2019
DOI: 10.1016/j.actamat.2019.07.051
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The interaction between vacancies and twin walls, junctions, and kinks, and their mechanical properties in ferroelastic materials

Abstract: Vacancies strongly interact with twin boundaries and often change dramatically the properties of a ferroelastic material. However, the understanding of this behavior at an atomic-level is still deficient. Here we study vacancy diffusion processes across very large length-and time-scales using a combination of molecular dynamics and Monte Carlo simulations. We find that vacancies reduce their energy by residing at twin boundaries, kinks inside domain boundaries, and junctions between domain boundaries. Vacancie… Show more

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Cited by 24 publications
(24 citation statements)
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“…In a similar approach, we expand this idea to the moving kinks in twin walls and needle tips in ferroelastic materials. We argue, using atomistic simulations, that topological nano-structures (stripe twins or needles domains [28][29][30][31][32][33][34][35][36] etc.) can, thus, generate noticeable magnetism.…”
Section: Introductionmentioning
confidence: 98%
“…In a similar approach, we expand this idea to the moving kinks in twin walls and needle tips in ferroelastic materials. We argue, using atomistic simulations, that topological nano-structures (stripe twins or needles domains [28][29][30][31][32][33][34][35][36] etc.) can, thus, generate noticeable magnetism.…”
Section: Introductionmentioning
confidence: 98%
“…Mean-field (MF) theory applied to ferroelectrics predicts the power-law distribution of jerks 29 , which is one of the signatures of scale-free processes, and atomistic simulations show that avalanches are induced by kinks and domain walls junctions [30][31][32] , as well as defects acting as pinning centres 33 . Ultraslow processes have been modelled 34 and reveal that many of the relevant ferroelectric parameters, e.g., the size of the switching events, follow power-law dependences under switching conditions.…”
mentioning
confidence: 99%
“…We know today that a transistor, as an example, does not need bulk materials to operate but is often localized in tiny areas inside twin boundaries or near junctions between boundaries. The same holds for ferroic memories and memristive conductors (Salje et al 2017a;He et al 2019;Bak et al 2020;Lu et al 2020a;Zhang et al 2020;Salje 2021) where only a few atoms near domain boundaries move. The diameters or thicknesses of these functional regions are a few inter-atomic distances (Lu et al 2019(Lu et al , 2020bMcCartan et al 2020).…”
Section: Introductionmentioning
confidence: 84%