The initial stages of the formation of holes and hillocks in thin films under equal biaxial stress

Génin, François Y.

doi:10.1016/0956-7151(95)00132-f

Cited by 35 publications

(11 citation statements)

References 90 publications

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“…28,29 For the case of aluminum, two main growth mechanisms were proposed in literature: intrinsic stress in the film during evaporation 30,31 and formation by postevaporation thermal stress upon annealing. [32][33][34] As the substrates did not suffer elevated temperatures in our experiments, we rule out thermal stress as a possible cause for the observed features.…”

Section: ͑1͒mentioning

confidence: 99%

Reliable electron-only devices and electron transport in n-type polymers

Steyrleuthner

Bange

Neher

2009

Journal of Applied Physics

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Section: ͑1͒mentioning

confidence: 99%

Reliable electron-only devices and electron transport in n-type polymers

Steyrleuthner

Bange

Neher

2009

Journal of Applied Physics

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“…[5][6][7] Srolovitz and Safran 8,9 have performed both the energetic and kinetic analyses on the evolution of an array of cylindrical holes at the grain boundary vertex. Genin et al 10 have analyzed the kinetics of pit development at a grain boundary vertex.…”

Section: ͑2͒mentioning

confidence: 99%

Stability of the grain configurations of thin films—A model for agglomeration

Rha

Park

1997

Journal of Applied Physics

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We have calculated the energy of three distinct grain configurations, namely, completely connected, partially connected, and unconnected configurations, evolving during a spheroidization of polycrystalline thin film by extending a geometrical model due to Miller et al. to the case of spheroidization at both the surface and film-substrate interface. “Stability” diagram defining a stable region of each grain configuration has been established in terms of the ratio of grain size to film thickness versus equilibrium wetting or dihedral angles at various interface energy conditions. The occurrence of spheroidization at the film-substrate interface significantly enlarges the stable region of unconnected grain configuration thereby greatly facilitating the occurrence of agglomeration. Complete separation of grain boundary is increasingly difficult with a reduction of equilibrium wetting angle. The condition for the occurrence of agglomeration differs depending on the equilibrium wetting or dihedral angles. The agglomeration occurs, at low equilibrium angles, via partially connected configuration containing stable holes centered at grain boundary vertices, whereas it occurs directly via completely connected configuration at large equilibrium angles except for the case having small surface and/or film-substrate interface energy. The initiation condition of agglomeration is defined by the equilibrium boundary condition between the partially connected and unconnected configurations for the former case, whereas it can, for the latter case, largely deviate from the equilibrium boundary condition between the completely connected and unconnected configurations because of the presence of a finite energy barrier to overcome to reach the unconnected grain configuration.

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“…One of the drawbacks of the study of Genin and coworkers [1, 6,7] was the absence of long range surface diffusion into the ridge from the surroundings film area. Kim et al [9] indicated the essence of long range diffusion by citing Chaudhari's [10] ridge model in which an analysis of the lattice diffusion (Nabarro -Herring creep) was presented.…”

Section: Introductionmentioning

confidence: 99%

Hillock formation by surface drift-diffusion driven by the gradient of elastic dipole interaction energy under compressive stresses in bi-crystalline thin films

Oǧurtani

Akyıldız

2015

Hittite J Sci Eng

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G rain boundary (GB) thermal grooving is a capillary driven surface morphological evolution, and observed in the vicinity of the grain boundary-free surface junctions in polycrystalline materials at rather elevated temperatures. When the underlying bulk system is exposed to the external and/or internal stress fields the problem becomes much more complicated. One of the most widely employed method to study the effects force fields on the GB grooving, is to couple the capillary-driven surface diffusion with the steady state atomic flux induced by the normal component of the surface

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The initial stages of the formation of holes and hillocks in thin films under equal biaxial stress

Cited by 35 publications

References 90 publications

Reliable electron-only devices and electron transport in n-type polymers

Reliable electron-only devices and electron transport in n-type polymers

Stability of the grain configurations of thin films—A model for agglomeration

Hillock formation by surface drift-diffusion driven by the gradient of elastic dipole interaction energy under compressive stresses in bi-crystalline thin films

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