, indicating more smooth and flat NiGe surfaces formed compared with samples by hydrochloric acid and hydrofluoric acid pretreatments. Also, the thermal stability of NiGe film has been enhanced, since uniform NiGe film can be formed at temperature as high as 600 • C. In addition, NiGe/n-Ge Schottky diodes have been fabricated to illustrate the benefits of AFP method in Ge-based devices. Better rectifying performance has been achieved using the AFP method from the benefit of suppressing reverse current about one order of magnitude, compared with the hydrochloric acid treated sample. Thus, both the material properties and electrical characteristics of NiGe film have been effectively improved by the simple AFP technique, revealing its potential for Ge-based process technology.

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Section: Methodsmentioning

confidence: 99%

Investigation on Morphology and Thermal Stability of NiGe Utilizing Ammonium Fluoride Pretreatment for Germanium-Based Technology

Guo

Wang

et al. 2011

IEEE Electron Device Lett.

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“…There has been a lot of work reported on the solid-state interactions in the Ni/Ge system [1][2][3][4][5] but interactions in the Pd/Ge system have not been as extensively reported on [6][7][8]. The available reports agree on the second and the final phase NiGe formed in the Ni/Ge system, but there is some disagreement on the first phase.…”

Section: Phase-formation Sequencesmentioning

confidence: 99%

Interface Control Processes for Ni/Ge and Pd/Ge Schottky and Ohmic Contact Fabrication: Part Two

Habanyama¹

2018

Advanced Material and Device Applications With Germanium

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We examine the reported interface-based processes used in the modulation of Schottky barrier heights at the nickel germanide/n-type germanium and palladium germanide/ntype germanium junctions. Various sample preparation and characterization methods are discussed. Stable Ni/Ge and Pd/Ge structural phases are identified, and their temperature range of stability is established. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics are analyzed to study the effect of various interface control processes. Sheet resistivity and its stability over various annealing temperature ranges are analyzed. The fundamental mechanisms at play in order to achieve ohmic characteristics are observed and analyzed using various interface control processes. Some interfacial and structural factors that pin the Fermi level are analyzed in relation to experimental results. The different interfacial control processes are analyzed, and their effectiveness is compared. Recommendations are made for the improvement of Ni and Pd contacts in the next generation of n-type germanium-based nanoelectronic devices.

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“…The available reports agree on the second and final phase, NiGe for the Ni/Ge system but there is some disagreement on the first phase. A few researchers report hexagonal Ni 3 Ge 2 as the first phase [11] but monoclinic Ni 5 Ge 3 is generally agreed upon by most researchers as the first phase to form [1,2,12,13] and it forms around 150 C. There is an agreement that Pd 2 Ge is the first phase to be formed in the Pd/Ge system, the second and final phase to be formed is PdGe. The formation of these phases is generally reported to be sequential [4,15] but PdGe has been reported to form before the end of Pd 2 Ge formation [16].…”

Section: Introductionmentioning

confidence: 99%

“…Apart from electrical properties, a thorough understanding of the solid-state interactions in metal-germanium systems is required in order to foresee and avoid problems that may be encountered during integration [the process of producing an integrated circuit (I.C.)]. Solidstate interactions in the Ni/Ge system have been extensively studied in the past [1,2,[11][12][13], while the Pd/Ge system has received less attention [14][15][16]. The available reports agree on the second and final phase, NiGe for the Ni/Ge system but there is some disagreement on the first phase.…”

Section: Introductionmentioning

confidence: 99%

Inter-Diffusion of Nickel and Palladium with Germanium

Habanyama¹,

Comrie²

2018

Intermetallic Compounds - Formation and Applications

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Nickel and palladium germanides are the most promising candidates for nano-electronic contact materials to active areas of germanium-based devices. Solid-state reactions were thermally induced in conventional thin film couples of the Ni/Ge and Pd/Ge systems in order to study the sequence of phase formation. By embedding a thin layer of tantalum or tungsten as an inert marker between coupling thin film layers and observing its movement during phase formation, the dominant diffusing species were identified and monitored. In the Ni/Ge system, Ni 5 Ge 3 was the first phase to form followed by NiGe. The results showed that during Ni 5 Ge 3 formation, Ni was the sole diffusing species. During NiGe formation, both Ni and Ge diffused with the Ge diffusion prominent during the early stages, while the later stage of growth was dominated by Ni diffusion. The only phases observed to form in the Pd/Ge system were PdGe and Pd 2 Ge, the latter being the first. Palladium was the dominant diffusing species during both phase formations. Lateral diffusion couples were also prepared by the deposition of thick rectangular islands of germanium on to thin films of nickel and palladium. Several aspects of thermally induced lateral (as opposed to vertical) growth of phases were studied.

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The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C

Cited by 34 publications

References 13 publications

Investigation on Morphology and Thermal Stability of NiGe Utilizing Ammonium Fluoride Pretreatment for Germanium-Based Technology

Investigation on Morphology and Thermal Stability of NiGe Utilizing Ammonium Fluoride Pretreatment for Germanium-Based Technology

Interface Control Processes for Ni/Ge and Pd/Ge Schottky and Ohmic Contact Fabrication: Part Two

Inter-Diffusion of Nickel and Palladium with Germanium

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