The influence of V/III ratio on GaN grown on patterned sapphire substrate with low temperature AlN buffer layer by hydride vapor phase epitaxy

Liu, Nanliu; Wang, Qi; Zheng, Xiaoping; Li, Shunfeng; Dikme, Y.; Xiong, Hong; Pang, Yanzhao; Zhang, Guoyi

doi:10.1016/j.jcrysgro.2018.07.014

Cited by 4 publications

(3 citation statements)

References 30 publications

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“…A thin AlN buffer layer (labeled LT-AlN) with a thickness of 30 nm was deposited on the surface of commercial double-polished sapphire substrates at a temperature below 200°C using a mix of physical and chemical vapor deposition system (Liu et al, 2018 ). The LT-AlN can be clearly observed in the SEM image in Figure 1A .…”

Section: Methodsmentioning

confidence: 99%

Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE

et al. 2021

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Free-standing GaN substrates are urgently needed to fabricate high-power GaN-based devices. In this study, 2-inch free-standing GaN substrates with a thickness of ~250 μm were successfully fabricated on double-polished sapphire substrates, by taking advantage of a combined buffer layer using hydride vapor phase epitaxy (HVPE) and the laser lift-off technique. Such combined buffer layer intentionally introduced a thin AlN layer, using a mix of physical and chemical vapor deposition at a relatively low temperature, a 3-dimensional GaN interlayer grown under excess ambient H2, and a coalescent GaN layer. It was found that the cracks in the epitaxial GaN layer could be effectively suppressed due to the large size and orderly orientation of the AlN nucleus caused by pre-annealing treatment. With the addition of a 3D GaN interlayer, the crystal quality of the GaN epitaxial films was further improved. The 250-μm thick GaN film showed an improved crystalline quality. The full width at half-maximums for GaN (002) and GaN (102), respectively dropped from 245 and 412 to 123 and 151 arcsec, relative to those without the 3D GaN interlayer. The underlying mechanisms for the improvement of crystal quality were assessed. This method may provide a practical route for fabricating free-standing GaN substrates at low cost with HVPE.

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Section: Methodsmentioning

confidence: 99%

Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE

et al. 2021

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“…8−10 To address this issue, aluminum nitride (AlN) has been widely used as a buffer layer to enhance the crystalline quality of GaN thin films. 11,12 Additionally, AlN films fabricated via the plasma-enhanced atom layer deposition (PEALD) process were utilized by Zhang et al as a passivation layer on the AlGaN/GaN surface. 13 Therefore, it is crucial to investigate how different AlN buffer layer characteristics affect the formation of GaN thin films to improve the quality of the GaN thin films and increase the efficiency of LEDs made with GaN.…”

Section: Introductionmentioning

confidence: 99%

“…Interest in atomic layer deposition (ALD) technology is increasing due to the focus on microelectronics and deep submicron chip technology, which demand smaller device and material sizes. , The majority of GaN thin films deposited on sapphire or GaN substrates. − Nevertheless, the lattice mismatch exists between sapphire substrate and GaN. − To address this issue, aluminum nitride (AlN) has been widely used as a buffer layer to enhance the crystalline quality of GaN thin films. , Additionally, AlN films fabricated via the plasma-enhanced atom layer deposition (PEALD) process were utilized by Zhang et al as a passivation layer on the AlGaN/GaN surface . Therefore, it is crucial to investigate how different AlN buffer layer characteristics affect the formation of GaN thin films to improve the quality of the GaN thin films and increase the efficiency of LEDs made with GaN.…”

Section: Introductionmentioning

confidence: 99%

Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces

Mao,

Gao,

et al. 2024

Crystal Growth & Design

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Gallium nitride (GaN) is frequently used as the primary material for manufacturing high-brightness light-emitting diodes (LEDs). Recently, atomic layer deposition has become increasingly prevalent across microelectronics, optoelectronics, and nanotechnology as a method for thin-film growth. Gaining insights into the process of thin-film growth can significantly enhance the device performance. Herein, molecular dynamics was used to simulate GaN thin film growth on substrates with different patterned surfaces. Results showed that GaN thin films grown on cone- and dome-patterned substrate surfaces have smoother surfaces than those grown on a flat substrate. Moreover, the GaN thin films grown on flat surfaces exhibited an optimal crystalline quality compared to those grown on patterned substrate surfaces. However, the GaN thin films grown on flat surfaces showed strain levels higher than those grown on patterned substrate surfaces, potentially affecting the performance of the optoelectronic devices. This study reveals the impact of different patterned substrate surfaces on GaN thin films and provides guidance on the design of substrate patterns for different GaN thin film application scenarios.

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Effects of AlN substrate orientation on crystalline quality of wurtzite GaN films investigated via molecular dynamics

Liang

et al. 2022

Computational Materials Science

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The influence of V/III ratio on GaN grown on patterned sapphire substrate with low temperature AlN buffer layer by hydride vapor phase epitaxy

Cited by 4 publications

References 30 publications

Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE

Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE

Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces

Effects of AlN substrate orientation on crystalline quality of wurtzite GaN films investigated via molecular dynamics

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