The interface inter-diffusion induced enhancement of the charge-trapping capability in HfO2/Al2O3 multilayered memory devices

Lan, Xuexin; Ou, Xiaoxia; Yan, Lei; Gong, Chang‐De; Yin, Qin; Xu, Bin; Xia, Yidong; Yin, Jiang; Liu, Zhiguo

doi:10.1063/1.4829066

Cited by 44 publications

(32 citation statements)

References 27 publications

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“…which show wonderful charge storage and retention properties as compared with those memory devices with single charge-trapping layer. [25][26][27][28][29][30] Some definite experimental evidences identified that the charge-trapping behaviors in these multilayered memory devices should be ascribed to the inter-diffusion at the interface of different high-k oxides. [25][26][27][28] Recently, some high-k composite oxides have been employed as the charge-trapping dielectrics to achieve the higher density of trapped charges in CTM devices.…”

Section: Methodsmentioning

confidence: 99%

“…[25][26][27][28][29][30] Some definite experimental evidences identified that the charge-trapping behaviors in these multilayered memory devices should be ascribed to the inter-diffusion at the interface of different high-k oxides. [25][26][27][28] Recently, some high-k composite oxides have been employed as the charge-trapping dielectrics to achieve the higher density of trapped charges in CTM devices. [31][32][33] It was reported that the memory structure with a charge-trapping layer of (Al 2 O 3 ) 0.5 (Cu 2 O) 0.5 shows a large memory window and a high density of the trapped charges.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The effect of the thickness of tunneling layer on the memory properties of (Cu2O)0.5(Al2O3)0.5 high-k composite charge-trapping memory devices

et al. 2016

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The charge-trapping memory devices namely Pt/Al 2 O 3 /(Al 2 O 3 ) 0.5 (Cu 2 O) 0.5 /SiO 2 /pSi with 2, 3 and 4 nm SiO 2 tunneling layers were fabricated by using RF magnetron sputtering and atomic layer deposition techniques. At an applied voltage of ±11 V, the memory windows in the C-V curves of the memory devices with 2, 3 and 4 nm SiO 2 tunneling layers were about 4.18, 9.91 and 11.33 V, respectively. The anomaly in memory properties among the three memory devices was ascribed to the different back tunneling probabilities of trapped electrons in the charge-trapping dielectric (Al 2 O 3 ) 0.5 (Cu 2 O) 0.5 due to the different thicknesses of SiO 2 tunneling layer.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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The effect of the thickness of tunneling layer on the memory properties of (Cu2O)0.5(Al2O3)0.5 high-k composite charge-trapping memory devices

et al. 2016

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“…21 It was also reported that the multilayered high-k charge-trapping layer, such as HfO 2 /Al 2 O 3 /HfO 2 and ZrO 2 /Al 2 O 3 /ZrO 2 etc., causes an enhancement of the charge-storage efficiency of the CTM devices. [22][23][24][25][26] In our previous study, a remarkable charge-trapping efficiency and a fast programming/erasing(P/E) speed were obtained in a CTM device with a TiAlO high-k composite chargetrapping dielectric, achieving a density of trapped charges of 9.3×10 20 …”

Section: -14mentioning

confidence: 99%

The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices

Lü

Gong

et al. 2014

AIP Advances

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The memory structures Pt/Al2O3/(TiO2)x(Al2O3)1−x/Al2O3/p-Si(nominal composition x = 0.05, 0.50 and 0.70) were fabricated by using rf-magnetron sputtering and atomic layer deposition techniques, in which the dielectric constant and the bottom of the conduction band of the high-k composite (TiO2)x(Al2O3)1−x were adjusted by controlling the partial composition of Al2O3. With the largest dielectric constant and the lowest deviation from the bottom of the conduction band of Si, (TiO2)0.7(Al2O3)0.3 memory devices show the largest memory window of 7.54 V, the fast programming/erasing speed and excellent endurance and retention characteristics, which were ascribed to the special structural design, proper combination of dielectric constant and band alignment in the high-k composite (TiO2)0.7(Al2O3)0.3.

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“…1,[15][16][17][18][19] Thus, the interface HfO 2 /Al 2 O 3 , which plays an important role in charge trapping behavior, is likely to appear in different parts of CTM stacked structures. And the Hf-based high-k dielectrics and its interface have been studied extensively.…”

Section: Introductionmentioning

confidence: 99%

Research on c-HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface in CTM devices based on first principle theory

Dai

Wang

et al. 2017

AIP Advances

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With the growing application of high-k dielectrics, the interface between HfO2 and Al2O3 play a crucial role in CTM devices. To clearly understand the interaction of the HfO-AlO interface at the atomic and electronic scale, the bonding feature, electronic properties and charge localized character of c- HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface has been investigated by first principle calculations. The c- HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface has adhesive energy about -1.754 J/m2, suggesting that this interface can exist stably. Through analysis of Bader charge and charge density difference, the intrinsic interfacial gap states are mainly originated from the OII and OIII types oxygen atoms at the interface, and only OIII type oxygen atoms can localized electrons effectively and are provided with good reliability during P/E cycles, which theoretically validate the experimental results that HfO2/Al2O3 multi-layered charge trapping layer can generate more effective traps in memory device. Furthermore, the influence of interfacial gap states during P/E cycles in the defective interface system have also been studied, and the results imply that defective system displays the degradation on the reliability during P/E cycles, while, the charge localized ability of interfacial states is stronger than intrinsic oxygen vacancy in the trapping layer. Besides, these charge localized characters are further explained by the analysis of the density of states correspondingly. In sum, our results compare well with similar experimental observations in other literatures, and the study of the interfacial gap states in this work would facilitate further development of interface passivation.

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The interface inter-diffusion induced enhancement of the charge-trapping capability in HfO2/Al2O3 multilayered memory devices

Cited by 44 publications

References 27 publications

The effect of the thickness of tunneling layer on the memory properties of (Cu2O)0.5(Al2O3)0.5 high-k composite charge-trapping memory devices

The effect of the thickness of tunneling layer on the memory properties of (Cu2O)0.5(Al2O3)0.5 high-k composite charge-trapping memory devices

The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices

Research on c-HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface in CTM devices based on first principle theory

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