The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

A Review of techniques used in Lateral Insulated Gate Bipolar Transistor (LIGBT)

“…The first IGBT was patented as early as 1968 [5]. In 1979 and 1980, there were some more publications [6]- [13] related to the invention of IGBT with different design concepts. Generally, there are few main categories of discrete IGBTs [14], some examples of which are DMOS IGBT [15][16], trench IGBT [17]- [20], soft punch through IGBT [21], injection enhanced insulated gate bipolar transistor [22], [23], carrier stored gate bipolar transistor [24], high-conductivity IGBT [25] and super junction bipolar transistor [26] [27].…”

A Simplified Spice Model for IGBT

“…When the MOSFET's channel turns off, electron current decreases and the IGBT current drops rapidly to the level of the hole recombination current at the inception of the tail. Since the base current of the p-n-p bipolar transistor corresponds to the MOSFET drain current, the current gain of the p-n-p transistor is then, given by [1]:…”

“…The IGBT is an hybrid device that combines the advantages of a MOSFET (high switching speed and low power drive requirement) and of a bipolar junction transistor (BJT) (low conduction losses) [1].…”

3D Parallel Finite Element Simulation of In‐Cell Breakdown in Lateral‐Channel IGBTs

“…Insulated Gate Bipolar Transistors (IGBTs) [1] are among the leading devices in the power semiconductor market, combining a low on-state voltage typical of bipolar devices, with MOS gated switching. Modern IGBTs have a cellular structure such as that shown in Figure 1.…”